Many Body Localisation in the Solid State for Finite Temperature Quantum Computing

用于有限温度量子计算的固态多体定位

基本信息

批准号：
EP/V047000/1
负责人：
Abbie Mclaughlin
金额：
$ 15.79万
依托单位：
University of Aberdeen
依托单位国家：
英国
项目类别：
Research Grant
财政年份：
2021
资助国家：
英国
起止时间：
2021 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=EP%2FV047000%2F1
关键词：
Many Body Localisation Solid State

项目摘要

This proposal builds on the exciting discovery of an exotic insulator-insulator transition in the oxyarsenide CeMnAsO1-xFx (x = 0.035 - 0.075). Such temperature driven metal-insulator and insulator-insulator transitions, in which the resistivity changes by orders of magnitude over a very narrow temperature range, have attracted considerable interest from both theoretical and experimental researchers and have novel applications such as Resistance Random Access Memory (RRAM). The origin of the insulator-insulator transition in CeMnAsO1-xFx is not yet established but preliminary results suggest that this transition could be the first observation of many body localisation (MBL) in the solid state. The most significant characteristic of MBL systems is that below a transition temperature (TMBL) they become perfect insulators, exhibiting zero electronic conductivity. The MBL phase also acts as a quantum memory. Moreover, the localisation of MBL systems can be used to protect quantum memory allowing the tantalising possibility of performing topological quantum computation at finite temperatures. We will perform the vital measurements to confirm the MBL phase. If verified, we will be the first group in the world to report MBL in the solid state. The discovery of a material exhibiting MBL in the bulk would be transformative, as the MBL phase has the potential to revolutionise technological applications involving quantum sensors and computing, offering non-classical system performance. It would also create a new experimental research field that will allow the realisation of fundamentally new forms of quantum matter through non-equilibrium transitions.

该提议建立在氧化剂Cemnaso1-XFX中的异国绝缘体 - 绝缘体 - 绝缘体过渡（x = 0.035-0.075）中的令人兴奋的基础上。这种温度驱动的金属 - 绝缘体和绝缘体 - 绝缘体过渡，其中电阻率在非常狭窄的温度范围内随数量级而变化，引起了理论和实验研究人员的极大兴趣，并且具有新颖的应用，例如阻力随机访问记忆（RRAM））。尚未确定绝缘子 - XFX中绝缘子 - 绝缘体的过渡，但初步结果表明，这种过渡可能是对固态中许多身体定位（MBL）的首次观察。 MBL系统最重要的特征是，低于过渡温度（TMBL），它们成为完美的绝缘子，表现为零电子电导率。 MBL相也充当量子内存。此外，可以使用MBL系统的定位来保护量子记忆，从而使在有限温度下执行拓扑量子计算的可能性。我们将执行重要的测量以确认MBL相。如果经过验证，我们将是世界上第一个在固态报告MBL的组。由于MBL相具有革命性的涉及量子传感器和计算的技术应用，从而提供了非古典系统性能，因此发现大量MBL的材料将具有变革性。它还将创建一个新的实验研究领域，该领域将通过非平衡过渡实现从根本上实现新形式的量子物质。