Realising a solid state photomultiplier and infrared detectors through Bismide containing semiconductors

通过含铋半导体实现固态光电倍增管和红外探测器

• 批准号: EP/N021037/1
• 负责人: Stephen Sweeney
• 金额: $ 43.94万
• 依托单位: University of Surrey
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2016
• 资助国家: 英国
• 起止时间: 2016 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FN021037%2F1
• 关键词: Realising; solid; state; photomultiplier; infrared

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目前，GtR 中尚未提供所有资助研究的摘要。这通常是因为在提交提案时不需要摘要，但可能是因为它包含个人详细信息等敏感信息。

项目成果

Giant Bowing of the Bandgap and Spin-Orbit Splitting in GaP 1-x Bi x Dilute Bismide Alloys

GaP 1-x Bi x 稀铋合金中带隙的巨大弯曲和自旋轨道分裂

• DOI: 10.1109/icton51198.2020.9203283
• 发表时间: 2020
• 作者: Bushell Z

Giant bowing of the band gap and spin-orbit splitting energy in GaP1-xBix dilute bismide alloys

• DOI: 10.1038/s41598-019-43142-5
• 发表时间: 2019-05-02
• 期刊: SCIENTIFIC REPORTS
• 影响因子: 4.6
• 作者: Bushell, Zoe L.;Broderick, Christopher A.;Sweeney, Stephen J.
• 通讯作者: Sweeney, Stephen J.

Dilute bismide alloys grown on GaAs and InP substrates for improved near- and mid-infrared semiconductor lasers

在 GaAs 和 InP 基底上生长的稀双胺合金可改善近红外和中红外半导体激光器

• DOI: 10.1109/icton.2016.7550303
• 发表时间: 2016
• 作者: Broderick C

Optical functions and critical points of dilute bismide alloys studied by spectroscopic ellipsometry

椭圆偏振光谱研究稀双胺合金的光学性能和临界点

• DOI: 10.1063/1.5006974
• 发表时间: 2018
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Bushell Z

GaAs-based dilute bismide semiconductor lasers: Theory vs. experiment

GaAs 基稀双胺半导体激光器：理论与实验

• DOI: 10.1109/nusod.2016.7546999
• 发表时间: 2016
• 作者: Broderick C