SBIR Phase I: Silicon Carbide Radio Frequency Switches

SBIR 第一阶段：碳化硅射频开关

• 批准号: 2334387
• 负责人: Albert Kumar
• 金额: $ 27.5万
• 依托单位: CARBIDE RADIO INC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2023
• 资助国家: 美国
• 起止时间: 2023-12-01 至 2024-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2334387&HistoricalAwards=false
• 关键词: SBIR; Phase; Silicon; Carbide; Radio

This Small Business Innovation Research (SBIR) Phase I project focuses on wireless communication technolog, specifically the development of a special semiconductor known as silicon carbide (SiC), which has the potential to revolutionize the industry. Unlike traditional semiconductors, SiC can operate at much higher power levels and in harsh environments, making it ideal for wireless communication devices. Currently, the industry predominantly relies on gallium nitride (GaN) semiconductors, which are not only rare but also mostly imported, raising national security concerns. By demonstrating that SiC can match or even surpass the performance of GaN in radio frequency (RF) applications, this project aims to pave the way for a robust SiC RF semiconductor industry within the United States (U.S.). The RF switch market alone is estimated to be worth $2 billion by 2024. A successful SiC RF switch product would not only capture a significant share of this market but also establish the U.S, as a leader in RF semiconductor technology. The project has the potential to create jobs, foster innovation within the domestic semiconductor industry, and enhance national security by reducing reliance on foreign-produced semiconductor materials. This Small Business Innovation Research (SBIR) Phase I project will produce commercially competitive RF switches made from SiC. The RF switches are intended for use in sub-6 GHz cellular infrastructure applications, such as base stations, where high power and ruggedness are difficult to achieve in conventional silicon-based technologies. SiC and, more specifically, SiC metal-oxide-semiconductor field-effect transistors (MOSFETs), have gained significant market share in the electric vehicle industry. In contrast, SiC MOSFETs are essentially non-existent in the RF industry. The main reasons are poor mobility, resulting in high on-state resistance, and high off-state capacitance. For an RF switch, the product on-state resistance and off-state capacitance are critical specifications, with lower numbers being better. This project develops two semiconductor innovations to reduce these factors while handling high power levels. Research focuses on developing the semiconductor fabrication processes to produce an RF switch integrated circuit product that is competitive with existing high power RF switches, such as those made from GaN having insertion losses less than 0.8 dB up to 6 GHz, isolation of around 20 dB, and handling high peak RF power levels of 50 dBm/100 W.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

这项小型企业创新研究（SBIR）I阶段项目的重点是无线通信技术，特别是开发了一种特殊的半导体，即硅碳化物（SIC），该技术有可能彻底改变该行业。与传统的半导体不同，SIC可以在更高的功率水平和恶劣的环境中运行，这是无线通信设备的理想选择。目前，该行业主要依赖于氮化碳（GAN）半导体，这不仅罕见，而且大部分是进口的，这引起了国家安全的关注。 通过证明SIC可以在射频（RF）应用中匹配甚至超过GAN的性能，该项目旨在为美国（美国）境内的强大SIC RF半导体行业铺平道路。到2024年，仅RF开关市场的价值估计价值20亿美元。成功的SIC RF Switch产品不仅可以占据这一市场的很大份额，而且还将建立美国，作为RF半导体技术的领导者。 该项目有可能创造就业机会，促进国内半导体行业的创新，并通过减少对外国生产的半导体材料的依赖来增强国家安全。这项小型企业创新研究（SBIR）I阶段项目将产生由SIC制成的商业竞争性RF开关。 RF开关旨在用于亚基6 GHz细胞基础设施应用中，例如基站，在基于常规的硅技术中，难以实现高功率和坚固性。 SIC，更具体地说，是SIC金属氧化物 - 氧化型野外晶体管（MOSFET），在电动汽车行业中占有很大的市场份额。相比之下，SIC MOSFET在RF行业本质上是不存在的。主要原因是机动性差，导致州立州的耐药性较高和高州电容。对于RF开关，在州的阻力和州外电容是关键规格，较低的数字更好。该项目开发了两项半导体创新，以减少这些因素，同时处理高功率水平。研究重点是开发半导体制造过程，以生产RF开关的集成电路产品，该电路与现有的高功率RF开关具有竞争力，例如由GAN制造的插入损失小于0.8 dB至6 GHz的GAN制造的，隔离约为20 dB，大约20 dB，并通过使用NES FAR的50 dbm/sath apte and Nevional的高峰值电源水平来处理NSF的高峰值功率，并获得了nsf的评估。基金会的智力优点和更广泛的影响评论标准。