Development of oxide semiconductor and dielectric electronics using helicon-wave-excited-plasma sputtering methods

使用螺旋波激发等离子体溅射方法开发氧化物半导体和介电电子器件

基本信息

批准号：
16360146
负责人：
CHICHIBU Shigefusa
金额：
$ 6.14万
依托单位：
University of Tsukuba
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2004
资助国家：
日本
起止时间：
2004 至 2006
项目状态：
已结题

项目摘要

To progress 'Oxide Optoelectronics' using the helicon-wave-excited-plasma sputtering (HWPS) method, deposition of polycrystalline thin films, epitaxial growth of semiconductors, deposition of multilayer structures of dielectric materials, and metal oxides were carried out. Significant results are following.i) Effectiveness of the high-temperature-annealed self-buffer layer (HITAB) on the heteroepitaxy of ZnO and MgZnO was investigated for the epitaxial growth using HWPS method, namely HWPSE. Atomically flat HITAB was obtained by depositing 100-nm-thick films of ZnO or MgZnO at 500-600 ℃ followed by high-temperature annealing at 900-1000 ℃ for 1 hr. The ZnO epilayers grown on ZnO HITAB prepared on a-plane Al_2O_3 substrates exhibited a free-excitonic photoluminescence (PL) peak at low temperature, and the PL spectra at 300 K were dominated by the near-band-edge excitonic emissions.ii) As transparent conducting oxide (TCO) films for photovoltaic (PV) applications, indium tin oxide (ITO) as well as polycrystalline ZnO doped by Al or Ga were deposited by the HWPS method. The electron concentration of Ga-doped ZnO (ZnO : Ga) films was as high as 10_<20> cm_<-3>. For the light absorbing layers, good quality Cu (Ga_xIn_<1-x>)Se_2 films were prepared by the selenization technique using metalorganic sources.iii) Distributed Bragg reflectors (DBRs) composed of 8-pair SiO_2/ZrO_2 dielectric multilayers, of which central wavelength was tuned at B-exciton resonance wavelength of ZnO (366.5 nm), were fabricated using the reactive HWPS (R-HWPS) method. The reflectivity at 366. 5 nm was higher than 99. 5% and the stop-band width (R【greater than or equal】95%) was as large as 82 nm.iv) Delafossite structure CuAlO_2 films, which are expected to be p-type TCO films, were deposited by HWPS using Cu and Al metal targets, as well as by R-HWPS method using CuAlO_2 sintered target. Although low resistivity films are not yet obtained, delafossite structure was confirmed.

利用螺旋波激发等离子体溅射（HWPS）方法发展“氧化物光电子学”，在多晶薄膜沉积、半导体外延生长、介电材料多层结构和金属氧化物沉积方面取得了显着成果。 i) 高温退火自缓冲层（HITAB）对 ZnO 异质外延的有效性采用HWPS方法研究了MgZnO的外延生长，即在500-600 ℃沉积100 nm厚的ZnO或MgZnO薄膜，然后在900-1000 ℃高温退火1次，获得原子级平坦的HITAB。在 a 平面上制备的 ZnO HITAB 上生长的 ZnO 外延层Al_2O_3 基底在低温下表现出自由激子光致发光 (PL) 峰，并且 300 K 下的 PL 光谱主要由近带边激子发射主导。ii) 作为用于光伏 (PV) 的透明导电氧化物 (TCO) 薄膜在应用中，通过HWPS方法沉积了氧化铟锡（ITO）以及掺杂Al或Ga的多晶ZnO，其电子浓度为。 Ga掺杂ZnO(ZnO:Ga)薄膜的光吸收层厚度高达10_<20>cm_<-3>,采用硒化技术制备了优质的Cu(Ga_xIn_<1-x>)Se_2薄膜。 iii)由8对SiO_2/ZrO_2电介质多层膜组成的分布式布拉格反射器(DBR)，其中心波长调谐为采用反应式HWPS（R-HWPS）方法制备了ZnO的B激子共振波长（366.5 nm），其在366. 5 nm处的反射率高于99. 5%，阻带宽度（R【大于）。或等于】95%) 高达 82 nm。iv) 通过以下方法沉积了铜铁矿结构的 CuAlO_2 薄膜，预计将成为 p 型 TCO 薄膜使用Cu和Al金属靶材的HWPS，以及使用CuAlO_2烧结靶材的R-HWPS方法，虽然尚未获得低电阻率薄膜，但是确认了铜铁矿结构。

项目成果

期刊论文数量（31）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Growth of single-phase CuInGaSe_2 photoabsorbing alloy films by the selenization method using diethylselenide as a less-hazardous Se source

以二乙基硒为低毒硒源，利用硒化法生长单相CuInGaSe_2光吸收合金薄膜

DOI：
发表时间：
2007
期刊：
Thin Solid Films 515
影响因子：
0
作者：
M.Sugiyama;A.Kinoshita;M.Fukaya;H.Nakanishi;S.F.Chichibu
通讯作者：
S.F.Chichibu

Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer

DOI：
10.1063/1.1832734
发表时间：
2004-12
期刊：
Applied Physics Letters
影响因子：
4
作者：
T. Onuma;S. Chichibu;A. Uedono;Y. Yoo;T. Chikyow;T. Sota;M. Kawasaki;H. Koinuma
通讯作者：
T. Onuma;S. Chichibu;A. Uedono;Y. Yoo;T. Chikyow;T. Sota;M. Kawasaki;H. Koinuma

Helicon-wave-excited Plasma Sputtering Deposition of Ga-doped ZnO Transparent Conducting Films

螺旋波激发等离子体溅射沉积 Ga 掺杂 ZnO 透明导电薄膜

DOI：
发表时间：
2006
期刊：
Physica Status Solidi (a) 203(11)
影响因子：
0
作者：
M.Sugiyama;A.Murayama;T.Imao;K.Saiki;H.Nakanishi;S.F.Chichibu
通讯作者：
S.F.Chichibu

Recombination dynamics of excitons in MgO. 11ZnO. 890 alloy films grown using the high-temperature-annealed self-buffer layer by laser-assisted molecular-beam epitaxy

MgO 中激子的复合动力学。

DOI：
发表时间：
2007
期刊：
Applied Physics Letters 90
影响因子：
0
作者：
M.Kubota;T.Onuma;A.Tsukazaki;A.Ohtomo;M.Kawasaki;T.Sota;S.F.Chichibu
通讯作者：
S.F.Chichibu

Exeiton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO

ZnO 中激子极化子光谱和室温光致发光效率的限制因素

DOI：
发表时间：
2005
期刊：
Semiconductor Science and Technology 20
影响因子：
0
作者：
S.F.Chichibu;A.Uedono;A.Tsukazaki;T.Onuma;M.Zamfirescu;A.Ohtomo;A.Kavokin;G.Cantwell;C.W.Litton;T.Sota;M.Kawasaki
通讯作者：
M.Kawasaki