Beyond the Ferroelectric Field Effect Transistors

超越铁电场效应晶体管

• 批准号: DP220103229
• 负责人: Prof Sean Li
• 金额: $ 36.69万
• 依托单位: The University of New South Wales
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2022
• 资助国家: 澳大利亚
• 起止时间: 2022-01-01 至 2024-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP220103229
• 关键词: Beyond; Ferroelectric; Field; Effect; Transistors

The von Neumann paradigm is the foundation of modern computing systems, which are based on the data exchange between central processing unit (CPU) and memory. The physical separation between the CPU and memory will cause von Neumann bottleneck – a memory wall to limit the data processing speed for contextually intelligent applications. This project aims to develop a novel ferroelectric field effect transistor that integrates a ferroelectric material into a semiconductor transistor structure to merge logic and memory functionalities in a single-device level. This will solve the memory wall problem while provide low power, high speed, high density and long data retention time for future logic-in-memory and data centric computing paradigms.

冯诺依曼范式是现代计算系统的基础，它基于中央处理器（CPU）和内存之间的数据交换，CPU和内存之间的物理分离将导致冯诺依曼瓶颈——限制数据的内存墙。该项目旨在开发一种新型铁电场效应晶体管，将铁电材料集成到半导体晶体管结构中，以在单器件级别合并逻辑和存储器功能，这将解决存储器墙问题。低的为未来的内存逻辑和以数据为中心的计算范例提供强大的功能、高速、高密度和长数据保留时间。