Joint Research on Dynamic Characterization of Nanostructure

纳米结构动态表征联合研究

基本信息

批准号：
10044184
负责人：
KOSHIKAWA Takanori
金额：
$ 1.34万
依托单位：
Osaka Electro-Communication University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C).
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

项目摘要

In the present research, the nanostructure formation processes on silicon surfaces was controlled by using hydrogen and the details of these processes were dynamically observed. The detailed observation was carried out by using a low energy electron microscope (LEEM) which was set up in the lab. Of Prof. Bauer who is the first pioneer of developing it in the world. The big advantage of the new equipment is to be able to observe the dynamic surface phenomena in real time. The experiment was mainly performed by the younger researcher, Yasue, at Arizona State University and the analysis of these images was mainly done by Koshikawa and Bauer.2 dimensional (2D), incommensurate and tiny clusters of Cu and be formed at the step edge, the domain boundary and on the terrace of Si(111)7x7 when the substrate temperature was kept at around 300-400 degree C (low temperature). The number density of Cu clusters depends on the substrate temperature and the coverage of Cu. At high temperature (600 degr … More ee C), these 2D clusters can form only at the step edge due to the high diffusion coefficient. Cu atoms can easily migrate on the silicon surface, trapped at the step edge and form clusters. Here the hydrogen terminated surface was used to control the migration distance of Cu on silicon(111) and 3D nanostructures were tried to be made. The 3D nanostructures (the size : 20-60 nm) were formed at the step edge, the domain boundary and on the terrace on the substrate of 360-380 degree C. The number density of nanostructures on the terrace depends on the substrate temperature and the coverage. At around 450 degree C, the desorption of hydrogen start and the formation processes of Cu clusters were almost same of those of clean Si(111) surfaces. These detailed dynamic observation was carried out by using LEEM with high ability of the dynamic observation and some important results were obtained. In the present research, the cluster size and its position of Cu on SI(111) could be clarified to be controlled and this process could be applied to the different materials. Less

在本研究中，通过使用氢来控制硅表面上的纳米结构形成过程，并动态观察到这些过程的细节。使用在实验室中建立的低能电子显微镜（LEEM）进行详细的观察。鲍尔教授是世界上开发它的第一位先驱。新设备的最大优势是能够实时观察动态表面现象。实验主要由年轻的研究人员Yasue在亚利桑那州立大学进行，这些图像的分析主要由Koshikawa和Bauer进行。2维度（2D），Cu的不稳定和微小的cu和微小的插口，并在域边缘，域边界以及Sii tem 00 x 00 x 00 x 00 x 00 x 00 cul aft the sep endece and the temain norderiage teprace tem 00 x 00时。 Cu簇的数量密度取决于底物温度和CU的覆盖率。在高温（600 degr…更多ee c）下，由于高扩散系数，这些2D簇只能在阶跃边缘形成。 Cu原子可以很容易地在硅表面迁移，被困在阶梯边缘并形成簇。这里使用氢终止表面来控制Cu在硅上的迁移距离（111），并尝试制造3D纳米结构。 3D纳米结构（尺寸：20-60 nm）是在360-380度的基板上的阶梯边缘，域边界和露台上形成的。台面上纳米结构的数量密度取决于底物温度和覆盖范围。在大约450摄氏度的C下，氢开始的解吸和Cu簇的形成过程在干净的Si（111）表面几乎相同。这些详细的动态观察是通过使用LEEM具有高能力的动态观察能力进行的，并获得了一些重要的结果。在本研究中，可以澄清以控制SI（111）的簇大小及其位置，并且可以将该过程应用于不同的材料。较少的