Studies on surface reaction process and thin film formation by controlling radicals

自由基控制表面反应过程及薄膜形成研究

基本信息

批准号：
08405005
负责人：
GOTO Toshio
金额：
$ 21.95万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08405005/
关键词：
Plasma Chemical vapor deposition Radical Poly crystalline Silicon Amorphous Silicon Absorption spectroscopy Process Diamond 赤外半導体レーザ吸収分光法 FT-IR 赤外半導体レーザー吸収分光法 FT-IRRAS

项目摘要

In this project, firstly we investigated systematically the correlation between the crystallinity of the deposited films and the information of gas phase in ECR plasma using silane / hydrogen mixture gases. As a result, we found that the reduction of ion flux contributed to the improvement of the crystallinity. On the basis of this result, we developed a novel method for depositing films without ionic species, namely, only neutral species using permanent magnets. Using this method, we have successfully synthesized the polycrystalline films with high crystallinty and smooth surfase. However, the deposition rate was reduced to be a tenth of that using the conventional method. To solve this problem, we have tried a novel two step growth method. In the method, ionic species were removed at the initial growth stage by using permanent magnets. After this step, the permanent magnets were removed from the plasma, the films were deposited by using the conventional ECR silane/hydrogen plasma., n … More amely including ionic and neutral species. As a result, we have successfully synthesized the films with high crystallinity, smooth surface and relatively high deposition rate. Moreover, we have found that ionic species disturb the nucleation of the crystalline phase especially.In a diamond formation process, we have clarified the role of radicals from the correlation between the film quality and the behaviors of the radicals using vacuum ultraviolet absorption spectroscopy and optical emission spectroscopy. As a result, carbon atom contributes to the formation of non-diamond phase while OH radical promotes the abstraction reaction of hydrogen atom terminating the diamond surface.In this project from 1996 to 1998, we have successfully obtained important findings by elucidating the roles in the polycrystalline silicon and diamond film formation processes. Moreover, on the basis of the findings, we have successfully developed the methods promising to obtain the films with further better quality by controlling the radicals. Less

在这个项目中，我们首先使用硅烷/氢气混合气体研究了沉积薄膜的结晶度与ECR等离子体中气相信息之间的相关性，结果发现离子通量的减少有助于提高性能。在此结果的基础上，我们开发了一种使用永磁体沉积无离子物质（即仅中性物质）的薄膜的新方法，我们成功地合成了具有高结晶度的多晶薄膜。然而，沉积率降低到传统方法的十分之一，为了解决这个问题，我们尝试了一种新颖的两步生长方法，在该方法中，离子物质在生长的初始阶段被去除。在此步骤之后，将永磁体从等离子体中永久去除，并使用传统的 ECR 硅烷/氢等离子体沉积薄膜。结果，我们成功地包括离子和中性物质。合成了薄膜高结晶度、光滑的表面和相对较高的沉积速率，我们发现离子物质特别干扰晶相的成核。在金刚石形成过程中，我们从薄膜质量和沉积物之间的相关性阐明了自由基的作用。使用真空紫外吸收光谱和光学发射光谱观察自由基的行为结果，碳原子有助于非金刚石相的形成，而OH自由基则促进氢原子的夺取反应，终止氢原子。在1996年至1998年的这个项目中，我们通过阐明多晶硅和金刚石薄膜形成过程中的作用，成功地获得了重要的发现，而且，在这些发现的基础上，我们成功地开发了有望获得金刚石表面的方法。通过控制更少的自由基，可以进一步提高薄膜的质量。