Light-Emitting Mechanism of Rare-Earth Doped III-V Compound Semiconductor and the Light-Emitting Devices of Carrier Injection Type

稀土掺杂III-V族化合物半导体的发光机理及载流子注入型发光器件

基本信息

批准号：
03650022
负责人：
UEKUSA Shin-ichiro
金额：
$ 1.15万
依托单位：
Meiji University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1991
资助国家：
日本
起止时间：
1991 至 1992
项目状态：
已结题

项目摘要

Photoluminescence (PL) and electroluminescence (EL) spectra of rare earth doped III-V compound semiconductors and Si were investigated in order to clear the light emitting mechanism of the samples prepared by three methods such as liquid-phase epitaxy (LPE), thermal diffusion and ion-implantaion. We observed the luminescence spectra with peculiar peaks which are related to the internal 4f-4f transitions of the rare earth atoms, (which are independent of the optical properties or the band structure of semiconductor). The rare earth doped III-V compound semiconductor systems are promising materials for a new type of optoelectronic devices and EL devices such as laser diode and light-emitting diode. The following results were obtained.1 Liquid-phase epitaxy (LPE)The Yb^<3+>-related luminescence around 1000nm was obtained through the PL or EL measurements from different Yb compounds as YbF_3,YbP in GaAs.For EL samples, the rare earth in GaAs can be excited by carrier injection.The Yb^<3+>-related emission of GaAs : YbF_3 and GaAs : YbP was relatively broad compared with InP : YbCl_3 because the Yb^<3+> forms complex centers with some defects or impurities in GaAs.2 Thermal diffusionThe Er^<3+>-related luminescence around 1540nm was obtained from the Er^<3+>ions in Si, and the photoluminescence excitation spectroscopy (PLE) spectra consisted of sharp peaks which were caused by the direct excitation of Er^<3+>ions.For InP : Er, Er^<3+>-related luminescence was not observed.3 Ion-implantationInP : Yb and Si ; Er showed intense rare-earth related emission compared with LPE and a thermal diffusion.For InP : Yb, when Yb^<3+>ion was excited by the photon energy below the InP-band-gap, Yb^<3+>-related emssion was strong because the new efficient energy transfer processes to Yb^<3+> ions occurred through the defect energy levels.

研究稀土掺杂III-V族化合物半导体和Si的光致发光（PL）和电致发光（EL）光谱，以明确液相外延（LPE）、热扩散3种方法制备的样品的发光机理和离子注入。我们观察到了具有特殊峰的发光光谱，这些峰与稀土原子内部4f-4f跃迁有关（与半导体的光学性质或能带结构无关）。稀土掺杂的III-V族化合物半导体体系是用于新型光电器件和EL器件（例如激光二极管和发光二极管）的有前途的材料。得到以下结果。 1液相外延(LPE)通过PL或EL测量不同Yb化合物(如GaAs中的YbF_3、YbP)，获得了1000nm附近的Yb^<3+>相关发光。对于EL样品， GaAs中的稀土可以通过载流子注入来激发。GaAs : YbF_3和GaAs : YbP的Yb^<3+>相关发射相对较宽与 InP : YbCl_3 相比，因为 Yb^<3+> 与 GaAs 中的一些缺陷或杂质形成复合中心。2 热扩散从 Si 中的 Er^<3+> 离子获得了 1540nm 附近的 Er^<3+> 相关发光，光致发光激发光谱（PLE）光谱由 Er^<3+> 离子直接激发引起的尖锐峰组成。对于 InP ：Er、Er^<3+> 相关3 离子注入InP：Yb和Si；未观察到发光。与LPE和热扩散相比，Er表现出强烈的稀土相关发射。对于InP：Yb，当Yb^<3+>离子被低于InP带隙的光子能量激发时，Yb^<3+>-相关发射很强，因为向 Yb^<3+> 离子的新的有效能量转移过程是通过缺陷能级发生的。