Research on GaInAAs semiconductor alloy for temperature-insensitive wavelength semiconductor lasers

温度不敏感波长半导体激光器用GaInAAs半导体合金的研究

基本信息

批准号：
17360140
负责人：
OE Kunishige
金额：
$ 9.47万
依托单位：
Kyoto Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2007
项目状态：
已结题

项目摘要

Research of laser diodes whose wavelength do not fluctuate with ambient temperature variation is performed. A new semiconductor GaNAsBi alloy which has been created by our laboratory, was grown on n-GaAs substrate by molecular beam epitaxy (MBE) using solid Ga, Bi, As sources and nitrogen radicals generated from N_2 gas in rf plasma. The temperature dependency of its energy band is shown to be very small, 0.16meV/K, which is confirmed by photoluminescence (PL) measurement. The PL optical output from a GaNAsBi layer, which has two cleaved facets for Fabry-Perot cavity, was measured as a function of excitation optical power using 0.98μm pump laser as an excitation light source. Nonlinear increase in PL intensity has been observed at 100K by 400mW pump laser intensity. As excitation optical power of pump laser is limited, lasing was-not confirmed. To measure electroluminescence(EL) characteristics of GaNAsBi diodes, GaNAsBi/GaAs double-heterostructure (DH) was also grown by MBE. SiO_2 stripe laser structure was fabricated using conventional processing technique and sputtered SiO_2 film. The EL of the DH diodes was measured under pulse current condition at several temperatures using cryostat. The temperature dependence of the EL peak energy of the DH diodes was 0.09 nm/K in the temperature range of 100- 300K, much smaller than the temperature dependence of EL emission from GaInAsP/ InP DH diodes. The temperature dependence of the absorption edge is also measured and shown to be about 0.2 meV/K in the temperature range of 193-300K. This temperature-insensitive wavelength absorption characteristics of GaN_yAs_<1xy>Bi_x/GaAs DH diodes is also applicable to semiconductor optical modulator.Based on the research, a new semiconductor laser with small wavelength fluctuation with temperature variation might be obtainable by improving GaNAsBi alloy quality and laser processing technology.

对波长的激光二极管的研究不会随环境温度变化而波动。我们实验室创建的一种新的半导体Ganasbi合金是通过分子束外延（MBE）在N-GAAS底物上生长的，它是使用固体GA，作为RF等离子体中N_2气体产生的源和氮自由基。其能带的温度依赖性显示为非常小的0.16mev/k，这是通过光子性（PL）测量确认的。 GANASBI层的PL光学输出具有两个用于Fabry-Perot腔的裂解刻面，是使用0.98μm泵激光作为令人兴奋的光源来测量的。在100K乘400MW泵激光强度时，已经观察到PL强度的非线性增加。由于泵激光的令人兴奋的光学功率受到限制，因此MBE也生长了GANASBI二极管，GANASBI/GAAS双聚结构（DH）的激光（EL）特性。 SIO_2条纹激光结构是使用常规处理技术和溅射的SIO_2膜制造的。使用低温恒温器在几个温度下在脉冲电流条件下测量DH二极管的EL。 DH语音的EL峰值能量的温度依赖性在100-300K的温度范围内为0.09 nm/ k，比GainASP/ INP DH语音的EL发射的温度依赖性小得多。还测量了抽象边缘的温度依赖性，并显示在193-300K的温度范围内约为0.2 meV/k。 GAN_YAS__ <1XY> BI_X/GAAS DH语音的这种不敏感的波长吸收特性也适用于半导体光学调节仪。基于研究，这是一种新的半导体激光器，具有较小的波长波长，可以通过改进ganasbi Alloy Quality质量和Laserery Quancyers Consection Consection和Lasersering技术来获得温度变化的小型波长波动。