Surface Structure and State Analysis by Using Anble-resolved Photo-electron Diffraction

使用安布尔分辨光电子衍射进行表面结构和状态分析

基本信息

批准号：
08455026
负责人：
KOSHIKAWA Takanori
金额：
$ 4.35万
依托单位：
Osaka Electro-Communication University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455026/
关键词：
photoelectron diffraction hydroden terminated silicon surface Cu Si crystal growth high resolution depth analysis 表面構造シリコン(111)水素終端

项目摘要

High resolution analyzer for photo-electron diffraction analysis which have an ability to study the surface structure and state was designed and made. It was applied to the research of surface structure analysis and the thin film formation process.It the design of the analyzer, the trajectories of electrons in the analyzer including the edge effect of electrodes were simulated by the computer and the best values of the shape of the analyzer was obtained. The best angle of the analyzer is not 90ﾟ but 89.1ﾟ. The analyzer was made by using of the above value. The results of the exmeriments show that energy resolution is 4.2x10^<-3>. It value is almost comparable of the designed one. The angle resolution was 0.5ﾟ which was also comparable to the designed one. The following is the results which were obtained by using the above mentioned equipment.Thin film formation of Cu on the hydrogen-terminated silicon surfaces was investigated. Cu atoms can migrate very easily on the hydrogenterminated silicon surfaces when the sample temperature is kept between 300 and 400ﾟ. Its migration distance is quite long like 20-30 um. After the long migration of Cu atoms, these atoms form islands whose size is almost 20nm and these size is almost same. It predicts that these ilands could be used quntum dots for the devices. This type of method might be new techniques for the dot formation.The very complicated surface structure Cu/Si (111) "5x5" incommensurate structure was analyzed and obtained the detailed distance of each layr of Cu ans Si. This is alos new result.

高分辨率分析仪用于光电分析，将研究表面结构和状态的蜂蜜能力应用于表面结构分析和薄膜形成过程。包括边缘的iNalyzer通过获得的最佳值模拟了Afe afe afe afe afe aa aa nalyzer。 ^<-3>通过上述染色为0.5。 300和400 cu迁移的距离是20-30 u。分析了非常复杂的表面结构Cu/si ure，并获得了每个Cu Ans Si的详细距离。