Low-temperature heteroepitaxy of compound semiconductors on silicon substrate

硅衬底上化合物半导体的低温异质外延

基本信息

批准号：
12555190
负责人：
OHYAMA Masanori
金额：
$ 7.17万
依托单位：
Tokyo National College of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12555190/
关键词：
low temperature crystal growth layered compound semiconductor RF sputtering electron beam deposition Fan der Waals epitaxy optical property electronic phenomena silicon substrate ヘテロエピタキシーファンデルワールス結合テルル化ガリウムセレン化ガリウム硫化カリウム化合物

项目摘要

In this research, we have developed the process technology of the thin film crystal-growth perpendicular to c-axis on the silicon substrate using the layered compound semiconductors and investigated electronic phenomena. The epitaxial research of semiconductor films is usual based on considering the crystalline coordination between evaporation material and substrate material, but the crystal-growth technology based on the glass substrate is need for optical and electronic device applications. The crystalline thin films of III-VI family compound semiconductor have an optical-band-gap in visible-light region are successfully grown on the silicon substrate and fused silica substrate. And we also discussed about the low-temperature crystal-growth mechanism and the process condition of van der waals epitaxy for the layered compound semiconductors. These results are as follows :1) The low-temperature crystal-growth process have been proposed for the layered compound semiconductors (GaSe, GaS … More ) on the silicon substrate, and the base technologies of our process are developed using the conventional semiconductor process of the electron beam deposition method and RF-sputtering method.2) It is established that the GaSe thin film on the silicon substrate perpendicular c-axis is obtained by electron beam deposition method. The GaSe film as the substrate temperature is 500℃ have an optical energy gap of 2.0eV, and these samples are indicated highly sensitive to the photo conductive property.3) From the proposed film-growth process using the exciting film-surface charge method we are obtained a good knowledge for the crystal growth mechanism of the grapho-epitaxy on the silicon substrate.4) From the electron (energy) shower-assist process, the crystalline GaS films along c-axis are obtained at substrate temperature lower than 300℃ based on the silicon substrate.Finally, these proposed processes based on the conventional process of the electron beam deposition method are enabling technology to deposit on the large substrate area, and it is established that the GaSe and GaS crystalline films are applicable to the photo sensor device and the intelligent device. Less

在这项研究中，我们开发了使用分层化合物半导体的薄膜地壳生长垂直于硅底物的专业技术，并研究了半导体膜的外延研究。材料设备的应用。半导体。 2）确定了通过电子beavous方法获得的底物垂直C轴上的膜，因为膜温度为500°C，其光能差距为2.0ev，并且这些样品被高度指示3）使用激动人心的膜表面电荷的支撑膜生长工艺，我们获得了硅底物上图形上型的crot型生长机理的goowledge.4））淋浴辅助过程，沿C轴的结晶气膜在低于硅底物的底物温度下获得。在本文中，这些基于电子束沉积方法的传统过程的支撑过程使技术可以沉积在已建立的Thase Thase Gas上有些是有些是传感器设备和智能设备的薄膜

项目成果

期刊论文数量（62）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

小林勇介, 角倉大輔, 鈴木敬匡, タンコッスーン, 伊藤浩, 大山昌憲, 藤田安彦: "スパッタリング法で作成されたGaSe薄膜の暗電気伝導度測定"応用物理学会学術講演会講演予稿集. 49. 593 (2002)

Yusuke Kobayashi、Daisuke Kadokura、Takamasa Suzuki、Tankosoon、Hiroshi Ito、Masanori Oyama、Yasuhiko Fujita：“溅射法制备的 GaSe 薄膜的暗电导率测量”日本应用物理学会学术会议论文集 49. 593。 (2002)