MSc Compound Semiconductor Electronics (PhD Progression 1+3)

化合物半导体电子学理学硕士（博士升读 1 3）

• 批准号: 2888740
• 金额: --
• 依托单位: CARDIFF UNIVERSITY
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2023
• 资助国家: 英国
• 起止时间: 2023 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2888740
• 关键词: MSc; Compound; Semiconductor; Electronics; PhD

The team in Cardiff successful grows epitaxial gallium nitride (GaN) layers on (111) silicon (Si) substrates. This may be one solution to enable integration of light emitting diodes (LEDs) for photonics onto standard Si process technology production lines. Key issues are wafer cracking due to -17% tensile strain of the GaN and the generation of dense misfit dislocation networks due to the misfit and the thermal expansion mismatch between GaN and Si and also the formation of good ohmic electrical contacts for device operation. Various methods to explore and reduce lattice strain will be investigated in this combined electron microscopy and electron spectroscopy study where one key question to answer is whether and to what degree the anneal of the electrical contacts enhances strain relaxation in the GaN layers underneath.Conventional electron diffraction contrast (EDC), high-resolution lattice imaging (HREM), and annular dark-field (ADF) scanning transmission electron microscopy (STEM) will be used in project A to image dislocation lines and measure their density in plan-view (top-down) geometry, and to determine the dislocation types and image their cores in cross-sectional geometry.

加的夫成功的团队在（111）硅（SI）底物上种植了氮化甲酯（GAN）层。这可能是使光子学发射二极管（LED）集成到标准SI工艺技术生产线上的一种解决方案。关键问题是由于GAN的-17％拉伸应变以及由于GAN和SI之间的不匹配和热膨胀不匹配而产生的密集不合适网络引起的晶圆破裂，并形成了用于设备操作的良好欧姆电气接触。 Various methods to explore and reduce lattice strain will be investigated in this combined electron microscopy and electron spectroscopy study where one key question to answer is whether and to what degree the anneal of the electrical contacts enhances strain relaxation in the GaN layers underneath.Conventional electron diffraction contrast (EDC), high-resolution lattice imaging (HREM), and annular dark-field (ADF) scanning transmission electron显微镜（STEM）将在项目A中使用，以形象位错线并测量其在平面视图（自上而下）几何形状中的密度，并确定位错类型和在横截面几何形状中的核心。