Silicon Carbide Trench Refill Epitaxy for Super-Junction High Voltage Power Devices

用于超结高压功率器件的碳化硅沟槽再填充外延

• 批准号: 2678908
• 金额: --
• 依托单位: University of Warwick
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2022
• 资助国家: 英国
• 起止时间: 2022 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2678908
• 关键词: Silicon; Carbide; Trench; Refill; Epitaxy

Microelectronic device technology - Physical SciencesThe project aims to investigate Silicon Carbide (SiC) superjunction materials and devices for exploitation in 10-15 years as high voltage direct current (HVDC) national grid transmission. It will consist of 1) device modelling using computer simulation, 2) materials fabrication and 3) device construction, all using facilities at Warwick. The particular method to construct SiC superjunction devices will be trench refill epitaxy. Vertical devices made by trench refilling will be subject to doping imbalances caused by local region asymmetry, process misalignments or other deviations from design. Simulation by TCAD software (Centaurus) will be performed to determine how this doping imbalance will affect the RON vs VBR characteristics between non-SJ and SJ devices. Materials fabrication will focus on trench selectivity, precise dopant control, surface planarization, achieving wide process windows and fast growth rates. Challenges in device construction will be incorporating all the knowledge and caveats from previous activities into a standard construction process. This will result in new technologies, which could be included in many power electronics areas. Efficiency, reliability and cost of production will be compared for overall optimization.

微电子器件技术-物理科学该项目旨在研究碳化硅（SiC）超结材料和器件，以在10-15年内开发用于高压直流（HVDC）国家电网传输。它将包括 1) 使用计算机模拟的设备建模、2) 材料制造和 3) 设备构建，所有这些都使用沃里克的设施。构建SiC超结器件的具体方法是沟槽再填充外延。通过沟槽再填充制造的垂直器件将受到由于局部区域不对称、工艺未对准或其他设计偏差引起的掺杂不平衡的影响。将通过 TCAD 软件 (Centaurus) 进行仿真，以确定这种掺杂不平衡将如何影响非 SJ 和 SJ 器件之间的 RON 与 VBR 特性。材料制造将侧重于沟槽选择性、精确的掺杂剂控制、表面平坦化、实现宽工艺窗口和快速生长速率。设备构建的挑战是将之前活动中的所有知识和注意事项整合到标准构建过程中。这将产生新技术，这些新技术可能会被纳入许多电力电子领域。将比较效率、可靠性和生产成本以进行整体优化。