Next generation Using GaInN Blue VCSEL for a light source of the DVD with a large capacity

下一代大容量DVD光源采用GaInN Blue VCSEL

• 批准号: 14550319
• 负责人: SAKAGUCHI Takahiro
• 金额: $ 2.18万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14550319/
• 关键词: GaInN Semiconductor; Blue Semiconductor Lasers; VCSELs; Current Structure; Multilayer Reflector; Epitaxy Lateral Over Growth

We present the design and fabrication of highly reflective and low loss multilayer dielectric mirrors (SiO_2/ZrO_2) for GaN based vertical cavity surface emitting lasers (VCSELs). We consider two types of VCSEL structures ; one consists of AlN/GaN vertical cavity structure with a cavity length of 1.9 μm has been demonstrated. The other consists of two dielectric mirrors (SiO_2/ZrO_2) with a polished thin sapphire substrate. A resonant emission forma photo-pumped GaInN/GaInN vertical cavity with a spectral line width of 3.8 nm has been demonstrated. Also, we propose a new structure using lateral growth on dielectric Mirrors as a bottom reflector. We have demonstrated and characterized the thin GaInN/GaN 10 MQWs fabricated by removing a sapphire substrate with UV light irradiation for making a micro-cavity structure. The PL properties of standing-alone QWs show no noticeable degradation of QWs after the removing process. We pointed out the importance of the flatness of removed interfaces.

我们为基于GAN的垂直腔表面发射激光器（VCSELS）的高度反射性和低损失多层饮食镜（SIO_2/ZRO_2）的设计和制造。我们考虑两种类型的VCSEL结构。一种由ALN/GAN垂直腔结构组成，腔长为1.9μm。另一个由两个饮食镜（SIO_2/ZRO_2）组成，带有抛光的蓝色蓝宝石底物。已经证明了光谱线宽度为3.8 nm的共振发射形式的光泵振幅增益/增益垂直腔。另外，我们提出了一种新的结构，该结构使用顽固镜上的横向生长作为底部反射器。我们已经证明并表征了通过拆下带有紫外线照射的蓝宝石底物来制造微型腔结构的蓝色Gainn/gan 10 MQW。站立QW的PL性质在去除过程后没有明显的QW降解。我们指出了去除接口的平坦度的重要性。

项目成果

S.Makino, T.Miyamoto, M.Ohta, T.Matsuura, Y.Matsui, F.Koyama: "Thermal annealing effect on self-assembled GaInNAs/GaAs quantum dots grown by chemical beam epitaxy"Physica Status Solidi. O(c)・4. 1097-1100 (2003)

S.Makino、T.Miyamoto、M.Ohta、T.Matsuura、Y.Matsui、F.Koyama：“化学束外延生长的自组装 GaInNAs/GaAs 量子点的热退火效应”Physica Status O(c) ）・4。1097-1100（2003）

坂口 孝浩, 桜井 康樹, 三浦 達, 小山 二三夫: "誘電体反射鏡を用いた中空光導波路の伝搬損失測定"2003年電子情報通信学会エレクトロニクスソサエティ大会. C-3-86. 219 (2003)

Takahiro Sakaguchi、Yasuki Sakurai、Tatsu Miura、Fumio Koyama：“使用介质反射器测量中空光波导的传播损耗”2003 IEICE 电子学会会议。

Takahiro Sakaguchi, Fumio Koyama, Kenichi Iga: "Fabrication and Characterization of Vertical Micro-Cavity Structures for GaN Surface Emitting Lasers"Journal of the Japanese Association for Crystal Growth. vol.29, No.3. 47-54 (2002)

Takahiro Sakaguchi、Fumio Koyama、Kenichi Iga：“GaN 表面发射激光器垂直微腔结构的制造和表征”日本晶体生长协会杂志。

T.Honda, K.Shimanuki, M.Akiyama, Y.Amahori, H.Kimura, H.Kawanishi: "Amorphous GaN-Based Electroluminescence Devices Operating in UV Spectral Region"Physics Status Solidi (c). vol.0, No.7. 2678-2681 (2003)

T.Honda、K.Shimanuki、M.Akiyama、Y.Amahori、H.Kimura、H.Kawanishi：“在紫外光谱区域运行的非晶 GaN 基电致发光器件”物理状态 Solidi (c)。

Tomoyuki Miyamoto, Fumio Koyama: "Progress of GaInNAs long wavelength lasers"The 2002 Int. Conf. on Solid State Devices and Materials. G-2-1. (2002)

Tomoyuki Miyamoto、Fumio Koyama：“GaInNAs 长波长激光器的进展”2002 年 Int.