Study on GaN-based blue vertical cavity surface emitting laser on Si

硅基GaN基蓝色垂直腔面发射激光器研究

• 批准号: 09650049
• 负责人: EGAWA Takashi
• 金额: $ 2.18万
• 依托单位: Nagoya Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650049/
• 关键词: Vertical cavity surface emitting laser; distributed Bragg reflector; MOCVD; an; Multi quantum well; LED; Si; Cavity; 歪超格子; クラック; 反射率; AlGaN; InGaNダブルヘテロ構造; 自由励起子; 束縛励起子; 面発光レーザー; n型窒化ガリウム; P型窒化ガリウム

GaN, AlN and their alloys have direct transition type band gap structure and have attracted much attention for optical devices in the blue-ultraviolet region. GaN-based edge emitting lasers have been extensively studies and have achieved room temperature continuous wave operation. Recently, GaN-based vertical cavity surface emitting lasers (VCSELs) with a distributed Bragg reflector (DBR) have attracted much interest for various optical applications due to the fabrication of a smooth mirror without a cleavage technique. The DBR is also effective in improving the output power of LED. Thus, the DBR plays an important rule to fabricate high performance optical devices such as LED and VCSEL. In this study, the use of the GaN/AlィイD20.27ィエD2GィイD20.73ィエD2 DBR as a bottom mirror has improved the characteristics of InGaN MQW LED sapphire. Moreover, the reflectivity as high as 98% has been obtained by the use of the strained layer superlattice (SLS) beneath the DBR structure. The InGaN MQW LED grown on the 15 pairs of DBR with a reflectivity of 75% was fabricated for the first time to the best of our knowledge. The output power of 120μW at 435 nm was about 1.5 times as large as that of the conventional LED. The DBR is very promising for the fabrication of high performance GaN-based LED and VCSEL.

GaN、AlN及其合金具有直接过渡型带隙结构，在蓝紫外区的光学器件中备受关注，近年来GaN基边发射激光器得到了广泛的研究并实现了室温连续波工作。带有分布式布拉格反射器（DBR）的基于垂直腔表面发射激光器（VCSEL）由于无需劈裂技术制造光滑镜子而引起了各种光学应用的极大兴趣。DBR 也很有效。因此，DBR 在制造 LED 和 VCSEL 等高性能光学器件方面发挥着重要作用。在本研究中，使用 GaN/AlD20.27D2GD20 .73D2 DBR 作为底镜得到了改善。 InGaN MQW LED蓝宝石的特性，并且通过使用应变层获得了高达98%的反射率。据我们所知，首次在 15 对 DBR 上生长的 InGaN MQW LED 的反射率达到 75%，在 435 nm 处的输出功率约为 1.5。 DBR 的尺寸是传统 LED 的两倍，对于制造高性能 GaN 基 LED 和 VCSEL 非常有前景。

项目成果

T. Egawa et al.: "Characteristics of a GaN Metal Semiconductor Fiel-Effect Transistor Grown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition"Jpn. J. Appl. Phys.. Vol. 38, No. 4B. 2630-2633 (1999)

T. Ekawa 等人：“通过金属有机化学气相沉积在蓝宝石衬底上生长的 GaN 金属半导体场效应晶体管的特性”Jpn。

H. Ishikawa et al.: "GaN on Si Substrate with AlGaN/AlN Intermediate Layer"Jpn. J. Appl. Phys.. Vol. 38 No. 2. L492-L494 (1999)

H. Ishikawa 等人：“具有 AlGaN/AlN 中间层的 Si 衬底上的 GaN”Jpn。

G.Y.Zhao et al.: "Energy-gap narrowing in a current injected InGaN/AlGaN surface light emitting diode" Appl. Phys. Lett.71・17. 2424-2426 (1997)

G.Y.Zhao 等：“电流注入 InGaN/AlGaN 表面发光二极管中的能隙变窄”Appl.71・17（1997）。

T. Egawa: "Characteristics of a GaN Metal Semiconductor Field-Effect Transistor Grown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition"Jpn. J. Appl. Phys.. 38,4B. 2630-2633 (1999)

T. Ekawa：“通过金属有机化学气相沉积在蓝宝石衬底上生长的 GaN 金属半导体场效应晶体管的特性”Jpn。

T.Egawa et al.: "Investigations of SiO_2/n-GaN and SiN_4/n-GaN insulator-semiconductor interfaces with low interface state density" Appl.Phys.Lett.73・6. 809-811 (1998)

T.Ekawa等人：“具有低界面态密度的SiO_2/n-GaN和SiN_4/n-GaN绝缘体-半导体界面的研究”Appl.Phys.Lett.73・6（1998）。