SYNTHESIS OF BONE THEN FILMS BY LASER ABLATION AND THEIR APPLICATIONS TO IMPLANT MATERIALS

激光烧蚀合成骨膜及其在植入材料中的应用

基本信息

  • 批准号:
    07680960
  • 负责人:
  • 金额:
    $ 1.02万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 财政年份:
    1995
  • 资助国家:
    日本
  • 起止时间:
    1995 至 1996
  • 项目状态:
    已结题

项目摘要

The ArF excimer laser deposition technique has been used to fabricate bioceramic hydroxyapatite (HAp) thin films. the target was the pressed pellet, that was the mixture of HAp (Ca/P=2.03) powder and P_2O_5 powder for the control the Ca/P ratio of HAp films. The bone and tooth were also used as target. The crystallized HAp films were fabricated using a after annealing method or in-situ growth method. In the case of former method, the films were deposited in vacuum in pure oxygen gas (pressure 0.4 mTorr) at substrate temperature 100゚C.The films were annealed for 1-10 hr at 300-550゚C under the oxygen+water vapor flow. The HAp films have been grown on various inorganic or organic substrates, such as Ti, Al_2O_3/Si (100) and SrTiO_3 (100) inorganic materials, and polymides (PI) and polytetrafluoroethylene (PTFE) organic materials. The mechanical properties of HAp films were examined using a dynamic ultra-micro hardness tester and an Instron testing machine. The dynamic hardness was obtained to be 390 for HAp film on Ti substrate. Also, the tensile bond strengths of HAp film on PI and PTFE were 9.8MPa and 0.4MPa, respectively. and that of HAp film on Ti was more than 54MPa. In the case of latter method, the HAp films were deposited in vacuum in pure oxygen+water vapors (pressure 100mTorr) at temperature 450-550゚C.The formation of c-axis oriented HAp films has been accomplished on sapphire (0001) substrate The biocompatibility of HAp films were also studied by in-vitro experiments. In this experiment, 3T3-E1 cells were used for osteoblastic cells attachment models. As a results, the cells were attached and proliferated on the Ti substrate. This result indicate that the HAp films with laser ablation were useful for the biocompatible coating material of implant.
ARF准分子激光沉积技术Hyed to faoceramic羟基磷灰石(HAP)薄膜是HAP(CA/P = 2.03)粉末和P_2O_5粉末的混合物。使用退火方法或原位方法制造结晶的HAP膜,在以前的方法中,膜在纯氧气(压力0.4 mtorr)的底物温度下沉积在100°的纯氧气中。在300-550 ms的1-10小时上已在各种无机或有机底物上生长,例如Ti,Al_2o_3/si(100)和Srtio_3(100)和Polymides(PI)和Polytetrafluoroethere(PI)使用动态的超微型硬度测试仪检查膜,并在HAP膜上的HAP粘结强度(在Ti上的HAP胶片上)获得了390后一种方法,在温度下,在450-550的纯氧+水蒸气中,HAP膜沉积在真空中,以C轴为导向的HAP膜的变化已在Sapphire(0001)基板上通过HAP膜的生物相容性在HAP膜的生物相容性上完成体内实验。

项目成果

期刊论文数量(6)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Shigeki Hontsu: "Pulsed Laser Deposition of Bioceramic Hydroxyapatite Thin Films on Polymer Materials" Japanese Journal Applied Physics. Vol.35. 1208-1210 (1996)
Shigeki Hontsu:“生物陶瓷羟基磷灰石薄膜在聚合物材料上的脉冲激光沉积”日本应用物理学杂志。
  • DOI:
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    0
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Shigeki Hontsu: "Pulsed Laser Deposition of Bioceramic Hydroxyapatite Thin Films on Polymer Materials" Jpn.J.Appl.Phys.Vol.35. L1208-L1210 (1996)
Shigeki Hontsu:“生物陶瓷羟基磷灰石薄膜在聚合物材料上的脉冲激光沉积”Jpn.J.Appl.Phys.Vol.35。
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    0
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Shigeki Hontsu: "Electrical Properties of hydroxyapatite thin films grown by pulsed laser deposition" Thin Solid Films. (不明). (1997)
Shigeki Hontsu:“脉冲激光沉积生长的羟基磷灰石薄膜的电特性”薄固体薄膜(未知)。
  • DOI:
  • 发表时间:
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  • 影响因子:
    0
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Shigeki Hontsu: "Electrical properties of hydroxyapatite thin films grown by pulsed laser deposition" Thin Solid Films. 4 (1997)
Shigeki Hontsu:“脉冲激光沉积生长的羟基磷灰石薄膜的电特性”固体薄膜。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Shigeki Hontsu: "Electrical properties of hydroxyapatite thin films grown by pulsed laser deposition" Thin Solid Films. (掲載決定)不明. (1997)
Shigeki Hontsu:“通过脉冲激光沉积生长的羟基磷灰石薄膜的电特性”薄固体薄膜(出版决定)未知(1997)。
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    0
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HONTSU Shigeki其他文献

HONTSU Shigeki的其他文献

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{{ truncateString('HONTSU Shigeki', 18)}}的其他基金

Development of functional apatite sheet for hyperesthesia treatment
开发用于治疗感觉过敏的功能性磷灰石片
  • 批准号:
    25463063
  • 财政年份:
    2013
  • 资助金额:
    $ 1.02万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Implant treatment in next generation by preparation technology of nano apatite thin film
纳米磷灰石薄膜制备技术的下一代植入治疗
  • 批准号:
    20390503
  • 财政年份:
    2008
  • 资助金额:
    $ 1.02万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Preparation of the superconducting magnetostatic wave device by the heterostructure of the oxide superconductor/ferromagnet.
氧化物超导/铁磁体异质结构制备超导静磁波器件
  • 批准号:
    14550017
  • 财政年份:
    2002
  • 资助金额:
    $ 1.02万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Fabrication of All-Oxide Ferroelectric/High-Temperature Superconductor/Ferromagnetic Heterostructures for Electorically and Magnetically Tunable Microwava Devices
用于电磁可调微波器件的全氧化物铁电/高温超导/铁磁异质结构的制造
  • 批准号:
    12650685
  • 财政年份:
    2000
  • 资助金额:
    $ 1.02万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
DEVELOPMENT OF ORGANIC/INORGANIC BIOACTIVE COMPOSITE MATERIALS WITH BIOCOMPATIBILITY AND FLEXIBILITY
具有生物相容性和灵活性的有机/无机生物活性复合材料的开发
  • 批准号:
    10650681
  • 财政年份:
    1998
  • 资助金额:
    $ 1.02万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)

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