SPHERICALLY BENT SI ANALYSER CRYSTALS FOR RIXS WITH INTRENSIC RESOL OF 150 MEV

用于 RIXS 的球面弯曲 SI 分析仪晶体，本征解析度为 150 MEV

• 批准号: 7369172
• 负责人: Stephen P. Cramer
• 金额: $ 2.36万
• 依托单位: ILLINOIS INSTITUTE OF TECHNOLOGY
• 依托单位国家: 美国
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-04-01 至 2007-03-31
• 项目状态: 已结题
• 来源: https://reporter.nih.gov/project-details/7369172
• 关键词: SPHERICALLY; BENT; SI; ANALYSER; CRYSTALS

This subproject is one of many research subprojects utilizing the resources provided by a Center grant funded by NIH/NCRR. The subproject and investigator (PI) may have received primary funding from another NIH source, and thus could be represented in other CRISP entries. The institution listed is for the Center, which is not necessarily the institution for the investigator. High-resolution RIXS is a highly promising technique for investigation of 3d and 4d transition metals in materials science and biology. RIXS at the 1s resonances with lowest incident energies (K pre-edges) is a very recent, exciting technique. We have constructed installed at BioCAT a high resolution spherical analyzer for emitted x-rays which uses a variety of Si and Ge crystals at 0.8 - 1.0 m Roland circle radius. A typical intrinsic energy resolution of this analyzer is about 1 eV (FWHM) and this limits overall experimental resolution. Improvement of this resolution to the order of ~200-300 meV should substantially increase the information content of the spectra. We will use beamtime to enhance resolution by adapting our instrument to accommodate crystals with a 2 m circular radius and to investigate the geometric limitations of our apparatus. By perfecting each aspect of the fabrication and by using the "anodic bonding" technique to bind the Si wafer to a spherical glass substrate, silicon bent analysers can provide the required resolution and such analysers have been successfuly produced by our collaborators for several K edges of 3d transition metals, enormously improving the potential energy resolution compared to the standard spherically bent analysers. Hence, we intend to use for the first time in our existing setup at BioCAT Si (551) spherically bent at 2 m. These enable analysis of photons with scattered energy roughly ranging from 8200 eV to 8500 eV - around Ni K-edge at 8333 eV - and with an overall resolution energy of 400-450 meV (FWHM) in experimental conditions.

该子项目是利用 NIH/NCRR 资助的中心拨款提供的资源的众多研究子项目之一。子项目和研究者 (PI) 可能已从另一个 NIH 来源获得主要资金，因此可以在其他 CRISP 条目中出现。列出的机构是中心的机构，不一定是研究者的机构。高分辨率 RIXS 是一种非常有前途的技术，用于研究材料科学和生物学中的 3d 和 4d 过渡金属。具有最低入射能量（K 前边缘）的 1s 共振 RIXS 是一项非常新的、令人兴奋的技术。 我们在 BioCAT 建造了一台用于发射 X 射线的高分辨率球形分析仪，该分析仪使用各种 Si 和 Ge 晶体，罗兰圆半径为 0.8 - 1.0 m。该分析仪的典型固有能量分辨率约为 1 eV (FWHM)，这限制了总体实验分辨率。将该分辨率提高到约 200-300 meV 的数量级应该会大大增加光谱的信息内容。我们将利用波束时间来调整我们的仪器以适应 2 m 圆形半径的晶体，从而提高分辨率，并研究我们设备的几何限制。 通过完善制造的各个方面，并使用“阳极键合”技术将硅晶片粘合到球形玻璃基板上，硅弯曲分析仪可以提供所需的分辨率，并且我们的合作者已成功生产了用于多个 K 边缘的分析仪。 3d 过渡金属，与标准球形弯曲分析仪相比，极大地提高了势能分辨率。因此，我们打算首次在 BioCAT Si (551) 的现有装置中使用 2 m 的球形弯曲。这些可以分析散射能量大致范围为 8200 eV 至 8500 eV（围绕 8333 eV 的 Ni K 边缘）的光子，并且在实验条件下总体分辨率能量为 400-450 meV (FWHM)。