Joint Research on Dynamic Characterization of Nanostructure

纳米结构动态表征联合研究

基本信息

批准号：
10044184
负责人：
KOSHIKAWA Takanori
金额：
$ 1.34万
依托单位：
Osaka Electro-Communication University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C).
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

项目摘要

In the present research, the nanostructure formation processes on silicon surfaces was controlled by using hydrogen and the details of these processes were dynamically observed. The detailed observation was carried out by using a low energy electron microscope (LEEM) which was set up in the lab. Of Prof. Bauer who is the first pioneer of developing it in the world. The big advantage of the new equipment is to be able to observe the dynamic surface phenomena in real time. The experiment was mainly performed by the younger researcher, Yasue, at Arizona State University and the analysis of these images was mainly done by Koshikawa and Bauer.2 dimensional (2D), incommensurate and tiny clusters of Cu and be formed at the step edge, the domain boundary and on the terrace of Si(111)7x7 when the substrate temperature was kept at around 300-400 degree C (low temperature). The number density of Cu clusters depends on the substrate temperature and the coverage of Cu. At high temperature (600 degr … More ee C), these 2D clusters can form only at the step edge due to the high diffusion coefficient. Cu atoms can easily migrate on the silicon surface, trapped at the step edge and form clusters. Here the hydrogen terminated surface was used to control the migration distance of Cu on silicon(111) and 3D nanostructures were tried to be made. The 3D nanostructures (the size : 20-60 nm) were formed at the step edge, the domain boundary and on the terrace on the substrate of 360-380 degree C. The number density of nanostructures on the terrace depends on the substrate temperature and the coverage. At around 450 degree C, the desorption of hydrogen start and the formation processes of Cu clusters were almost same of those of clean Si(111) surfaces. These detailed dynamic observation was carried out by using LEEM with high ability of the dynamic observation and some important results were obtained. In the present research, the cluster size and its position of Cu on SI(111) could be clarified to be controlled and this process could be applied to the different materials. Less

在本研究中，通过使用氢来控制硅表面纳米结构的形成过程，并使用实验室设置的低能电子显微镜（LEEM）动态观察这些过程的细节。 Bauer教授是世界上第一个开发它的人，新设备的一大优点是能够实时观察动态表面现象，该实验主要由年轻的研究员Yasue进行。亚利桑那州立大学对这些图像的分析是主要由 Koshikawa 和 Bauer 完成。当衬底温度保持在 300 左右时，在 Si(111)7x7 的台阶边缘、域边界和平台上形成二维（2D）、不相称的微小 Cu 团簇。 400 摄氏度（低温）。Cu 团簇的数量密度取决于基材温度和 Cu 的覆盖范围。在高温（600 摄氏度）下，这些 2D 团簇会形成。由于高扩散系数，只能在台阶边缘形成，Cu原子很容易在硅表面迁移，被捕获在台阶边缘并形成簇，这里使用氢终止表面来控制Cu在硅上的迁移距离。 111）和3D纳米结构（尺寸：20-60 nm）尝试在360-380摄氏度的基板上的台阶边缘、域边界和平台上形成。平台上纳米结构的密度数量取决于基底温度和覆盖度，在 450 摄氏度左右，氢的解吸开始和 Cu 团簇的形成过程与干净的 Si(111) 表面几乎相同。利用具有高动态观测能力的LEEM进行了观测，并取得了一些重要成果，本研究可以阐明Cu在SI(111)上的团簇尺寸及其位置，并可以控制这一过程。应用于不同的材料。