Support for the EPSRC National Centre for III-V Technologies at Sheffield

支持谢菲尔德 EPSRC 国家 III-V 技术中心

• 批准号: EP/D505712/1
• 负责人: Peter A. Houston
• 金额: $ 587.7万
• 依托单位: University of Sheffield
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2006
• 资助国家: 英国
• 起止时间: 2006 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FD505712%2F1
• 关键词: Support; EPSRC; National; Centre; III

The National Centre provides a wide range of advanced semiconductor materials to UK universities in order to carry out research into devices and physics with applications in telecommunications (including the internet), light emitting diodes, lasers, mobile phones, high frequency radar and ultra high speed optoelectronics and electronics. The structures are produced in the form of a series of thin nanoscale layers, the thickness of which can be controlled to within just a few atoms. Such structures offer new physical effects related to their small dimensions which enable the invention of a wide range of devices such as lasers for optical fibre telecommunications, precise drug delivery and pollution control. Other devices made from these structures can detect a wide range of optical wavelengths for imaging systems and form efficient solar cells.

国家中心向英国大学提供广泛的先进半导体材料，以便开展电信（包括互联网）、发光二极管、激光器、移动电话、高频雷达和超高速应用的器件和物理研究光电子学和电子学。这些结构以一系列纳米级薄层的形式产生，其厚度可以控制在几个原子以内。这种结构提供了与其小尺寸相关的新物理效应，使得能够发明各种设备，例如用于光纤电信、精确药物输送和污染控制的激光器。由这些结构制成的其他设备可以检测成像系统的各种光学波长并形成高效的太阳能电池。

项目成果

Collective fluid dynamics of a polariton condensate in a semiconductor microcavity.

半导体微腔中极化子凝聚体的集体流体动力学。

• DOI: http://dx.10.1038/nature07640
• 发表时间: 2009
• 期刊: Nature
• 影响因子: 64.8
• 作者: Amo A

Electron effective mass and Si-donor binding energy in Ga As 1 - x N x probed by a high magnetic field

高磁场探测 Ga As 1 - x N x 中的电子有效质量和硅施主结合能

• DOI: http://dx.10.1103/physrevb.77.125210
• 发表时间: 2008
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: Allison G

Long lifetimes of quantum-dot intersublevel transitions in the terahertz range.

太赫兹范围内量子点亚能级跃迁的长寿命。

• DOI: 10.1038/nmat2511
• 发表时间: 2009-10-01
• 期刊: Nature materials
• 影响因子: 41.2
• 作者: E. Zibik;E. Zibik;Thomas Grange;Thomas Grange;B. A. Carpenter;N. E. Porter;R. Ferreira;G. Bastard;D. Stehr;S. Winnerl;Manfred Helm;Huiyun Liu;Huiyun Liu;M. S. Skolnick;L. R. Wilson
• 通讯作者: L. R. Wilson

Ultrafast gain dynamics in InP quantum-dot optical amplifiers

InP 量子点光放大器中的超快增益动态

• DOI: http://dx.10.1063/1.3518715
• 发表时间: 2010
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Langbein W

Light Emitting and Laser Diodes in the Ultraviolet

紫外光发射和激光二极管

• DOI: http://dx.10.1109/jstqe.2011.2126563
• 发表时间: 2011
• 期刊: IEEE Journal of Selected Topics in Quantum Electronics
• 影响因子: 4.9
• 作者: Parbrook P