Efficient Photonic Devices for Near- and Mid-Infrared Applications

用于近红外和中红外应用的高效光子器件

基本信息

  • 批准号:
    EP/H005587/1
  • 负责人:
  • 金额:
    $ 127.84万
  • 依托单位:
  • 依托单位国家:
    英国
  • 项目类别:
    Fellowship
  • 财政年份:
    2010
  • 资助国家:
    英国
  • 起止时间:
    2010 至 无数据
  • 项目状态:
    已结题

项目摘要

This project aims to address many issues of growing importance in today's world. We are all becoming increasingly technology-dependent, whether for entertainment, critical areas, e.g. healthcare and perhaps most notably for communication. All of these technologies require energy and as our appetite for higher performance, faster and better technology increases, the demand on natural resources increases correspondingly. Photonics (the use and manipulation of light) is perhaps one of the most widely used technologies, whether it be for sending information at high speeds across the internet, for reading/writing data onto DVDs, laser surgery and so on. Photonic components (lasers, light emitting diodes etc.) are the fundamental building blocks of this technology and are produced in their billions annually (with revenues in the multi $1Bs). In spite of the widespread use of these devices, their efficiency is often relatively low, and compounded by a strong temperature sensitivity, particularly for devices operating in the near- and mid-infrared regions of the electromagnetic spectrum. This has largely held back the widespread deployment of mid-infrared lasers, for example in environmental and medical sensing (many gases are absorbed at these wavelengths) and other forms of free-space optical communication. In the near-infrared, telecommunications lasers operating in the optical fibre optimum transmission window at 1.55um are both inefficient and temperature sensitive. As a result, these devices require additional control electronics which consume significantly more power than the lasers themselves! Typically, more than 90% of the energy is such a system is wasted as heat.This proposal aims to tackle these issues in a coordinated manner since the core issues influencing near- and mid-infrared emitters is the same. The approach of this project is two-fold: (a) to work to develop a better understanding of the physical processes which give rise to poor efficiencies and to work in collaboration with other leading international groups towards developing new semiconductor materials systems which the PI has predicted will strongly suppress such processes (e.g. narrow band gap quantum dot systems and relatively unexplored semiconductor alloys, such as (In)GaAsBi) and (b) to develop novel materials such as dilute nitride phosphides to embed photonic components directly in electronic circuits, which are primarily silicon based. Routing data optically in such circuits could significantly reduce power (heat) dissipation in computers. Together, these approaches offer the potential to provide both large energy savings due to the use of better materials, and cost savings in manufacture, due to integration.The materials and devices in this project will be obtained from leading semiconductor growth groups in North America, Europe and Asia. At Surrey, the PI has established unique experimental techniques (e.g. low temperature and high pressure systems) to probe the physical properties of photonic materials and devices and will use these to determine both the basic materials parameters and the influence these have on device performance. The fellowship will allow the PI an excellent opportunity to lead a significant effort working together with a strong international team to investigate the fundamental physical characteristics of new materials with the aim of developing high efficiency improved photonic technology for widespread applications of importance to UK industry.
该项目旨在解决当今世界越来越重要的许多问题。无论是在娱乐,关键领域,例如医疗保健,也许最著名的是沟通。所有这些技术都需要能源,并且随着我们对更高性能的需求,更快,更好的技术增加,对自然资源的需求相应地增加。光子学(使用和操纵光)可能是使用最广泛的技术之一,无论是用于在互联网上高速发送信息,用于将数据读/写入DVD,激光手术等。光子组件(激光,发射二极管等)是该技术的基本构建基块,每年都在数十亿美元中生产(Multi $ 1B中的收入)。尽管这些设备广泛使用,但它们的效率通常相对较低,并且具有强烈的温度灵敏度,尤其是对于在电磁频谱的近红外和中红外区域运行的设备。这在很大程度上阻止了中红外激光器的广泛部署,例如在环境和医学传感方面(许多气体在这些波长下吸收了许多气体)和其他形式的自由空间光学通信。在近红外,在1.55UM处于光纤最佳传输窗口中运行的电信激光器既低效率又敏感。结果,这些设备需要额外的控制电子设备,这些电子设备比激光器本身消耗的功率要多得多!通常,超过90%的能源是这样的系统被浪费了,因此该提案旨在以协调的方式解决这些问题,因为影响近红外发射器的核心问题是相同的。该项目的方法是两个方面:(a)为了更好地理解物理过程,这些过程会导致效率不佳,并与其他领先的国际团体合作开发开发新的半导体材料系统,PI预测这些系统将强烈抑制此类过程,例如,狭窄的频段量子点系统和相对漏洞的范围(例如,范围较窄的量子)(例如,范围内的范围)(例如)(例如)(例如)(例如)(例如)(例如)(例如)(例如)(例如)(例如)(例如)(例如),例如)例如稀释的氮磷化物直接在电子电路中嵌入光子成分,这些电路主要基于硅。在此类电路中,将数据的路由数据可显着降低计算机中的功率(热)耗散。由于使用更好的材料和制造成本节省,这些方法共同提供了提供大量节能的潜力。该项目中的材料和设备将从北美,欧洲和亚洲领先的半导体增长群体中获得。在萨里,PI建立了独特的实验技术(例如低温和高压系统),以探测光子材料和设备的物理特性,并将使用它们来确定基本材料参数以及这些对设备性能的影响。该奖学金将使PI成为一个绝佳的机会,可以与一个强大的国际团队一起进行大量努力,以调查新材料的基本物理特征,以开发高效的光子技术,以扩大对英国行业重要性的广泛应用。

