Electrochemical Synthesis of III-V (GaN, InN, GaSb, InSb, AlSb) and Metal Sulfide (ZnS, GaS) Compound Semiconductors and their Nanostructures from Ionic Liquids

离子液体电化学合成 III-V（GaN、InN、GaSb、InSb、AlSb）和金属硫化物（ZnS、GaS）化合物半导体及其纳米结构

• 批准号: 253322406
• 负责人: Privatdozentin Dr. Natalia Borisenko
• 金额: --
• 依托单位: Institut für Elektrochemie
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 财政年份: 2014
• 资助国家: 德国
• 起止时间: 2013-12-31 至 2021-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/253322406?language=en
• 关键词: Electrochemical; Synthesis; III; GaN; InN

This project is intended to develop III-V (GaN, InN, GaSb, InSb and AlSb) and metal sulfide (ZnS and GaS) compound semiconductor thin films and their nanostructures (nanotubes, nanowires and macroporous structures) by electrodeposition / electroless deposition in various ionic liquids near room temperature. The major focus will be to understand the mechanism of formation of these compound semiconductors. The reaction mechanism will be studied based on analysis of the IL-salt mixtures, electrode/electrolyte interface and the resulting deposits. The influence of the IL composition on the deposit morphology and optical properties will be investigated. Furthermore, the semiconductor nanostructures will be made both by template-assisted and template-free electrochemical synthesis that opens up a new way to synthesize semiconductor nanostructures near room temperature.

该项目旨在通过电沉积/无电沉积在各种领域开发III-V族（GaN、InN、GaSb、InSb和AlSb）和金属硫化物（ZnS和GaS）化合物半导体薄膜及其纳米结构（纳米管、纳米线和大孔结构）。离子液体接近室温。主要重点是了解这些化合物半导体的形成机制。将根据 IL-盐混合物、电极/电解质界面和所得沉积物的分析来研究反应机理。将研究离子液体成分对沉积物形态和光学性质的影响。此外，半导体纳米结构将通过模板辅助和无模板电化学合成来制备，这开辟了在室温附近合成半导体纳米结构的新方法。