STUDY FOR MECHANISM OF GIANT EXCHANGE ANISOTROPY AND DEVELOPMENT OF HIGH PERFORMANCE Mn BASED ANTIFERROMAGNETIC MATERIALS

巨交换各向异性机理研究及高性能锰基反铁磁材料的开发

• 批准号: 18360144
• 负责人: TSUNODA Masakiyo
• 金额: $ 10.27万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2006
• 资助国家: 日本
• 起止时间: 2006 至 2007
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18360144/
• 关键词: Exchange anisotorpy; Spinelectronics; hard disk drive; MRAM; Magnetic anisotropy; XMCD; Antiferromagnetism

The exchange anisotropy is a phenomenon to fix the spins in ferromagnet and utilized in spintronics devices such as magnetic random access memories and spin valve type reproducing head element in ultrahigh density magnetic recording system. The purpose of the present study is to understand the mechanism of exchange anisotropy and to develop the high performance antiferromagnetic materials, through the study of inducing mechanism of giant exchange anisotropy (J_K=1.3 erg/cm^2) that has been discovered by the present authors group. In this research project, following terms have been investigated. 1. Correlation between the microstructure and exchange anisotropy of the exchange biased bilayers. 2. Spin structure and magnetization process of antiferromagnetic layer by soft x-ray magnetic circular dichroism (XMCD). 3. Development of microscopic model for exchange biased bilayers and theoretical calculations. 4. Fabrication and estimation of theoretically designed practical exchange biased bilayers. Main results obtained are summarized as follows. Uncompensated antiferromagnetic spin induced at the interface was quantitatively investigated by XMCD technique. The uncompensated antiferromagnetic spins change their sign and magnitude, as the ferromagnetic Co-Fe layer composition is changed. While, the exchange biasing strength is also changed as a function of the Co-Fe composition, close correlation has been suggested between them. Standing on the above finding, ultra-thin Mn layer insertion at the interface has been designed to enhance the exchange anisotropy and experimentally confirmed the doubling strength of exchange anisotropy. From a dependence of exchange anisotropy on the antiferromagetic layer composition, it is suggested that the inserted Mn layer has 3Q spin structure differently from the bulk Mn, in order to trace the fcc structure of the underlying Mn-Ir layer.

交换各向异性是一种固定旋转的现象，可在超高密度磁性记录系统中重现磁性随机访问记忆和旋转阀类型等旋转设备，例如磁随机访问记忆和旋转阀型重现头部元件。本研究的目的是通过研究巨型交换各向异性的诱导机制（J_K = 1.3 erg/cm^2）来了解交换各向异性的机理并开发高性能抗铁磁材料。在该研究项目中，已经研究了以下术语。 1。微结构与交换各向异性之间的相关性。 2。通过软X射线磁性圆形二色性（XMCD）对抗铁磁层的自旋结构和磁化过程。 3。开发用于交换有偏双层和理论计算的微观模型。 4。理论设计的实用交换偏见双层的制造和估计。获得的主要结果总结如下。通过XMCD技术定量研究了在界面上诱导的未补偿的抗磁性自旋。随着铁磁co-FE层组成的变化，未补偿的抗铁磁旋转会改变其符号和幅度。尽管交换偏置强度也随着co-FE组成的函数而改变，但它们之间已经提出了密切相关性。站在上面的发现上，界面处的超薄MN层插入旨在增强交换各向异性，并通过实验证实了交换各向异性的两倍强度。从交换各向异性对抗铁氧基胶质层组成的依赖性，建议插入的MN层的旋转结构与大量MN不同，以追踪基础MN-IR层的FCC结构。

项目成果

交換バイアス反強磁性材料

交换偏压反铁磁材料

• 发表时间: 2007
• 期刊: 金属 77
• 作者: Y. Iida;T. Mori;M. Tsunoda;D. Y. Kim;K. Komagaki;M. Tsunoda;D. Y. Kim;角田匡清
• 通讯作者: 角田匡清

Enhancement of exchange anisotropy by ultra-thin Mn layer insertion at the interface of Mn-Ir/Co-Fe bilayers

