Study of relationship between oxygen deficiencies and electric characteristics of metal oxides, and improvement of thin film quality

研究金属氧化物缺氧与电特性的关系，提高薄膜质量

基本信息

批准号：
16360016
负责人：
YAMABE Kikuo
金额：
$ 4.86万
依托单位：
University of Tsukuba
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2004
资助国家：
日本
起止时间：
2004 至 2005
项目状态：
已结题

项目摘要

In this study, we measured and evaluated dielectric characteristics of HfO_2-based gate oxide films as a tyical metal oxide film, of which application to ULSI is developed.To suppress instability of electric characteristics at Si surface, thin interlayer silicon dioxide is inserted between the high-k film and Si substrate. It is pointed out that the interlayer film is attacked during adhesion of metal atoms and their dielectric characteristics are degraded. This result means that in manufacturing process of the metal oxide films, the dielectric characteristics of the interlayer thin films can be degraded.It is cleared that conduction of such thin high-k metal oxide films is limited not by interface but by their bulk quality. Carrier separation method of gate leakage currents gives us understanding that both electrons and holes contribute to conduction. Both electron and hole currents are attributed to conduction of intermediate defect levels such as oxygen deficiencies and oxygen inter … More stitials. To stabilize the leakage currents, it is important that these defects are excluded or controlled. Time dependence of both electron and hole currents is explained by non-uniform distribution of both trapped electrons and trapped holes. That is, the electrons are trapped near the gate electrode in the high-k gate dielectric films and the holes are trapped near the substrate.Study using mono-energetic positron beams gives us the evidence of oxygen deficiencies in high-k gate films. This study shows relationship between oxygen deficiencies and electric characteristics of high-k metal oxide thin film. Addition of nitrogen to high-k metal oxide films suppresses the gate leakage currents and their deviation. First principle calculation supports the effect of nitrogen addition.To realize high-performance function of integrated circuits by various kinds of thin metal oxides, it is shown that establishment of both more precise manufacturing processes of metal oxides and their evaluation technologies is necessary and collaboration of experimental and calculation physics is very important. Less

在这项研究中，我们测量和评估了基于HFO_2的栅极氧化物膜作为典型的金属氧化物膜的饮食特征，开发了对ULSI的应用。为了抑制Si表面上的电气特征的不稳定性，将稀薄的二氧化硅二氧化硅插入了高k膜之间。可以指出的是，层间膜在金属原子的粘合剂中受到攻击，其顽固的特征被降解。该结果意味着，在金属氧化物膜的制造过程中，可以降解层层薄膜的根部特性。可以清除这种稀薄的高k金属氧化物膜的传导不受界面的限制，而是受其大体质量的限制。载体分离方法的闸门泄漏电流使我们了解到电子和孔都会导致传导。电子电流和孔电流都归因于中间缺陷水平的传导，例如氧不足和氧气间……更多的电流。为了稳定泄漏电流，必须排除或控制这些缺陷很重要。电子和孔电流的时间依赖性通过捕获的电子和被困的孔的不均匀分布来解释。也就是说，电子被困在高k门二世膜中的栅极电子附近，并将孔捕获在基板附近。使用单能正电子束进行研究，使我们有证据表明高k栅极膜中的氧不足。这项研究显示了氧缺陷与高K金属氧化物薄膜的电特性之间的关系。将氮添加到高K金属氧化物膜中抑制了闸门泄漏电流及其出发。第一个原理计算支持氮的添加效果。要通过各种薄金属氧化物实现综合电路的高性能功能，这表明，必须建立更精确的金属氧化物及其评估技术的制造过程，而实验性和计算物理学的协作非常重要。较少的

项目成果

期刊论文数量（37）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Electrochem.Soc., Tran.Vol.1, No.1"Physics and Chemistry of SiO_2 and the Si-SiO_2 Interface-5"

Electrochem.Soc., Tran.Vol.1, No.1“SiO_2 和 Si-SiO_2 Interface-5 的物理和化学”

DOI：
发表时间：
2005
期刊：
影响因子：
0
作者：
R.Hasunuma;J.Okamoto;N.Tokuda;K.Yamabe
通讯作者：
K.Yamabe

Transient Capacitance in Metal-Oxide-Semiconductor Structures with Stacked Gate Dielectrics

具有堆叠栅极电介质的金属氧化物半导体结构中的瞬态电容

DOI：
发表时间：
2004
期刊：
Japanese Journal of Applied Physics 43(11B)
影响因子：
0
作者：
M.Goto;K.Higuchi;K.Torii;R.Hasunuma;K.Yamabe;
通讯作者：
K.Yamabe;

Characterization of Hf_<0.3>Al_<0.7>O_x Fabricated by Atomic-Layer Deposition Technique Using Monoenergetic Positron Beams

单能正电子束原子层沉积技术制备 Hf_<0.3>Al_<0.7>O_x 的表征

DOI：
发表时间：
2004
期刊：
Japanese Journal of Applied Physics 43
影响因子：
0
作者：
A.Uedono;M.Goto;K.Higuchi;K.Shiraishi;K.Yamabe;H.Kitajima;et al.
通讯作者：
et al.

First-principles studies of the intrinsic effect of nitrogen atoms on reduciton in gate leakage current through Hf-based high-k dielectrics

氮原子对减少 Hf 基高 k 电介质栅极漏电流的内在影响的第一性原理研究

DOI：
发表时间：
2005
期刊：
Appl.Phys.Lett. 86
影响因子：
0
作者：
N.Umezawa;K.Shiraishi;T.Ohno;H.Watanabe;T.Chikyow;K.Torii;K.Yamabe;K.Yamada;H.Kitajima;T.Arikado
通讯作者：
T.Arikado

Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams

单能正电子束原子层沉积技术制备 Hf0.3Al0.7Ox 的表征

DOI：
发表时间：
2004
期刊：
Jpn.J.Appl.Phys. 43(11B)
影响因子：
0
作者：
A.Uedono;M.Goto;K.Higuchi;K.Shiraishi;K.Yamabe;H.Kitajima;R.Mitsuhashi;A.Horiuchi;K.Torii;T.Arikado;R.Suzuki;T.Ohdaira;K.Yamada
通讯作者：
K.Yamada