Low temperature preparation of nano composite thin films for titania-systems by ECR plasma CVD.

ECR 等离子体 CVD 低温制备二氧化钛系统纳米复合薄膜。

• 批准号: 16360321
• 负责人: MASUMOTO Hiroshi
• 金额: $ 9.54万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-16360321/
• 关键词: ECR plasma; MOCVD; Titanium oxide; nano composite; low-temperature deposition; polyamide-imide resin; Rutile; photocatalytic; チタニア; 電子サイクロトロン共鳴; 化学気相析出法; ナノコンポジット膜; 有機金属錯体

Crystallized Zirconia (ZrO_2) thin films and titania nano composite thin films were deposited at low temperatures by liquid source electron cyclotron resonance (ECR) plasma MOCVD. The effects of deposition condition on the deposition rate, roughness, adhesiveness, structure, orientation, microstructure and behavior were investigated. The relationship among crystalline phases, microstructure and photocatalytic activity were investigated. The ECR plasma was significantly effective to prepare crystallized oxide (ZrO_2 and TiO_2) films at low temperatures. Ir system and Ru system double oxide film were prepared using MOCVD and a laser ablation as a catalyst electrode, and the electrode characteristic of the films were clarified.1.Preparation of ZrO_2 and TiO_2 Oxide Thin FilmThe films prepared by the liquid source ECR plasma MOCVD at low temperature were good crystalline films without cracks compared with the films prepared by thermal CVD. It succeeded in preparing crystalline ZrO_2 and TiO_2 (Anatase) film on polymer resin (polyamide-imide resin, melting point: 250C) without substrate heating.2.Photocatalytic Activity of TiO_2 FilmPhotocatalytic activity of the TiO_2 film prepared at O_2:N_2 = 9:1, substrate temperature=700 C and plasma power=900W became maximum value of 38%. The surface morphology of the film was granular structure, and its surface area was large. It was nano composite film of anatase with carbon.3.Electrode Characteristic of Ir System and Ru System Double Oxide FilmsThe relation between electrical conduction property and the crystal orientation of Ir system (IrO_2,SrIrO_3,BaIrO_3 and CaIrO_3) and Ru system (RuO_2,SrRuO_3,BaRuO_3 and CaRuO_3) double oxide epitaxial films were evaluated. It was clear that the optimal direction as electrode exists in each double oxide film.

采用液源电子回旋共振(ECR)等离子体MOCVD技术在低温下沉积了结晶氧化锆(ZrO_2)薄膜和二氧化钛纳米复合薄膜。研究了沉积条件对沉积速率、粗糙度、粘附性、结构、取向、微观结构和行为的影响。研究了晶相、微观结构和光催化活性之间的关系。 ECR等离子体在低温下制备结晶氧化物(ZrO_2和TiO_2)薄膜非常有效。采用MOCVD和激光烧蚀作为催化电极制备了Ir系和Ru系双氧化物薄膜，并阐明了薄膜的电极特性。1.ZrO_2和TiO_2氧化物薄膜的制备采用液体源ECR等离子体MOCVD制备薄膜。与热CVD制备的薄膜相比，低温下薄膜结晶性良好，无裂纹。在不加热基底的情况下，成功地在聚合物树脂（聚酰胺酰亚胺树脂，熔点：250C）上制备了结晶ZrO_2和TiO_2（锐钛矿）薄膜。2.TiO_2薄膜的光催化活性O_2:N_2=9时制备的TiO_2薄膜的光催化活性：如图1所示，基板温度＝700℃、等离子体功率＝900W，成为最大值38％。薄膜表面形貌呈粒状结构，表面积较大。三、Ir系和Ru系双氧化膜的电极特性Ir系(IrO_2、SrIrO_3、BaIrO_3和CaIrO_3)和Ru系(RuO_2、对SrRuO_3、BaRuO_3和CaRuO_3)双氧化物外延薄膜进行了评价。很明显，每个双氧化膜中都存在作为电极的最佳方向。

项目成果

Preparation of noble metal (Ru,Ir)-carbon nano-composites by MOCVD as catalytic electrode for oxygen sensors

MOCVD制备贵金属(Ru,Ir)-碳纳米复合材料作为氧传感器催化电极

• 发表时间: 2005
• 期刊: J.Metasble and Nanocrystalline Materials 24-25
• 作者: T.Kimura;G.Suzuki;T.Goto
• 通讯作者: T.Goto

Preparation of calcium phosphate films by radiofrequeency magnetron sputtering

射频磁控溅射制备磷酸钙薄膜

• 发表时间: 2005
• 期刊: Mater.Trans. 46・10
• 作者: T.Narushima;K.Ueda;T.Goto;H.Masumoto;T.Katsube;H.Kawamura;C.Ouchi;Y.Iguchi
• 通讯作者: Y.Iguchi

Microstructure and electrical conductivity of epitaxial SrRu0_3 thin films prepared on (001), (110) and (111) SrTiO_3 substrates by laser ablation

激光烧蚀在(001)、(110)和(111)SrTiO_3衬底上外延SrRu0_3薄膜的微观结构和电导率

• 发表时间: 2007
• 期刊: Mater. Trans. 48
• 作者: A.Ito;H.Masumoto;T.Goto
• 通讯作者: T.Goto

High-speed deposition of yttria-stabilized zirconia and titatnia films by laser chemical vapor deposition

激光化学气相沉积高速沉积氧化钇稳定氧化锆和氧化钛薄膜

• 发表时间: 2006
• 期刊: J.Ceram.Soc.Jpn. 114
• 作者: A.Ito;H.Masumoto;T.Goto;T.Kimura
• 通讯作者: T.Kimura

Effect of TiO_2 solid solution on the thermal conductivity of YSZ

TiO_2固溶体对YSZ导热系数的影响

• 发表时间: 2004
• 期刊: J.Ceram.Soc.Jpn.Suppl., PacRim5 Special Issue 112・5
• 作者: T.Narushima;K.Ueda;T.Goto;H.Masumoto;T.Katsube;H.Kawamura;C.Ouchi;Y.Iguchi;H.Miyazaki
• 通讯作者: H.Miyazaki