Silicon Carbide Trench Refill Epitaxy for Super-Junction High Voltage Power Devices

用于超结高压功率器件的碳化硅沟槽再填充外延

• 批准号: 2678908
• 金额: --
• 依托单位: University of Warwick
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2022
• 资助国家: 英国
• 起止时间: 2022 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2678908
• 关键词: Silicon; Carbide; Trench; Refill; Epitaxy

Microelectronic device technology - Physical SciencesThe project aims to investigate Silicon Carbide (SiC) superjunction materials and devices for exploitation in 10-15 years as high voltage direct current (HVDC) national grid transmission. It will consist of 1) device modelling using computer simulation, 2) materials fabrication and 3) device construction, all using facilities at Warwick. The particular method to construct SiC superjunction devices will be trench refill epitaxy. Vertical devices made by trench refilling will be subject to doping imbalances caused by local region asymmetry, process misalignments or other deviations from design. Simulation by TCAD software (Centaurus) will be performed to determine how this doping imbalance will affect the RON vs VBR characteristics between non-SJ and SJ devices. Materials fabrication will focus on trench selectivity, precise dopant control, surface planarization, achieving wide process windows and fast growth rates. Challenges in device construction will be incorporating all the knowledge and caveats from previous activities into a standard construction process. This will result in new technologies, which could be included in many power electronics areas. Efficiency, reliability and cost of production will be compared for overall optimization.

微电子设备技术 - 物理科学家项目旨在调查10 - 15年以来，作为高压直流电流（HVDC）国家电网传输，在10 - 15年内进行剥削的硅（SIC）超结材料和设备。它将包括1）使用计算机模拟的设备建模，2）材料制造和3）设备构建，所有设备都在沃里克（Warwick）使用设施。构建SIC超口连接设备的特定方法将是沟渠的再搭配。通过沟槽重新填充制造的垂直设备将受到由局部区域不对称，过程错位或其他设计偏差引起的兴奋剂失衡。将执行TCAD软件（Centaurus）的仿真，以确定这种兴奋剂不平衡将如何影响非SJ和SJ设备之间的RON与VS VBR特性。材料制造将集中于沟槽的选择性，精确的掺杂剂控制，表面平面化，实现宽阔的过程窗口和快速增长速度。设备构建中的挑战将把以前活动的所有知识和警告纳入标准的施工过程中。这将导致新技术，这些技术可以包含在许多电力电子领域。将比较效率，可靠性和生产成本以进行整体优化。