ナノクリスタルドープ光導波路及び次世代フォトニックデバイスへの適用

在纳米晶体掺杂光波导和下一代光子器件中的应用

基本信息

批准号：
09305021
负责人：
KATO Isamu
金额：
$ 22.46万
依托单位：
Waseda University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09305021/
关键词：
Microwave Plasma CVD Silicon Nano Crystal Multilayer Films Luminescent Material Optical Waveguides Type Filter MBE semiconductor nanocrystal wavelength converter 分子線エピタキシャル成長法半導体光機能デバイス InAs 水素化アモルファスシリコン窒化シリコン分子線セルヒ化ガリウム /

项目摘要

We fabricate silicon nano crystal (nc-Si) using Double Tubed Coaxial Line Type Microwave Plasma Chemical Vapor Deposition (MPCVD) and evaluate its photo luminescence characteristics varying fabrication conditions. Furthermore, although it was thought that the ion bombard energy was related to creation of Si nano crystal, this was clarified by analyzing creation process. And we clarify the validity of analysis by calculating the number of Si nano crystals.On the other hand, a new silicons photonic materials is aimed at, we fabricate a-Si : H/Si3N4 multilayer films which consists of a-Si : H and Si_3N_4 and evaluate its film quality. A theoretical curve and an experiment value of optical band gap of multilayer films were agreeing well, and we can fabricate the multilayer films of good quality. And this is processed into slab waveguides. As a result, this waveguides have polarization properties, TE-mode-cut and TM-mode-pass. And when intensity of pumping lights increase, the extinction ratio rises.Fundamental studies for realizing high quality compound semiconductor nanocrystals with which are in high-density and precisely position-controlled have been carried out. Nano-oder dips with 300nm diameter and 2-nm depth were formed on GaAs substrates by using electron beam exposure (EBX) method, and InAs was grown on them by molecular beam epitaxy (MBE) method. As a result, position-controlled nanocrystals of 25nm height with ring shapes associated with those dips were successfully fabricated, and room-temperature PL was measured. Also possibility for stacked structure was clarified. In parallel, photonic functional devices which the nanocrysrtals will be utilized for higher device performances were investigated to have realized foperations of multimode interference wavelength converters and photonic switches, and fundamental issues for the device application were solved.

我们使用双管同轴线型微波等离子体化学气相沉积 (MPCVD) 制造硅纳米晶体 (nc-Si)，并评估其在不同制造条件下的光致发光特性。此外，虽然人们认为离子轰击能量与Si纳米晶体的生成有关，但通过分析生成过程澄清了这一点。并通过计算Si纳米晶体的数量来阐明分析的有效性。另一方面，针对新型硅光子材料，我们制备了a-Si：H/Si3N4多层薄膜，该薄膜由a-Si：H和Si3N4组成。 Si_3N_4并评价其薄膜质量。多层薄膜的光学带隙理论曲线与实验值吻合较好，可以制备出质量良好的多层薄膜。然后将其加工成平板波导。因此，该波导具有偏振特性、TE 模截止和 TM 模通过。并且当泵浦光强度增加时，消光比上升。针对实现高密度、精确位置控制的高质量化合物半导体纳米晶进行了基础研究。采用电子束曝光（EBX）方法在GaAs衬底上形成直径300nm、深度2nm的纳米级凹陷，并通过分子束外延（MBE）方法在其上生长InAs。结果，成功制造了高度为 25 nm、具有与这些凹陷相关的环形形状的位置控制纳米晶体，并测量了室温 PL。还阐明了堆叠结构的可能性。同时，研究了利用纳米晶提高器件性能的光子功能器件，实现了多模干涉波长转换器和光子开关的工作，解决了器件应用的基本问题。