Study of relationship between oxygen deficiencies and electric characteristics of metal oxides, and improvement of thin film quality

研究金属氧化物缺氧与电特性的关系，提高薄膜质量

基本信息

批准号：
16360016
负责人：
YAMABE Kikuo
金额：
$ 4.86万
依托单位：
University of Tsukuba
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2004
资助国家：
日本
起止时间：
2004 至 2005
项目状态：
已结题

项目摘要

In this study, we measured and evaluated dielectric characteristics of HfO_2-based gate oxide films as a tyical metal oxide film, of which application to ULSI is developed.To suppress instability of electric characteristics at Si surface, thin interlayer silicon dioxide is inserted between the high-k film and Si substrate. It is pointed out that the interlayer film is attacked during adhesion of metal atoms and their dielectric characteristics are degraded. This result means that in manufacturing process of the metal oxide films, the dielectric characteristics of the interlayer thin films can be degraded.It is cleared that conduction of such thin high-k metal oxide films is limited not by interface but by their bulk quality. Carrier separation method of gate leakage currents gives us understanding that both electrons and holes contribute to conduction. Both electron and hole currents are attributed to conduction of intermediate defect levels such as oxygen deficiencies and oxygen inter … More stitials. To stabilize the leakage currents, it is important that these defects are excluded or controlled. Time dependence of both electron and hole currents is explained by non-uniform distribution of both trapped electrons and trapped holes. That is, the electrons are trapped near the gate electrode in the high-k gate dielectric films and the holes are trapped near the substrate.Study using mono-energetic positron beams gives us the evidence of oxygen deficiencies in high-k gate films. This study shows relationship between oxygen deficiencies and electric characteristics of high-k metal oxide thin film. Addition of nitrogen to high-k metal oxide films suppresses the gate leakage currents and their deviation. First principle calculation supports the effect of nitrogen addition.To realize high-performance function of integrated circuits by various kinds of thin metal oxides, it is shown that establishment of both more precise manufacturing processes of metal oxides and their evaluation technologies is necessary and collaboration of experimental and calculation physics is very important. Less

在这项研究中，我们测量和评估了HfO_2基栅氧化膜的介电特性，作为一种典型的金属氧化膜，并开发了其在ULSI中的应用。为了抑制Si表面电特性的不稳定性，在Si表面插入了薄层间二氧化硅。指出在金属原子粘附过程中，层间膜受到侵蚀，其介电特性下降，这一结果意味着在金属氧化物膜的制造过程中，层间膜的介电特性下降。很明显，这种薄的高 k 金属氧化物薄膜的传导不是受界面限制，而是受其体质量限制。栅极漏电流的载流子分离方法使我们了解到电子和空穴都有助于传导。电子和空穴电流均归因于中间缺陷能级的传导，例如氧缺陷和氧间质。为了稳定漏电流，重要的是排除或控制电子和空穴的时间依赖性。电流的解释是俘获电子和俘获空穴的不均匀分布，即电子被俘获在高k栅介质膜的栅电极附近，而空穴被俘获在衬底附近。使用单能正电子的研究。光束为我们提供了高 k 栅极薄膜中缺氧的证据。这项研究表明，在高 k 金属氧化物薄膜中添加氮可以抑制栅极漏电。第一性原理计算支持了氮添加的影响。通过各种薄金属氧化物实现集成电路的高性能功能，表明建立更精密的金属氧化物制造工艺及其评估技术。是必要的，实验和计算物理的协作非常重要。

项目成果

期刊论文数量（37）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Electrochem.Soc., Tran.Vol.1, No.1"Physics and Chemistry of SiO_2 and the Si-SiO_2 Interface-5"

Electrochem.Soc., Tran.Vol.1, No.1“SiO_2 和 Si-SiO_2 Interface-5 的物理和化学”

DOI：
发表时间：
2005
期刊：
影响因子：
0
作者：
R.Hasunuma;J.Okamoto;N.Tokuda;K.Yamabe
通讯作者：
K.Yamabe

Transient Capacitance in Metal-Oxide-Semiconductor Structures with Stacked Gate Dielectrics

具有堆叠栅极电介质的金属氧化物半导体结构中的瞬态电容

DOI：
发表时间：
2004
期刊：
Japanese Journal of Applied Physics 43(11B)
影响因子：
0
作者：
M.Goto;K.Higuchi;K.Torii;R.Hasunuma;K.Yamabe;
通讯作者：
K.Yamabe;

Characterization of Hf_<0.3>Al_<0.7>O_x Fabricated by Atomic-Layer Deposition Technique Using Monoenergetic Positron Beams

单能正电子束原子层沉积技术制备 Hf_<0.3>Al_<0.7>O_x 的表征

DOI：
发表时间：
2004
期刊：
Japanese Journal of Applied Physics 43
影响因子：
0
作者：
A.Uedono;M.Goto;K.Higuchi;K.Shiraishi;K.Yamabe;H.Kitajima;et al.
通讯作者：
et al.

First-principles studies of the intrinsic effect of nitrogen atoms on reduciton in gate leakage current through Hf-based high-k dielectrics

氮原子对减少 Hf 基高 k 电介质栅极漏电流的内在影响的第一性原理研究

DOI：
发表时间：
2005
期刊：
Appl.Phys.Lett. 86
影响因子：
0
作者：
N.Umezawa;K.Shiraishi;T.Ohno;H.Watanabe;T.Chikyow;K.Torii;K.Yamabe;K.Yamada;H.Kitajima;T.Arikado
通讯作者：
T.Arikado

Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams

单能正电子束原子层沉积技术制备 Hf0.3Al0.7Ox 的表征

DOI：
发表时间：
2004
期刊：
Jpn.J.Appl.Phys. 43(11B)
影响因子：
0
作者：
A.Uedono;M.Goto;K.Higuchi;K.Shiraishi;K.Yamabe;H.Kitajima;R.Mitsuhashi;A.Horiuchi;K.Torii;T.Arikado;R.Suzuki;T.Ohdaira;K.Yamada
通讯作者：
K.Yamada