Study on New Semiconductors for Temperature-insensitive Wavelength Semiconductor Lasers

温度不敏感波长半导体激光器新型半导体的研究

• 批准号: 11555087
• 负责人: OE Kunishige
• 金额: $ 8.77万
• 依托单位: Kyoto Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11555087/
• 关键词: temperature-insensitive; GaAsBi alloy; Bi-containing semiconductor; semiconductor laser; metastable; MOVPE growth

A new semiconductor material consisting of semiconductor and semimetal which has a temperature-insensitive band gap has been studied to develop a semiconductor laser whose wavelength does not change when the ambient temperature Changes. The detailed growth conditions and the characteristics of GaAs_<1-x>Bi_x semiconductor alloy layers have been studied. The lattice constants of the alloy were found to increase with the addition of Bi. The uniformity and the reproducibility of the solid composition of the GaAs_<1-x>Bi_x epilayers are good in spite of the difficulty of epitaxial growth. Although layer growth was performed at a low temperature, the stability of GaAs_<1-x>Bi_x alloy was sufficient for device processing. The photoluminescence (PL) spectra show that the PL peak energy of the GaAs_<1-x>Bi_x alloy shifts to a longer wavelength with increasing Bi content. The temperature dependence of the PL peak energy is much weaker than the temperature variation of the band gap of GaAs. The results obtained in this research support the hypothesis that III-V alloy semiconductors consisting of semiconductor and semimetal components have a temperature-insensitive band gap.To create a semiconductor material of optical fiber communication wavelength, GaInAsBi alloy has been targetted. The epitaxial growth of GaInAs, the host crystal of the alloy, was examined at low temperatures. Using new method, GaInAs layers of good optical quality were grown even at 420 C. However the growth temperature could not be lowered any further even using a new Ga precursor, TiPGa. New precursors of Ga and In which enable the growth of GaInAs at 365 C are expected, which will allow the growth of the new GaInAsBi alloy.

已经研究了一种新的半导体材料，该半导体材料由半导体和半学材料组成，该材料具有温度无敏感的带隙，以开发一种半导体激光器，当环境温度变化时，其波长不会改变。已经研究了GAAS_ <1-X> BI_X半导体合金层的详细生长条件和特征。发现合金的晶格常数随着BI的添加而增加。尽管外在生长的困难，GAAS_ <1-X> BI_X表层的固体组成的均匀性和可重复性是良好的。尽管在低温下进行层增长，但GAAS_ <1-X> BI_X合金的稳定性足以用于设备处理。光致发光（PL）光谱表明，随着BI含量的增加，GAAS_ <1-X> BI_X合金的PL峰值转移到更长的波长。 PL峰值能的温度依赖性比GAA的带隙的温度变化要弱得多。在这项研究中获得的结果支持以下假设：由半导体和半学成分组成的III-V合金半导体具有温度不敏感的带隙。为了创建光纤通信波长的半导体材料，GainAsbi合金已被靶向。在低温下检查了Gainas（合金的宿主晶体）的外延生长。使用新方法，即使在420 C下，也可以使用良好的光学质量的Gainas层增长。但是，即使使用新的GA前体Tipga，也无法进一步降低生长温度。 GA的新先驱，其中预期在365 C时可以增长Gainas的增长，这将允许新的Gainasbi合金的生长。

项目成果

H.OFUCHI, T.KUBO, M.TABUCHI, Y.TAKEDA, H.OKAMOTO, and R.OE: "Fluorescence EXAFS study on local structures around Bi atoms in InAsBi grown by low-pressure MOVPE"Jpn. J. Appl. Phys.. Vol. 38, Suppl. 38-1. 545-547 (1999)

H.OFUCHI、T.KUBO、M.TABUCHI、Y.TAKEDA、H.OKAMOTO 和 R.OE：“低压 MOVPE 生长的 InAsBi 中 Bi 原子周围局部结构的荧光 EXAFS 研究”Jpn。

K.Oe: "Metalorganic Vapor Phase Epitaxial Growth of Metastable GaAs_<1->Bix Alloy"J. Crystal Growth. (印刷中).

K.Oe：“亚稳态 GaAs_<1->Bix 合金的金属有机气相外延生长”J。

K. OE: "Metalorganic Vapor Phase Epitaxial Growth of Metastable GaAsBi Alloy"Abstract of 13th International Conference on InP and Related Materials, Nara, May. 227 (2001)

K. OE：“亚稳态 GaAsBi 合金的金属有机气相外延生长”第 13 届 InP 及相关材料国际会议摘要，奈良，5 月。

K.Oe: "Characteristics of Semiconductor Alloy GaAsBi"Jpn. J. Appl. Phys.. (印刷中).

K.Oe：“半导体合金 GaAsBi 的特性”J. Appl.（出版中）。

K.Oe: "Optical Characteristics of New Semiconductor Alloy ; GaAs_<1-χ>Bi_χ"Proc.2000 IEEE Annual Meeting Conference. 788-789 (2000)

K.Oe：“新型半导体合金的光学特性；GaAs_<1-χ>Bi_χ”Proc.2000 IEEE 年会 788-789 (2000)。