DEVELOPMENT OF THE HIGH REPETITIVE IMPULSE VOLTAGE GENERATOR USING SEMICONDUCTOR SWITCHES

半导体开关高重复脉冲电压发生器的研制

基本信息

批准号：
10650270
负责人：
MAEYAMA Mitsuaki
金额：
$ 1.66万
依托单位：
SAITAMA UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650270/
关键词：
pulse power generator high repetitiveness impulse generator static IG semiconductor switch L-C resonant charging Marx generator パルスパワー高繰返し動作サイリスタ高速充電 Zルクス回路高繰返し

项目摘要

In this research, we have developed high repetitive impulse voltage generator using semiconductor switches(static IG). Obtained results are as followed :・Proposal of a very high speed and efficient IG charging system.Replacing charging resistances to diodes, we developed low impedance charging system where the resistance component of its impedance is zero in principle and a simple gate system, which enables successive trigger operations for second and above switches, can be applied.Next, using this low impedance property, we adopted the L-C resonant charging method to this IG where we use IGBT switch as an injection switch of the charging system.As a results, in the experiment of 5 stage static IG where C of each stage is 0.1μF and L=500μH, the high speed charging property(charging period 50μs) of our system can be demonstrated.・Proposal of the improved successive gate circuit system.The gate circuit for second and above thristors are composed of 1) voltage source charging section, 2) voltage transform section to generate trigger signal, and 3) output section supplying voltage-current pulse to thristers.A voltage source of capacitor 0.1μF of each gate are charged simultaneously with each stage capacitor of IG through anode-cathode voltage of thristor. And, this gate are guaranteed to operate normally in any case of trigger controlsThis gate circuit is triggered by the anode-cathode voltage increment of thrister. So, there is no need of additional trigger signal system to second and above thrister. Furthermore, in case of using high speed charging system mentioned above, we proposed a novel gate circuit system which make it easier to calibrate its parameters.Using this high speed charging system and improved gate circuit, 4.5kHz repetitive operation (5 stage static IG), and output voltage of 11.8 times of charging DC voltage (20 stage static IG) are achieved experimentally.

在这项研究中，我们开发了使用半导体开关（静态IG）的高重复脉冲电压发生器，获得的结果如下：・提出了一种非常高速和高效的IG充电系统。我们开发了低阻抗充电，取代了二极管的充电电阻。原则上，其阻抗的电阻分量为零的系统和简单的门系统，可以实现第二个及以上开关的连续触发操作。接下来，利用这种低阻抗特性，我们采用了L-C对该IG采用谐振充电方法，我们使用IGBT开关作为充电系统的注入开关。结果，在每级C为0.1μF、L=500μH的5级静态IG的实验中，高速充电特性可以演示我们的系统（充电周期50μs）。・改进的连续门电路系统的提案。第二个及以上晶闸管的门电路由1）电压源充电部分组成， 2）电压变换部分产生触发信号，3）输出部分向晶闸管提供电压-电流脉冲。每个栅极0.1μF电容器的电压源通过晶闸管的阳极-阴极电压同时对IG的各级电容器充电。并且，在任何触发控制的情况下，都保证该门电路正常工作。该门电路由晶闸管的阳极-阴极电压增量触发，因此不需要额外的第二触发信号系统。此外，在使用上述高速充电系统的情况下，我们提出了一种新颖的门电路系统，使其更容易校准其参数。使用这种高速充电系统和改进的门电路，4.5kHz重复操作（5）实验实现了充电直流电压（20级静态IG）的11.8倍输出电压。