Studies on surface reaction process and thin film formation by controlling radicals

自由基控制表面反应过程及薄膜形成研究

基本信息

批准号：
08405005
负责人：
GOTO Toshio
金额：
$ 21.95万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08405005/
关键词：
Plasma Chemical vapor deposition Radical Poly crystalline Silicon Amorphous Silicon Absorption spectroscopy Process Diamond 赤外半導体レーザ吸収分光法 FT-IR 赤外半導体レーザー吸収分光法 FT-IRRAS

项目摘要

In this project, firstly we investigated systematically the correlation between the crystallinity of the deposited films and the information of gas phase in ECR plasma using silane / hydrogen mixture gases. As a result, we found that the reduction of ion flux contributed to the improvement of the crystallinity. On the basis of this result, we developed a novel method for depositing films without ionic species, namely, only neutral species using permanent magnets. Using this method, we have successfully synthesized the polycrystalline films with high crystallinty and smooth surfase. However, the deposition rate was reduced to be a tenth of that using the conventional method. To solve this problem, we have tried a novel two step growth method. In the method, ionic species were removed at the initial growth stage by using permanent magnets. After this step, the permanent magnets were removed from the plasma, the films were deposited by using the conventional ECR silane/hydrogen plasma., n … More amely including ionic and neutral species. As a result, we have successfully synthesized the films with high crystallinity, smooth surface and relatively high deposition rate. Moreover, we have found that ionic species disturb the nucleation of the crystalline phase especially.In a diamond formation process, we have clarified the role of radicals from the correlation between the film quality and the behaviors of the radicals using vacuum ultraviolet absorption spectroscopy and optical emission spectroscopy. As a result, carbon atom contributes to the formation of non-diamond phase while OH radical promotes the abstraction reaction of hydrogen atom terminating the diamond surface.In this project from 1996 to 1998, we have successfully obtained important findings by elucidating the roles in the polycrystalline silicon and diamond film formation processes. Moreover, on the basis of the findings, we have successfully developed the methods promising to obtain the films with further better quality by controlling the radicals. Less

在这个项目中，首先，我们使用硅烷 /氢混合物气体系统地研究了沉积膜结晶度与ECR血浆中气相的信息之间的相关性。结果，我们发现离子通量的减少有助于改善结晶度。在此结果的基础上，我们开发了一种新的方法来沉积没有离子物种的膜，即仅使用永久磁铁的中性物种。使用这种方法，我们成功地合成了具有高结晶和光滑表面的多晶膜。但是，使用常规方法将沉积率降低为十分之一。为了解决这个问题，我们尝试了一种新颖的两步增长方法。在该方法中，使用永久磁铁在初始生长阶段去除离子物种。在此步骤之后，将永久磁体从等离子体中取出，使用常规的ECR硅烷/氢等离子体。，N…更多，包括离子和中性物种。结果，我们成功地合成了高结晶度，光滑表面和相对较高的沉积速率的膜。此外，我们发现离子物种特别扰乱了晶体相的成核。在钻石形成过程中，我们通过使用真空紫外线抽象的光谱和光学发射光谱法阐明了从膜质量与自由基行为之间的相关性来阐明自由基的作用。结果，碳原子有助于形成非二叉子岩相，而OH激素促进了终止钻石表面的氢原子的抽象反应。在1996年至1998年的该项目中，我们通过阐明了在多晶硅和钻石膜形成过程中的作用，成功地获得了重要发现。此外，根据调查结果，我们成功地开发了有望通过控制激进分子以更高质量获得薄膜的方法。较少的