Towards High-quality Hetero-epitaxial III-V Semiconductor Nanowires

迈向高质量异质外延 III-V 族半导体纳米线

• 批准号: DP150100701
• 负责人: Em/Prof Jin Zou
• 金额: $ 22.46万
• 依托单位: The University of Queensland
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2015
• 资助国家: 澳大利亚
• 起止时间: 2015-01-01 至 2018-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP150100701
• 关键词: Towards; quality; Hetero; epitaxial; III

The use of semiconductor nanowires has uncovered many scientific curiosities and extended their potential applications in many fields. In general, nanowire growth is governed by metallic catalysts, involving nanowire nucleation and growth. So far, the role of catalysts during nanowire nucleation is not clear and needs urgent attention. This project aims to investigate the behaviour of catalysts before and during the nucleation of III-V nanowires by means of nano-characterisation to ultimately integrate high-quality III-V nanowires on silicon substrates. The new knowledge developed from this project is expected to provide critical insights for developing high-quality III-V nanowires integrated on silicon substrates.

半导体纳米线的使用揭示了许多科学好奇心，并扩展了其在许多领域的潜在应用。一般来说，纳米线的生长受金属催化剂的控制，涉及纳米线的成核和生长。迄今为止，催化剂在纳米线成核过程中的作用尚不清楚，亟待关注。该项目旨在通过纳米表征研究 III-V 族纳米线成核之前和成核过程中催化剂的行为，最终将高质量的 III-V 族纳米线集成到硅衬底上。该项目开发的新知识预计将为开发集成在硅基板上的高质量 III-V 纳米线提供重要见解。