Development of GHz-Drive Magnetic Thin Film Inductors for Integrated Circuits

用于集成电路的 GHz 驱动磁性薄膜电感器的开发

基本信息

批准号：
12305025
负责人：
YAMAGUCHI Masahiro
金额：
$ 28.44万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2002
项目状态：
已结题

项目摘要

A new GHz-band permeameter has been developed to find out the CoNbZr, FeAlO and (CoFeB)SiO_2 Thin-film materials as the possible candidates for GHz-drive inductors. A new technique on raise the ferromagnetic resonance (FMR) frequency has also been developed; Microfabricate narrow slits along the easy axis of magnetization and apply RE magnetic field along the hard axis. Then magnetic losses at 2GHz can be negligible through the optimum slit design method we established.An integrated spiral inductor with 0.1-1.0μm-thick silted CoNbZr film on the top exhibited L=8nH and Q=5 at 2GHz, Its size was 330x330μm^2. Provided that the silted CoNbZr magnetic film are installed below and on the spiral (sandwich type inductor), L=7.9nH and Q=13 has been achieved is the 200x400μm^2 size. This is worth achieving main objective of this work.An RE magnetic near field probe has been developed to analyze leakage flux from the integrated inductor to semiconductor circuit. The probe exhibited world-highest spatial resolution of 40μm at 1GHz. It is estimated that the electromagnetic interference to the integrated circuit would be negligible.An extensive application of integrated ferromagnetic film has been proposed to suppress RF in-line electromagnetic noise by means of FMR losses. Insertion loss at 1GHz was only 0.4dB while is reached 15dB as 20GHz.Thus this work has been concluded, showing a practical possibility of ferromagnetic integrated inductors as well as to pioneering a new technology field of "soft magnetic applications in the GHz range for IT." The first and second international symposium on "High Frequency Micromagnetic Devices and Materials" has been initiated by the investigators.

已经开发了一种新的GHz波段磁带，以找出Conbzr，Fealo和（COFEB）SIO_2薄膜材料作为GHz驱动诱导的可能的候选物。还开发了一种有关提高铁磁共振（FMR）频率的新技术。沿磁化的易于轴微制狭窄缝隙，并沿硬轴施加RE磁场。然后，通过我们确定的最佳缝隙设计方法可以忽略2GHz的磁损耗。在顶部用0.1-1.0μm-厚的淤积粘合胶片诱导的集成螺旋形，其大小为330x330μm^2。只要在下方和螺旋上安装了淤泥的Conbzr磁性膜（诱导的三明治型），L = 7.9NH和Q = 13是200x400μm^2尺寸。这是值得实现这项工作的主要目标的值得的。已经开发了磁性近探针来分析从诱导的综合诱导到半导体电路的泄漏通量。探头在1GHz处暴露于世界最大的40μm空间分辨率。据估计，对集成电路的电磁干扰可以忽略不计。已经提出，已经提出了综合铁磁膜的广泛应用来通过FMR损耗来抑制RF内线电磁噪声。 1GHz处的插入损失仅为0.4dB，而15dB的插入损失为20GHz。这项工作已经结束，显示了铁磁综合诱导的诱导以及开创“ GHz范围内软磁应用”的新技术领域的实际可能性。研究人员发起了关于“高频微型设备和材料”的第一和第二国际研讨会。