Exploitation of High Voltage CMOS sensors for tracking applications in physics experiments and beyond

利用高压 CMOS 传感器跟踪物理实验及其他领域的应用

• 批准号: MR/X023834/1
• 负责人: Eva Vilella Figueras
• 金额: $ 74.75万
• 依托单位: University of Liverpool
• 依托单位国家: 英国
• 项目类别: Fellowship
• 财政年份: 2024
• 资助国家: 英国
• 起止时间: 2024 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=MR%2FX023834%2F1
• 关键词: Exploitation; Voltage; CMOS; sensors; tracking

Silicon tracking detectors sit at the core of many particle and nuclear physics experiments to measure the trajectory of charged particles produced in collisions or decay processes. The specifications for these detectors are many and often extremely challenging, as they need to track with the highest possible accuracy the many billions of charged particles that are produced every second in an experiment. The state-of-the-art in silicon tracking detectors for the current generation of physics experiments consists of hybrid sensors in planar processes (combined with a separate readout chip) and monolithic sensors in industry-standard CMOS processes. While both approaches are successfully deployed in current experiments, such as the ATLAS and ALICE experiments at the Large Hadron Collider (LHC) at CERN, they are not able to meet all the requirements of future experiments in a single device. Monolithic silicon sensors in industry-standard High Voltage CMOS (HV-CMOS) processes, a variant of CMOS, are the strongest candidate to meet all the specifications for the next generation of physics experiments. HV-CMOS sensors integrate the sensing cell (i.e. the pixel) and the readout chip in a single device (i.e. a sensor chip) that can be as thin as 50 micrometers. HV-CMOS sensors provide good spatial resolution, fast time resolution, excellent radiation tolerance, all at very competitive cost per area. They were first proposed in 2007 and have matured significantly since then. Upcoming experiments that have selected or propose HV-CMOS for their silicon tracking detector, such as the Mu3e experiment at PSI in Switzerland and the Mighty Tracker upgrade for the LHCb experiment at CERN, will showcase its use for large tracking systems for the future.In this research, I propose to deploy the highly-performant HV-CMOS sensor chips I have developed already in the first phase of my research programme in two physics experiments that will lead to the discovery of exciting new physics. I will target the proton Electric Dipole Moment (pEDM) search proposed by the JEDI collaboration at the COSY synchrotron in Germany initially, followed by the LHCb VELO detector upgrade at the High Luminosity LHC at CERN. Using my highly-performant HV-CMOS sensor chips, I will assemble technology demonstrators and evaluate them in the Liverpool clean rooms and international facilities to demonstrate they meet the specifications required by these experiments. I will seek the commercialisation of my highly radiation tolerant UKRI-MPW sensor technology for commercial applications beyond physics. To benefit the wider society, I will target applications in particle beam therapy, electron microscopy, nuclear facility monitoring and space. I will also deliver large area highly-performant HV-CMOS sensors that will incorporate all the lessons learned during the first phase of my research programme.

硅跟踪探测器是许多粒子和核物理实验的核心，用于测量碰撞或衰变过程中产生的带电粒子的轨迹。这些探测器的规格很多，而且通常极具挑战性，因为它们需要以尽可能高的精度跟踪实验中每秒产生的数十亿个带电粒子。用于当前一代物理实验的最先进的硅跟踪探测器由平面工艺中的混合传感器（与单独的读出芯片相结合）和行业标准 CMOS 工艺中的单片传感器组成。虽然这两种方法都在当前的实验中成功部署，例如欧洲核子研究中心大型强子对撞机 (LHC) 的 ATLAS 和 ALICE 实验，但它们无法在单个设备中满足未来实验的所有要求。采用行业标准高压 CMOS (HV-CMOS) 工艺（CMOS 的一种变体）的单片硅传感器是满足下一代物理实验所有规范的最强候选者。 HV-CMOS 传感器将传感单元（即像素）和读出芯片集成在单个器件（即传感器芯片）中，厚度可薄至 50 微米。 HV-CMOS 传感器提供良好的空间分辨率、快速的时间分辨率、出色的耐辐射能力，并且单位面积成本极具竞争力。它们于 2007 年首次提出，此后已经显着成熟。即将选择或提议将 HV-CMOS 用于硅跟踪探测器的实验，例如瑞士 PSI 的 Mu3e 实验和 CERN LHCb 实验的 Mighty Tracker 升级，将展示其在未来大型跟踪系统中的用途。在这项研究中，我建议将我在研究项目第一阶段开发的高性能 HV-CMOS 传感器芯片部署到两个物理实验中，这将导致令人兴奋的新物理的发现。我将首先针对德国 COSY 同步加速器的 JEDI 合作提出的质子电偶极矩 (pEDM) 搜索，然后在欧洲核子研究中心 (CERN) 高亮度大型强子对撞机 (LHC) 上升级 LHCb VELO 探测器。使用我的高性能 HV-CMOS 传感器芯片，我将组装技术演示器并在利物浦洁净室和国际设施中对其进行评估，以证明它们满足这些实验所需的规格。我将寻求将我的高耐辐射 UKRI-MPW 传感器技术商业化，用于物理以外的商业应用。为了造福更广泛的社会，我将瞄准粒子束治疗、电子显微镜、核设施监测和太空方面的应用。我还将提供大面积高性能 HV-CMOS 传感器，该传感器将融合我的研究计划第一阶段中学到的所有经验教训。