HF vapor etching machine

高频气相蚀刻机

• 批准号: 527538686
• 金额: --
• 依托单位: Technische Universität München (TUM)
• 依托单位国家: 德国
• 项目类别: Major Research Instrumentation
• 财政年份: 2023
• 资助国家: 德国
• 起止时间: 2022-12-31 至 无数据
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/527538686?language=en
• 关键词: HF; vapor; etching; machine

The fabrication of nanostructures plays a central role in the investigation of novel quantum technologies, especially in the realization of systems for quantum information processing and quantum sensors. In this context, it is often necessary to remove silicon dioxide and/or silicon nitride from samples without damaging other structures (e.g., made of silicon, gold, copper, silicon carbide, or silicon nitride). This can be achieved by chemical etching in hydrofluoric acid (HF). However, the use of liquid HF has significant disadvantages: On the one hand, the selectivity towards frequently used sample materials is low and cannot be adjusted. On the other hand, forces due to surface tension occur during removal of the sample from the acid and during subsequent drying, which often destroy larger nanostructures and thus make their fabrication impossible. These two crucial disadvantages can be avoided if HF vapor is used instead of liquid acid. In the porposed device, HF is not only vaporized in a controlled manner, but in addition, precise control of the etch rate and selectivity over other sample materials is achieved by precisely controlling the temperature, pressure and composition of the process gases. In addition, there are other advantages: The risk of sample contamination from suspended particles in solution is reduced, which significantly improves the yield for larger nanostructures. In addition, safety is increased because handling liquid HF acid and the significant health risks associated with it are avoided. Finally, an oxide-free surface termination with hydrogen atoms remains on silicon samples for several minutes, which is required for further process steps (e.g. ALD, CVD, MBE). In summary, the use of an RF vapor etching device, such as the one targeted by this proposal, will provide significant advantages in the fabrication of nanostructured quantum systems and materials. For this reason, corresponding devices are currently facing a high international demand. Purchasing of a corresponding machine would ensure that the Garching campus remains internationally competitive in the production of complex nanostructures.

纳米结构的制造在研究新型量子技术的研究中起着核心作用，尤其是在实现用于量子信息处理和量子传感器的系统中。在这种情况下，通常有必要从样品中去除二氧化硅和/或氮化硅，而不会损害其他结构（例如，由硅，金，铜，碳化硅或硝酸硅制成）。这可以通过在氢氟酸（HF）中化学蚀刻来实现。但是，液体HF的使用具有明显的缺点：一方面，对常用样品材料的选择性很低，无法调整。另一方面，由于表面张力引起的力在从酸中去除样品和随后的干燥期间会出现力，这通常会破坏较大的纳米结构，从而使它们的制造不可能。如果使用HF蒸气代替液态酸，则可以避免这两个关键缺点。在孔孔设备中，HF不仅以受控方式蒸发，而且还通过精确控制工艺气体的温度，压力和组成来实现对蚀刻速率和选择性的精确控制。此外，还有其他优点：溶液中悬浮颗粒受到样品污染的风险减少，这显着提高了较大的纳米结构的产量。此外，由于处理液体HF酸以及与之相关的重大健康风险，因此安全性提高了。最后，用氢原子的无氧化物表面终止在硅样品上保留了几分钟，这是进一步的过程步骤所必需的（例如ALD，CVD，MBE）。总而言之，使用RF蒸气蚀刻装置（例如该提案靶向的装置）将在制造纳米结构量子系统和材料的制造方面具有显着优势。因此，相应的设备目前正面临着很高的国际需求。购买相应的机器将确保Garching校园在复杂纳米结构的生产中保持国际竞争力。