EXCELLENT TEMPERATURE CHARACTERISTIC 1.2 μm SINGLE-MODE SEMICONDUCTOR LASERS AND ITS APPLICATION TO ULTRA-HIGH SPEED OPTICAL LINKS

优异的温度特性1.2μm单模半导体激光器及其在超高速光链路中的应用

• 批准号: 12355016
• 负责人: SAKAGUCHI Takahiro
• 金额: $ 22.02万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12355016/
• 关键词: 1.2 μm SINGLE-MODE SEMICONDUCTOR LASER; HIGH STRAINE STRUCTURE; SURFACE EMITTING LASER; EXCELLENT TEMPERATURE; HIGH SPEED OPTICAL LINK; 半導体レーザ; 光通信; 微小光学; 並列光情報処理; 光インターコネクト; 光集積回路

We realized the wavelength extension of GaInAs/GaAs strained quantum wells1) to open up a new wavelength band of 1.0-1.2 μm. We newly introduced a strained buffer layer and established growth conditions in MOCVD, enabling us to grow highly strained layers with a strain of over 2 %. The PL wavelength of grown GaInAa QWs could be extended to be over 1.2 μm without any degradation in crystal qualities.We fabricated 50 μm wide broad area lasers with 1.2 μm GaInAs QWs. The lowest threshold current density of broad area lasers is 170 A/cm2 for double QWs. Figure 3 shows various L/I curves at different heat sink temperatures up to 170 ℃. A characteristic temperature T0 under is over 200 K, which is the highest at 1.2〜1.3 μm wavelength band. Ridge waveguide devices can be operated under cw operation without bonding on heat-sink. Some devices under high injection showed a lasing wavelength beyond 1.25 μm, which is the longest wavelength ever reported for the GaInAs/GaAs system.We fabricated vertical cavity surface emitting lasers (VCSELs) with GaInAs. We achieved a threshold current of 0.9 mA, high-temperature operation of up to 170 ℃, and high reliability of 〉2000 hours. This device was grown on GaAs(311)B substrate, showing large orthogonal polarization suppression ratio (OPSR) of 30dB. We realized single longitudinal, fundamental transverse-mode and polarization in the VCSLE. The device shows an excellent temperature characteristics up to 180 ℃.We also demonstrated a multi-wavelength VCSEL array on a patterned substrate in a wavelength band of 1.1-1.2 μm. We carried out data transmission with 2.5 Gb/s x 4 channels was achieved.

我们意识到Gainas/gaas紧张的量子井的波长延伸1）开放了1.0-1.2μm的新波长带。我们新引入了紧张的缓冲层，并在MOCVD中确定了生长条件，从而使我们能够以超过2％的菌株生长高度应变的层。生长的GainaA QW的PL波长可以扩展到1.2μm以上，而不会降解任何晶体质量。我们制造了50μm宽的宽面积激光器，具有1.2μmGainas QW。对于双QW，宽面积激光器的最低阈值电流密度为170 A/CM2。图3显示了在不同的散热器温度下的各种L/I曲线，最高为170℃。特征温度T0以上的温度超过200 K，在1.2至1.3μm波长频带时最高。 Ridge波导设备可以在CW操作下操作，而无需在热水渠道上粘合。高注射下的一些设备显示出超过1.25μm的激光波长，这是Gainas/GaAS系统有史以来最长的波长。我们制造的垂直腔表面发射激光器（VCSELS）带有Gainas。我们达到了0.9 Ma的阈值电流，高温运行高达170℃，高可靠性为2000小时。该设备是在GAAS（311）B底物上生长的，显示了30dB的较大正交极化比（OPSR）。我们意识到VCSLE中的单个纵向，基本横向模式和极化。该设备显示出极好的温度特性，最高为180℃。我们还在波长1.1-1.2μm的波长带上显示了一个多波长的VCSEL阵列。我们实现了2.5 GB/s x 4通道的数据传输。

项目成果

Dietmar Schlenker: "Critical layer thickness of 1.2-μm highly strained GaInAs/GaAs quantum wells"J.Crystal Growth. 221. 503-508 (2000)

Dietmar Schlenker：“1.2μm 高应变 GaInAs/GaAs 量子阱的临界层厚度”J.Crystal Growth。221. 503-508 (2000)。

Nobuhiko Nishiyama: "Growth and optical properties of highly strained GaInAs/GaAs quantum wells on (311)B GaAs by MOCVD"J.Crystal Growth. 221. 530-534 (2000)

Nobuhiko Nishiyama：“通过 MOCVD 在 (311)B GaAs 上实现高应变 GaInAs/GaAs 量子阱的生长和光学特性”J.Crystal Growth。

Yasuhiko Aoki: "Collimation characteristics of planar microlens for parallel optical interconnect"Optical Review. 7/6. 483-485 (2000)

Yasuhiko Aoki：“用于并行光学互连的平面微透镜的准直特性”光学评论。

N.Nishiyama, M.Arai, S.Shinada, M.Azuchi, A.Matsutani, T.Miyamoto, F.Koyama, K.iga: "1.12 μm polarization controlled highly strained GaInAs vertical-cavity surface-emitting lasers on GaAs(311)B by metal organic chemical vapor deposition"Jpn. J. AppI. Phys

N.Nishiyama、M.Arai、S.Shinada、M.Azuchi、A.Matsutani、T.Miyamoto、F.Koyama、K.iga：“GaAs 上的 1.12 μm 偏振控制高应变 GaInAs 垂直腔表面发射激光器（ 311)B 通过金属有机化学气相沉积法“Jpn. J. AppI. Phys

Nobuhiko Nishiyama, Masakazu Aral, Satoshi Shinada, Munechika Azuchi, Akihiro Matsutani, Tomoyuki Miyamoto, Fumio Koyama, and Kenichi Iga: "1.12 μm polarization controlled highly strained GalnAs vertical- cavity surface-emitting lasers on GaAs(311)B by me

Nobuhiko Nishiyama、Masakazu Aral、Satoshi Shinada、Munechika Azuchi、Akihiro Matsutani、Tomoyuki Miyamoto、Fumio Koyama 和 Kenichi Iga：“我在 GaAs(311)B 上实现了 1.12 μm 偏振控制高应变 GalnAs 垂直腔表面发射激光器