Study on (110)-QW Lasers with Low Threshold Current Density

低阈值电流密度(110)-QW激光器的研究

基本信息

批准号：
11650346
负责人：
OE Kunishige
金额：
$ 0.64万
依托单位：
Kyoto Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11650346/
关键词：
semiconductor laser quantum well optical communication (110) face dry etching GalnAsP Ga In As GaInAs

项目摘要

Threshold current densities of (110)-QW lasers were investigated for wide stripes aligned in the [001] and [110] directions from the same wafer. As there is no cleaved facets for lasers along [001] direction, the mirror facets were formed parallel to the (001) face by reactive-ion-etching (RIE) using BBr_3gas. The threshold current densities of the lasers aligned in the [001] direction are found to be much smaller than those aligned in the [110] direction. This strong anisotropy in J_<th> is believed to come from the stronger oscillator strength in the [001] direction cavity and will be very useful to control polrization of laser output from surface emitting lasers (SELs) if the (110) QW structure is used for the SELs. Fairly low threshold current densities of less than 0.6 KA/cm2 were obtained for the lasers with cavities along [001] direction in spite of the lower reflectivity of the RIE-etched mirror surface. With improved mirror reflectivity of the dry-etched (001) face, lower threshold current density will be obtained for the (110)-oriented GaInAs (P) QW lasers.The results in this research show the expected advantage of the (110) lasers along [001] cavity direction and suggests an advantage of the (110) QW structure in the application for long wavelength surface emitting lasers. This research might be very useful for the development of long wavelength vertical cavity surface emitting lasers, as the lasers need more optical gain to compensate their low reflectance of the cavity mirrors and polarization control of the emitting light.

研究了 (110)-QW 激光器在同一晶圆上沿 [001] 和 [110] 方向排列的宽条纹的阈值电流密度。由于沿[001]方向的激光没有解理面，因此使用BBr_3气体通过反应离子蚀刻（RIE）形成平行于（001）面的镜面。发现沿[001]方向排列的激光器的阈值电流密度比沿[110]方向排列的激光器小得多。 J_<th> 中的这种强各向异性被认为来自 [001] 方向腔中更强的振荡器强度，并且如果 (110) QW 结构为用于 SEL。尽管RIE蚀刻镜面的反射率较低，但对于沿[001]方向具有腔的激光器，获得了低于0.6 KA/cm2的相当低的阈值电流密度。随着干蚀刻（001）面镜面反射率的提高，（110）取向的GaInAs（P）QW激光器将获得更低的阈值电流密度。本研究的结果显示了（110）激光器的预期优势沿着[001]腔方向，并提出了（110）QW结构在长波长表面发射激光器应用中的优势。这项研究对于长波长垂直腔表面发射激光器的开发可能非常有用，因为激光器需要更多的光学增益来补偿腔镜的低反射率和发射光的偏振控制。