项目成果

期刊论文数量(10)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Giant bowing of the band gap and spin-orbit splitting energy in GaP1-xBix dilute bismide alloys
  • DOI:
    10.1038/s41598-019-43142-5
  • 发表时间:
    2019-05-02
  • 期刊:
  • 影响因子:
    4.6
  • 作者:
    Bushell, Zoe L.;Broderick, Christopher A.;Sweeney, Stephen J.
  • 通讯作者:
    Sweeney, Stephen J.
Effect of bismuth incorporation on recombination mechanisms in GaAsBi/GaAs heterostructures
铋掺入对 GaAsBi/GaAs 异质结构复合机制的影响
  • DOI:
    10.1007/s10854-023-09839-0
  • 发表时间:
    2023
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Batool Z
  • 通讯作者:
    Batool Z
Semiconductor Quantum Well Lasers With a Temperature-Insensitive Threshold Current
具有温度不敏感阈值电流的半导体量子阱激光器
Relationship between Human Pupillary Light Reflex and Circadian System Status.
  • DOI:
    10.1371/journal.pone.0162476
  • 发表时间:
    2016
  • 期刊:
  • 影响因子:
    3.7
  • 作者:
    Bonmati-Carrion MA;Hild K;Isherwood C;Sweeney SJ;Revell VL;Skene DJ;Rol MA;Madrid JA
  • 通讯作者:
    Madrid JA
The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing
  • DOI:
    10.1063/1.4728028
  • 发表时间:
    2012-06-01
  • 期刊:
  • 影响因子:
    3.2
  • 作者:
    Batool, Z.;Hild, K.;Sweeney, S. J.
  • 通讯作者:
    Sweeney, S. J.
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Stephen Sweeney其他文献

Stephen Sweeney的其他文献

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{{ truncateString('Stephen Sweeney', 18)}}的其他基金

Strained germanium photonic crystal membranes for scalable and efficient silicon-based photonic devices
用于可扩展且高效的硅基光子器件的应变锗光子晶体膜
  • 批准号:
    EP/V048732/1
  • 财政年份:
    2021
  • 资助金额:
    $ 127.84万
  • 项目类别:
    Research Grant
Realising a solid state photomultiplier and infrared detectors through Bismide containing semiconductors
通过含铋半导体实现固态光电倍增管和红外探测器
  • 批准号:
    EP/N021037/1
  • 财政年份:
    2016
  • 资助金额:
    $ 127.84万
  • 项目类别:
    Research Grant
Exploring Short Wavelength Limits for High Performance Quantum Cascade Lasers
探索高性能量子级联激光器的短波长限制
  • 批准号:
    EP/H050787/1
  • 财政年份:
    2010
  • 资助金额:
    $ 127.84万
  • 项目类别:
    Research Grant
Materials World Network: III-V Bismide Materials for IR and Mid IR Semiconductors
材料世界网络:用于红外和中红外半导体的 III-V 双酰胺材料
  • 批准号:
    EP/G064725/1
  • 财政年份:
    2009
  • 资助金额:
    $ 127.84万
  • 项目类别:
    Research Grant

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Strained germanium photonic crystal membranes for scalable and efficient silicon-based photonic devices
用于可扩展且高效的硅基光子器件的应变锗光子晶体膜
  • 批准号:
    EP/V048732/1
  • 财政年份:
    2021
  • 资助金额:
    $ 127.84万
  • 项目类别:
    Research Grant
Fabrication of highly efficient photofunctional devices with heterojunctioned quantum dots
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