Study of optical micro systems by monolithic integration of silicon with nitride semiconductor

硅与氮化物半导体单片集成光学微系统研究

• 批准号: 19106007
• 负责人: HANE Kazuhiro
• 金额: $ 69.64万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (S)
• 财政年份: 2007
• 资助国家: 日本
• 起止时间: 2007 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-19106007/
• 关键词: 光デバイス; 集積化; MEMS; 窒化物半導体; マイクロマシニング; 光集積デバイス; シリコンデバイス; 光デバイス; 集積化; MEMS; 窒化物半導体; マイクロマシニング; 光集積デバイス; シリコンデバイス

Integrating GaN light source devices with Si three-dimensional structures and micro actuators monolithically, functional micro-electro-mechanical systems (MEMS)for optical applications were developed. Crystal growth of GaN-LED on Si substrate, GaN crystal growth on micro-machined GaN/Si substrate, integration of GaN-LED with Si actuator, and fabrication of GaN actuator were carried out. Integrating GaN-LED with Si-MEMS, a variable lightning device, a micro fluorescent analysis chip etc. were demonstrated.

开发了与SI三维结构和微执行器整合地整合光源设备，从而开发了用于光学应用的功能性微电机力学系统（MEMS）。 GAN领导的Si底物的晶体生长，对微型GAN/SI底物的GAN晶体生长，GAN-LED与SI执行器的整合以及GAN执行器的制造。展示了与Si-Mem，可变的闪电设备，微荧光分析芯片等整合的。