High performance complex oxide heterostructures for nanoelectronic devices

用于纳米电子器件的高性能复合氧化物异质结构

• 批准号: DP170104831
• 负责人: Prof Sean Li
• 金额: $ 26.14万
• 依托单位: The University of New South Wales
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2017
• 资助国家: 澳大利亚
• 起止时间: 2017-01-01 至 2019-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP170104831
• 关键词: performance; complex; oxide; heterostructures; nanoelectronic

This project aims to develop a material with ultrahigh electron mobility and conductivity well above today’s materials at room temperature to enable next generation nanoelectronics. The demand for higher performance and lower power consumption in electronic systems drives the creation of materials for devices in nanometre scale. The success of these materials depends on enhancement in carrier mobility and conductivity. This project will spatially separate the electron generation layer from the conduction layer by individually engineering the atomically sharp complex oxide heterointerfaces to enhance the electron mobility and density. This is expected to develop new materials and nanoelectronic technologies.

该项目旨在开发一种在室温下具有远高于当今材料的超高电子迁移率和电导率的材料，以实现下一代纳米电子学。电子系统对更高性能和更低功耗的需求推动了纳米级器件材料的成功开发。这些材料的性能取决于载流子迁移率和电导率的增强，该项目将通过单独设计原子级尖锐的复合氧化物异质界面来将电子产生层与传导层分离，以提高电子迁移率和密度。材料和纳米电子技术。