InP / AlGaInP Quantum Dot Lasers for 650-780nm Emission

用于 650-780nm 发射的 InP / AlGaInP 量子点激光器

• 批准号: EP/E05644X/1
• 负责人: Peter A. Houston
• 金额: $ 2.41万
• 依托单位: University of Sheffield
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2007
• 资助国家: 英国
• 起止时间: 2007 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FE05644X%2F1
• 关键词: InP; AlGaInP; Quantum; Dot; Lasers

This project is about the development of a new material with nanoscale features that has properties that go beyond those of existing materials and will enable a number of applications that require light sources with properties that are not currently available. The applications include photodynamic therapy, which is a cancer treatment in which singlet (reactive) oxygen is generated at a specific location by using high power light with a photon energy sufficient to disassociate the oxygen molecule; DVD based optical storage, that requires dual wavelength sources to ensure backwards compatibility in new systems and which is necessary to support the semiconductor wafer manufacturing base within the UK; optical sensing, one form of which requires dual wavelength sources; and fluorescence lifetime studies, that are used, for example, for monitoring biological processes. We aim to demonstrate working devices that utilise this quantum dot material for these specific applications but also to investigate and demonstrate the basic material properties and the basic material and device physics to allow an even broader range of applications in the future. We will employ new strategies to grow material with the particular properties we require, we will characterise this material with a range of advanced experimental techniques, some of which we will develop particularly for this purpose, and will report on the properties of the material and the operation of working devices with new functionality.

该项目旨在开发一种具有纳米级特征的新材料，其性能超越现有材料，并将实现许多需要具有当前不可用性能的光源的应用。这些应用包括光动力疗法，这是一种癌症治疗方法，通过使用高功率光和足以解离氧分子的光子能量，在特定位置产生单线态（活性）氧；基于DVD的光学存储，需要双波长源以确保新系统的向后兼容性，并且对于支持英国境内的半导体晶圆制造基地是必要的；光学传感，其中一种形式需要双波长源；和荧光寿命研究，例如用于监测生物过程。我们的目标是展示将这种量子点材料用于这些特定应用的工作设备，同时研究和演示基本材料特性以及基本材料和设备物理原理，以便在未来实现更广泛的应用。我们将采用新的策略来生长具有我们所需的特定性能的材料，我们将使用一系列先进的实验技术来表征这种材料，其中我们将专门为此目的开发一些技术，并将报告材料的性能和具有新功能的工作设备的操作。

项目成果

Effect of temperature on threshold current density in InP/AlGaInP quantum dot laser structures

温度对 InP/AlGaInP 量子点激光器结构中阈值电流密度的影响

• DOI: http://dx.10.1504/ijnbm.2009.027708
• 发表时间: 2009
• 期刊: International Journal of Nano and Biomaterials
• 作者: Ghamdi M

InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716 - 755 nm.

InP/AlGaInP 量子点半导体盘激光器，用于 716 - 755 nm 的 CW TEM00 发射。

• DOI: http://dx.10.1364/oe.17.021782
• 发表时间: 2009
• 期刊: Optics express
• 影响因子: 3.8
• 作者: Schlosser PJ

Effect of Growth Temperature on InP QD Lasers

生长温度对 InP QD 激光器的影响

• DOI: http://dx.10.1109/lpt.2009.2036245
• 发表时间: 2010
• 期刊: IEEE Photonics Technology Letters
• 影响因子: 2.6
• 作者: Smowton P

Passive Mode-Locking of a Ti : Sapphire Laser by InGaP Quantum-Dot Saturable Absorber

InGaP 量子点可饱和吸收体对钛宝石激光器进行被动锁模

• DOI: http://dx.10.1109/lpt.2009.2037599
• 发表时间: 2010
• 期刊: IEEE Photonics Technology Letters
• 影响因子: 2.6
• 作者: Savitski V