通过在 Mn-Ir/Co-Fe 双层界面插入超薄 Mn 层增强交换各向异性

• 发表时间: 2007
• 作者: Y. Iida;T. Mori;M. Tsunoda;D. Y. Kim;K. Komagaki;M. Tsunoda;D. Y. Kim;角田匡清;K. Komagaki;M. Tsunoda;M. Tsunoda;D. Y. Kim;M. Tunoda;D. Y. Kim;M. Tsunoda;D. Y. Kim;M. Tsunoda;M. Tsunoda;D. Y. Kim;M. Tsunoda;D. Y. Kim;M. Tsunoda;D. Y. Kim;M.Tsunoda;D.Y.Kim;M.Tsunoda;M.Tsunoda;M.Tsunoda;D.Y.Kim;M. Tsunoda;M. Tsunoda;M. Tsunoda;角田匡清;角田匡清;三俣千春;M. Tsunoda;M. Tsunoda
• 通讯作者: M. Tsunoda

XMCD study of Mn-Ir/Co-Fe bilayers with giant exchange anisotropy

具有巨大交换各向异性的Mn-Ir/Co-Fe双层的XMCD研究

• 发表时间: 2006
• 作者: Y. Iida;T. Mori;M. Tsunoda;D. Y. Kim;K. Komagaki;M. Tsunoda;D. Y. Kim;角田匡清;K. Komagaki;M. Tsunoda;M. Tsunoda;D. Y. Kim;M. Tunoda;D. Y. Kim;M. Tsunoda;D. Y. Kim;M. Tsunoda;M. Tsunoda;D. Y. Kim;M. Tsunoda;D. Y. Kim;M. Tsunoda;D. Y. Kim;M.Tsunoda;D.Y.Kim;M.Tsunoda;M.Tsunoda;M.Tsunoda;D.Y.Kim;M. Tsunoda;M. Tsunoda;M. Tsunoda;角田匡清;角田匡清;三俣千春;M. Tsunoda;M. Tsunoda;C. Mitsumata;M. Takahashi;M. Takahashi;M. Takahashi;D. Y. Kim;D. Y. Kim;M. Tsunoda;M. Tsunoda;D. Y. Kim;M. Tsunoda;M. Tsunoda;M. Tsunoda;M. Tsunoda;D.Y. Kim;D. Y. Kim;M. Tsunoda;M. Tsunoda;K. Komagaki;K. Komagaki;D.Y. Kim;角田匡清;角田匡清;中村哲也;D. Y. Kim;M. Tsunoda;M. Tsunoda;T. Nakamura;駒垣幸次郎;K. Komagaki;M. Tsunoda
• 通讯作者: M. Tsunoda

Microscopic origin and role of uncompensated antiferromagnetic spins on exchange anisotropy

未补偿反铁磁自旋对交换各向异性的微观起源和作用

• 发表时间: 2007
• 作者: Y. Iida;T. Mori;M. Tsunoda;D. Y. Kim;K. Komagaki;M. Tsunoda;D. Y. Kim;角田匡清;K. Komagaki;M. Tsunoda;M. Tsunoda;D. Y. Kim;M. Tunoda;D. Y. Kim;M. Tsunoda;D. Y. Kim;M. Tsunoda;M. Tsunoda;D. Y. Kim;M. Tsunoda;D. Y. Kim;M. Tsunoda;D. Y. Kim;M.Tsunoda;D.Y.Kim;M.Tsunoda;M.Tsunoda;M.Tsunoda;D.Y.Kim;M. Tsunoda;M. Tsunoda;M. Tsunoda;角田匡清;角田匡清;三俣千春;M. Tsunoda
• 通讯作者: M. Tsunoda

交換結合バイアス積層膜における反強磁性層臨界膜厚の低減

交换耦合偏置堆叠薄膜中临界反铁磁层厚度的减小

• 发表时间: 2007
• 作者: Y. Iida;T. Mori;M. Tsunoda;D. Y. Kim;K. Komagaki;M. Tsunoda;D. Y. Kim;角田匡清;K. Komagaki;M. Tsunoda;M. Tsunoda;D. Y. Kim;M. Tunoda;D. Y. Kim;M. Tsunoda;D. Y. Kim;M. Tsunoda;M. Tsunoda;D. Y. Kim;M. Tsunoda;D. Y. Kim;M. Tsunoda;D. Y. Kim;M.Tsunoda;D.Y.Kim;M.Tsunoda;M.Tsunoda;M.Tsunoda;D.Y.Kim;M. Tsunoda;M. Tsunoda;M. Tsunoda;角田匡清;角田匡清;三俣千春
• 通讯作者: 三俣千春