Development of Photo-conductive Device with Electric Field Modulation Type using New Material of Layr Semiconductor

利用Layr半导体新材料开发电场调制型光电导器件

基本信息

批准号：
07555114
负责人：
OHYAMA Masanori
金额：
$ 3.58万
依托单位：
Tokyo National College of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555114/
关键词：
compound semiconductor layr type structure photo conduction material electron beam deposition RF sputtering photo sensor modulated photo device 光センサー

项目摘要

The photoconductor device using new material laminar type compound semiconductor has been researched for fundamental development. The photoconductor device using new material for optical application to dynamic system is expected to be in the development of optelectronics. In this research and project, the new materials suitable for the photoconductor is GaS and GaSe of III-VI compound semiconductor. Fundamental properties of GaS and GaSe thin films prepared by RF spattering have been investigated first. These films have been deposited onto fused silica and glass substrates. It is found that crystalline GaSe films with good crystallinity with the appropriate sputtering conditiion at 500ﾟC of substrate temperature and crystalline GaS films with substrate temperature at 500ﾟC of reactive sputtering a mixture of Ar and H_2 as the sputtering gas. Furthermore, we have investigate of fundamental properties of GaS and GaSe thin films, prepared by electron beam deposition for those films, the crystalline GaSe films good layr type are obtained by electron beam deposition with substrate temperature at 300ﾟC.those the growth processes technigues of semiconductors are will lead to new technology in opt electronics.In specially, we obtain the photoconductivity sigma_p for the GaS thin films of the impurity doping prepared by electron beam Co-deposition (Tb_2Cl_3, Sn 1wt%) with substrate temperature at 300ﾟC.It should be noted here in experiment that the radio photoconductivity sigma_p/dark conductivity sigma_d takes about 10^3 around room temperature, because this value is expected for the possibility of photoconductor preparations in the practical application.

已经研究了使用新材料层型复合半导体的光电导器设备以进行基本发展。使用新材料用于动态系统的新材料的光电导体设备有望在光学元件的开发中。在这项研究和项目中，适合光电导体的新材料是IIII-VI复合半导体的气体和GASE。首先研究了由RF间隔制备的气体和GASE薄膜的基本特性。这些薄膜已沉积在融合的二氧化硅和玻璃基板上。发现具有良好结晶度的结晶膜，在500 c的基板温度的500 c和晶体气体膜下，在500 c的底物温度下，在500 c c的反应性溅射AR和H_2作为溅射气体的混合物。此外，我们已经研究了通过电子束沉积为这些膜制备的气体和GASE薄膜的基本特性，晶体GASE膜良好的Layr类型是通过Electron Beam沉积在300°C下的底物温度获得的。那些半导体的这些增长过程将导致OPT电子设备中的新技术。在特殊情况下，我们获得了通过电子束共注释（TB_2CL_3，SN 1WT％，SN 1WT％）的杂质掺杂的气体薄膜的光电导率SIGMA_P，该杂质掺杂型在300ﾟC.IIT中应在300 phote pontectim pothite pothite pothite in Booth Potteriment in Boothiment sep in terimiment sep pothite pothite pothite pothite。 Sigma_d在室温周围大约需要10^3，因为在实际应用中需要光电导体制备的可能性期望。