Structure of Epitaxial Semiconductor Quantum Dots

外延半导体量子点的结构

• 批准号: LX0455717
• 负责人: Em/Prof Jin Zou
• 金额: $ 3.38万
• 依托单位: The University of Queensland
• 依托单位国家: 澳大利亚
• 项目类别: Linkage - International
• 财政年份: 2004
• 资助国家: 澳大利亚
• 起止时间: 2004-08-01 至 2007-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/LX0455717
• 关键词: Structure; Epitaxial; Semiconductor; Quantum; Dots

Epitaxially grown semiconductor quantum dots have received extensive attention in recent years due to their potential applications in electronic and optoelectronic devises. However, the quality of current grown quantum dots is still very far from that required for real device applications due to a lack of detailed knowledge of their nanostructures. This project aims to combine the strength of growing semiconductor quantum dots at Fudan University and the world-class characterisation facilities (advanced transmission electron microscopy) at the University of Queensland to actively explore optimum paths for epaxially growing device-quality semiconductor quantum dots.

近年来，外延生长的半导体量子点因其在电子和光电器件中的潜在应用而受到广泛关注。然而，由于缺乏对其纳米结构的详细了解，当前生长的量子点的质量仍与实际设备应用所需的质量相距甚远。该项目旨在结合复旦大学半导体量子点生长优势和昆士兰大学世界一流的表征设施（先进透射电子显微镜），积极探索外轴生长器件级半导体量子点的最佳路径。