Growth of nitride semiconductor quantum structures and their application for blue vertical-microcavity lasers

氮化物半导体量子结构的生长及其在蓝色垂直微腔激光器中的应用

• 批准号: 12650037
• 负责人: NISHIOKA Masao
• 金额: $ 2.3万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12650037/
• 关键词: nitride semiconductor; VCSELs; microcavity; ITO; 青紫色面発光レーザ; InGaN; 垂直微小共振器; 縦型微小共振器; 量子構造; 量子ドット構造; 量子ナノ構造; 高密度光メモリー; 青色レーザ; 有機金属気層成長

In this research, we established the fundamental technologies for realizing blue-violet vertical-cavity surface-emitting lasers (VCSELs).First, with precise control of growth conditions, electrically conductive n-DBRs with high reflectivity were successfully obtained. We also proposed n-AlGaN/n-GaN superlattice DBRs in which n-AlGaN/n-GaN superlattices are used instead of n-AlGaN quarter-wave layers in conventional DBRs. A 26-period DBR with this novel structure revealed to have reflectivity as high as 94.5%, and to be able to suppress cracking.Second, we utilized an indium tin oxide (ITO) transparent p-contact and achieved efficient injection of holes. Rapid thermal annealing under nitrogen ambient can improve optical transmittance and electrical conductivity of a sputtered ITO film simultaneously.Furthermore, we fabricated and demonstrated InGaN vertical microcavity light emitting diodes (LEDs) as a basic structure toward the current injected blue-violet VCSELs. The emission peak wid … More th of the fabricated device was 3.6 nm, while the emission directionality was rather improved than conventional LEDs. These optical characteristics showed that microcavity effects were actually occurred in these LEDs. In addition, series resistances of the LEDs could be reduced with the n-type superlattice DBR. These results are assumed to be breakthroughs to realize current injected blue VCSELs.On the other hand, we also demonstrated for the first time the enhancement of spontaneous emission coupling factor β in nitride-based vertical microcavity surface emitting laser at room temperature. From input-output measurements and analysis of the rate equations, the β of the lasing mode is estimated to be 1.6 × 10^<-2> by assuming the internal quantum efficiency η of 10% and the transparency carrier concentration of 1.0 × 10^<19>cm^<-3>. The estimated β can be well accounted for by a simple theoretical model. High quality microcavity can be fabricated with nitride semiconductors, which is very promising for further application such as single photon emitters. Less

在这项研究中，我们建立了实现蓝紫色垂直腔表面发射激光器（VCSELS）的基本技术。首先，通过精确控制生长条件，成功地获得了高反射率的电导性N-DBR。我们还提出了N-Algan/N-GAN超级晶格DBR，其中使用N-Algan/N-GAN超晶格代替常规DBR中的N-Algan四分之一波层。具有这种新型结构的26个周期DBR显示出高达94.5％的反射率，并且能够抑制开裂。第二，我们利用了二锡氧化锡（ITO）透明的P接触率并获得了有效的孔。在氮气环境下快速的热退火可以改善溅射ITO膜的光传递和电导率。简单地，我们制造并证明了Ingan垂直的微腔发光二极管（LED）作为倾向于当前注入的蓝色violet VCSEL的基本结构。发射峰值宽度…更多的制造设备为3.6 nm，而发射方向性比传统的LED相当改善。这些光学特征表明，这些LED实际上发生了微腔效应。此外，通过N型超晶格DBR可以降低LED的串联电阻。假定这些结果是实现当前注射的蓝色VCSEL的突破。另一方面，我们还首次证明了在室温下基于硝酸盐的垂直微腔表面发射激光器中赞助商发射耦合因子β的增强。从输入输出测量和速率方程的分析中，通过假设内部量子效率η为10％，透明载体浓度为1.0×10^<19> cm^<-3>，估计激光模式的β为1.6×10^<-2>。估计的β可以通过简单的理论模型很好地解释。高质量的微腔可以用氮化物半导体制造，这非常有望用于进一步的应用，例如单个光子发射器。较少的

项目成果

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Tatebayashi, J.: "Growth area control of InAs quantum dots for photonic crystal-based optical devices by selective MOCVD"Proc. SPIE-Int. Soc. Opt. Eng. (USA). vol.4283. 420-427 (2001)

Tatebayashi, J.：“通过选择性 MOCVD 控制基于光子晶体的光学器件的 InAs 量子点的生长面积”Proc。