High mobilitY Printed nEtwoRks of 2D Semiconductors for advanced electrONICs

用于先进电子产品的高移动性二维半导体印刷网络

• 批准号: 10106730
• 金额: $ 68.61万
• 依托单位: UNIVERSITY OF CAMBRIDGE
• 依托单位国家: 英国
• 项目类别: EU-Funded
• 财政年份: 2024
• 资助国家: 英国
• 起止时间: 2024 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=10106730
• 关键词: mobilitY; Printed; nEtwoRks; 2D; Semiconductors

FFuture technological innovations in areas such as the Internet of things and wearable electronics require cheap, easily deformable and reasonably performing printed electronic circuitries. However, currentstate-of-the-art (SoA) printed electronic devicesshow mobilities of ~10 cm2/Vs, about ×100 lower than traditional Si-electronics. A promising solution to print devices from 2D semiconducting nanosheets gives relatively low mobilities (~0.1 cm2/Vs) due to the rate-limiting nature of charge transfer (CT) across inter-nanosheet junctions. By minimising the junction resistance RJ, the mobility of printed devices could match that of individual nanosheets, i.e., up to 1000 cm2/Vs for phosphorene, competing with Si. HYPERSONIC is a high-risk, high-gain interdisciplinary project exploiting new chemical and physical approaches to minimise RJ in printed nanosheet networks, leading to ultra-cheap printed devices with a performance ×10–100 beyond the SoA. The chemical approach relies on chemical crosslinking of nanosheets with (semi)conducting molecules to boost inter-nanosheet CT. The physical approach involves synthesising high-aspect-ratio nanosheets, leading to low bending rigidity and increased inter-nanosheet interactions, yielding conformal, large-area junctions of >10e4 nm2 to dramatically reduce RJ. Our radical new technology will use a range of n- or p-type nanosheets to achieve printed networks with mobilities of up to 1000 cm2/Vs. A comprehensive electrical characterisation of all nanosheet networks will allow us to not only identify those with ultra-high mobility but also to fully control the relation between basic physics/chemistry and network mobility. We will demonstrate the utility of our technology by using our best-performing networks as complementary field-effect devices in next- generation, integrated, wearable sensor arrays. Printed digital and analog circuits will read and amplify sensor signals, demonstrating a potential commercialisable application.

诸如物联网和可穿戴电子设备等领域的FFUTURE技术创新需要便宜，易于变形且表现合理的印刷电子电路。但是，现有的（SOA）印刷的电子设备的迁移率约为10 cm2/vs，比传统的Si-Electronics低约×100。从2D半导体纳米片上打印设备的一种承诺解决方案，由于跨纳米层连接的电荷传递（CT）的限制性质，相对低的迁移率（〜0.1 cm2/vs）。通过最大程度地降低连接电阻RJ，印刷设备的迁移率可以与单个纳米片相匹配，即用于磷烯的纳米片，即高达1000 cm2/vs，与SI竞争。 Hypersonic是一个高风险，高获得的跨学科项目，利用新的化学和物理方法，以最大程度地减少印刷纳米片网络中的RJ，从而导致超便宜的印刷设备，其性能×10-100以外的SOA。化学方法依赖于纳米片的化学交联用（半）导电分子来增强纳米片间的CT。物理方法涉及合成高敏关系纳米片，导致弯曲刚度低和增加纳米片间相互作用，从而产生> 10e4 nm2的保形，大面积连接处，以大大减少RJ。我们的激进新技术将使用一系列的N-或P型纳米片来实现具有高达1000 cm2/vs的迁移率的印刷网络。所有纳米片网络的全面电气表征将使我们不仅可以识别那些具有超高流动性的人，而且还可以完全控制基本物理/化学和网络移动性之间的关系。我们将通过使用最佳性能网络作为下一代，集成，可穿戴的传感器阵列的完整现场效应设备来证明我们的技术实用性。印刷的数字和模拟电路将读取并放大传感器信号，以显示潜在的商业应用。