IMMERSION COOLING OF MICROELECTRONIC CHIP WITH MICROCONFIGURED SURFACE

微结构表面微电子芯片的浸没式冷却

基本信息

批准号：
09650247
负责人：
TAKAMATSU Hiroshi
金额：
$ 1.54万
依托单位：
KYUSHU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650247/
关键词：
Pool Boiling Silicon Chip FC-72 Boiling Incipience Critical Heat Flux Heat Transfer Enhancement Reentrant Cavity Microconfigured Surface 電子機器の冷却 FC-72 高濡れ性液体

项目摘要

Although the recent developments of CMOS technology has resulted in a considerable decrease in the chip-level heat dissipation rate, it is obvious that the heat dissipation rate will increase again to a high level as the packaging density and switching speed of the electronic devices increase. Direct immersion cooling of electronic devices by use of dielectric liquids has been a promising method because of its high cooling potential. However, this is not in practical use mainly due to a high wall superheat required for boiling incipience associated with the use of dielectric liquids with a high wettability.In the present reasearch, boiling heat transfer of FC-72 from newly developed treated surfaces with micro-reentrant cavities was studied experimentally. The surface structure was fabricated on a silicon chip by use of microelectronic fabrication techniques. Several kinds of treated surfaces with the combinations of three cavity mouth diameters (1.6 IOTAm, 3 mum and 9 mum) and two num … More ber densities of the micro-reentrant cavities (8I 1/cm^2 and 96CHI 10^3 1/cm^2) were tested along with a smooth surface. Experiments were conducted at the liquid subcoolings of 3 K and 25 K with degassed and gas-dissolved FC-72. The results were as follows :(1)While the wall superheat at boiling incipience was strongly dependent on the dissolved gas content, it was little affected by the cavity mouth diameter and the liquid subcooling.(2)For the degassed FC-72, the boiling incipience superheat was generally higher than the prediction of the heterogeneous nucleation theory which assumed the force balance of an embryonic bubble at the cavity mouth. This suggest that even the reentrant cavity with small mouth such as 1.6 mum is inactive for the liquid with high wettability.(3)The heat transfer performance of the silicon chip with micro-reentrant cavities was considerably improved over the smooth chip.(4)The heat transfer performance of the gas-dissolved FC-72 was higher than that of the degassed FC-72. Less

虽然近年来CMOS技术的发展导致芯片级散热率大幅下降，但随着电子器件封装密度和开关速度的提高，显然散热率将再次提高到较高水平。由于其高冷却潜力，使用介电液体对电子器件进行直接浸入式冷却一直是一种有前途的方法，然而，这并未实际使用，主要是由于与使用介电液体相关的沸腾初期所需的高壁过热度。本研究对新开发的微凹腔表面的FC-72的沸腾传热进行了实验研究，该表面结构是采用多种微电子制造技术在硅芯片上制造的。表面具有三个腔口直径（1.6 IOTAm、3 mum 和 9 mum）和微重入腔的两个数字密度（8I）的组合1/cm^2 和 96CHI 10^3 1/cm^2) 在光滑表面上进行了实验，使用脱气和气体溶解的 FC-72 在 3 K 和 25 K 的液体过冷度下进行。如下：(1)沸腾初期壁面过热度与溶解气体含量有很大关系，而受腔口直径和液体过冷度的影响很小。(2)脱气后的FC-72，沸腾初期过热度普遍高于异相成核理论的预测，该理论假定胚胎气泡在空腔口处的力平衡，这表明即使是具有小口（例如1.6μm）的折返空腔也是如此。 (3)微凹腔硅片的传热性能较光滑芯片有显着提高。(4)硅片的传热性能气体溶解的 FC-72 高于脱气的 FC-72。