SYNTHESIS AND CHARACTERIZATION OF NANOCRYSTALLINE SILICON BY ATMOSPHERICS PRESSURE PLASMA JET -ELECTRONIC AND OPTICAL PROPERTIES-

通过大气压等离子体喷射合成纳米晶硅并表征-电子和光学特性-

• 批准号: 14550289
• 负责人: SHIRAI Hajime
• 金额: $ 1.73万
• 依托单位: Saitama university
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14550289/
• 关键词: nanocrystalline silicon; plasma jet; atmospheric pressure plasma; visible photoluminescence; 塩素系材料; 大気圧マイクロプラズマ; ナノ結晶; シリコン

Luminescent nanocrystalline silicon dots were fabricated on thermally grown SiO_2 at 120℃ by rf plasma-enhanced chemical vapor deposition using tetrachlorosilane, SiCl_4 and H_2. As-deposited Si dots exhibits photoluminescence (PL) in the visible region, consisting of two broad bands corresponding to photon energies of 1.38 and 1.48 eV. Storage in air enhances PL and shifts the PL peak energy to higher wavelengths for dots of diameter less than 10 nm. Fourier transform attenuated total reflection absorption spectroscopy (FTIR-ATR) study reveals that the spontaneous oxidation proceeds until saturation after 70 h at dot sizes of 3-5 nm. The relationship between PL intensity, blueshift of the PL peak energy, and surface termination species during oxidation indicates that these changes are attributed yo the increased density of radaitive centers at the Si nanocrystal dot/SiO_2 interface and enhancement of quantum confinement effect. In addition, we have developed the rf microplasma jet at atmospheric pressure. We also attempted the quick recrystallization of amorphous silicon using an plasma jet of argon. The recrystallized region also exhibits the strong visible PL.

采用四氯硅烷、SiCl_4和H_2在120℃下通过射频等离子体增强化学气相沉积在热生长的SiO_2上制备发光纳米晶硅点，沉积的Si点在可见光区域表现出光致发光（PL），由对应于的两个宽带组成。 1.38 和 1.48 eV 的光子能量存储在空气中可增强 PL 并移动 PL 峰值。小于 10 nm 的点的能量到更高波长的傅里叶变换衰减全反射吸收光谱 (FTIR-ATR) 研究直径表明，在 3-5 nm 的点尺寸下，自发氧化会在 70 小时后进行直至饱和。强度、PL 峰值能量的蓝移和氧化过程中的表面终止物质表明这些变化归因于硅纳米晶体辐射中心密度的增加点/SiO_2界面和量子限制效应的增强此外，我们还尝试使用氩等离子体射流实现非晶硅的快速再结晶，再结晶区域也表现出强可见光PL。 。

项目成果

K.Kurosaki, K.Hashimoto, A.Nakao, H.Shirai: "Photoluminescence and optical characterizations of nanocrystalline silicon dots formed by plasma-enhanced chemical vapor deposition"Japan Journal of Applied Physics. 42. 6296-6302 (2003)

K.Kurosaki、K.Hashimoto、A.Nakao、H.Shirai：“等离子体增强化学气相沉积形成的纳米晶硅点的光致发光和光学特性”日本应用物理学杂志。

H.Shirai, T.Tsukamoto, K.Kurosaki: "Luminescent Silicon Nanocrystal Dots Fabricated by SiCl_4/H_2 rf Plasma-Enhanced Chemical Vapor Deposition"Physica E. Vol.16. 388-394 (2003)

H.Shirai、T.Tsukamoto、K.Kurosaki：“通过 SiCl_4/H_2 射频等离子体增强化学气相沉积制造的发光硅纳米晶体点”Physica E. Vol.16。

H.Shirai, T.Tsukamoto, K.Kurosaki: "Low-Temperature Formation of Si-Nanocrystal Dots from Chlorinated Materials by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition and Optical Properties"Solid State Phenomena. Vol.93. 275-280 (2003)

H.Shirai、T.Tsukamoto、K.Kurosaki：“通过射频等离子体增强化学气相沉积和光学特性从氯化材料中低温形成硅纳米晶体点”固态现象。

白井肇(分担): "マイクロ波プラズマの技術"オーム社. 159-170 (2003)

Hajime Shirai（贡献者）：“微波等离子体技术”Ohmsha 159-170 (2003)。

T.Ito, Y.Ikeda, H.Shirai: "Disorder-Induced Nucleation in the Nanocrystalline Silicon Film Growth from Chlorinated Materials by RF Plasma-Enhanced Chemical Vapor Deposition"Journal of Non-Crystalline Solids. (印刷中). (2004)

T.Ito、Y.Ikeda、H.Shirai：“通过射频等离子体增强化学气相沉积从氯化材料生长纳米晶硅膜中的无序成核”非晶固体杂志（2004 年）。