Nonlinear Optical Metrology of Electronic Interfaces for Silicon Devices

硅器件电子接口的非线性光学计量

• 批准号: LP200300982
• 负责人: Dr Michael Nielsen
• 金额: $ 29.92万
• 依托单位: The University of New South Wales
• 依托单位国家: 澳大利亚
• 项目类别: Linkage Projects
• 财政年份: 2022
• 资助国家: 澳大利亚
• 起止时间: 2022-07-25 至 2025-07-24
• 项目状态: 未结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/LP200300982
• 关键词: Nonlinear; Optical; Metrology; Electronic; Interfaces

This project aims to develop a prototype electric field induced second harmonic generation metrology setup for studying thin film dielectric interfaces on silicon in partnership with Femtometrix. The quality of these silicon-dielectric interfaces, which are affected by trapped charges and defects, are critical for microelectronic and optoelectronic device manufacturing. Through several proposed methodologies to separate the effect of interface and bulk signals, it is expected that the sensitivity of the prototype setup will exceed the previous record of 1 kV/cm. This metrology technique will be further expanded for applicability to silicon photovoltaics, specifically passivating contacts which cannot be studied via conventional techniques.

该项目旨在开发一个原型电场引起的第二次谐波产生计量设置，用于与femtometrix合作研究硅的薄膜介电接口。这些硅丝接界面的质量受到捕获的电荷和缺陷的影响，对于微电子和光电设备制造至关重要。通过几种提出的方​​法来分开界面和散装信号的效果，预计原型设置的灵敏度将超过1 kV/cm的先前记录。该计量技术将进一步扩展，以适用于硅光伏，特别是通过传统技术研究的钝化接触。