GaAs-based vertical-cavity surface-emitting lasers with GaSb quantum rings (QRVCSELs)

具有 GaSb 量子环的 GaAs 垂直腔表面发射激光器 (QRVCSEL)

• 批准号: 103444
• 金额: $ 32.55万
• 依托单位: IQE PLC
• 依托单位国家: 英国
• 项目类别: Collaborative R&D
• 财政年份: 2018
• 资助国家: 英国
• 起止时间: 2018 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=103444
• 关键词: GaAs; based; vertical; cavity; surface

Vertical-cavity surface-emitting lasers (VCSELs) are small, fast, cheap lasers with a low-divergence circular-beam profile. They are ideally suited for sending signals down the optical fibres that are used to carry the vast amounts of information that we take for granted every day. VCSELs are already widely available for generating light in 600 to 1100 nm range for datacoms applications, e.g. relaying information around a datacentre, but, because of the distributed Bragg reflector (DBR) technology that is the key to their operation, they are invariably GaAs-based. This has limited their use in telecoms applications, which requires longer wavelengths (1260 nm to 1675 nm): it has proven difficult to generate a GaAs-based active region that emits at telecoms wavelengths. In this feasibility study we will assess the potential for commercially-viable, GaAs-based VCSELs, that can operate cooler-free at high-speed and at telecoms wavelengths, by exploiting the novel self-assembled GaSb quantum ring technology developed in Lancaster in the active region of the device.

垂直腔表面发射激光器 (VCSEL) 是一种小型、快速、廉价的激光器，具有低发散圆形光束轮廓。它们非常适合沿着光纤发送信号，光纤用于承载我们每天认为理所当然的大量信息。 VCSEL 已广泛用于产生 600 至 1100 nm 范围内的光，用于数据通信应用，例如：围绕数据中心中继信息，但是，由于分布式布拉格反射器 (DBR) 技术是其运行的关键，因此它们总是基于 GaAs。这限制了它们在电信应用中的使用，因为电信应用需要更长的波长（1260 nm 至 1675 nm）：事实证明，很难生成以电信波长发射的基于 GaAs 的有源区域。在这项可行性研究中，我们将通过利用兰开斯特开发的新型自组装 GaSb 量子环技术，评估商业上可行的基于 GaAs 的 VCSEL 的潜力，这种 VCSEL 可以在高速和电信波长下无冷却器运行。设备的活动区域。