Low-temperature heteroepitaxy of compound semiconductors on silicon substrate

硅衬底上化合物半导体的低温异质外延

• 批准号: 12555190
• 负责人: OHYAMA Masanori
• 金额: $ 7.17万
• 依托单位: Tokyo National College of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12555190/
• 关键词: low temperature crystal growth; layered compound semiconductor; RF sputtering; electron beam deposition; Fan der Waals epitaxy; optical property; electronic phenomena; silicon substrate; ヘテロエピタキシー; ファンデルワールス結合; テルル化ガリウム; セレン化ガリウム; 硫化カリウム; 化合物; low temperature crystal growth; layered compound semiconductor; RF sputtering; electron beam deposition; Fan der Waals epitaxy; optical property; electronic phenomena; silicon substrate; ヘテロエピタキシー; ファンデルワールス結合; テルル化ガリウム; セレン化ガリウム; 硫化カリウム; 化合物

In this research, we have developed the process technology of the thin film crystal-growth perpendicular to c-axis on the silicon substrate using the layered compound semiconductors and investigated electronic phenomena. The epitaxial research of semiconductor films is usual based on considering the crystalline coordination between evaporation material and substrate material, but the crystal-growth technology based on the glass substrate is need for optical and electronic device applications. The crystalline thin films of III-VI family compound semiconductor have an optical-band-gap in visible-light region are successfully grown on the silicon substrate and fused silica substrate. And we also discussed about the low-temperature crystal-growth mechanism and the process condition of van der waals epitaxy for the layered compound semiconductors. These results are as follows :1) The low-temperature crystal-growth process have been proposed for the layered compound semiconductors (GaSe, GaS … More ) on the silicon substrate, and the base technologies of our process are developed using the conventional semiconductor process of the electron beam deposition method and RF-sputtering method.2) It is established that the GaSe thin film on the silicon substrate perpendicular c-axis is obtained by electron beam deposition method. The GaSe film as the substrate temperature is 500℃ have an optical energy gap of 2.0eV, and these samples are indicated highly sensitive to the photo conductive property.3) From the proposed film-growth process using the exciting film-surface charge method we are obtained a good knowledge for the crystal growth mechanism of the grapho-epitaxy on the silicon substrate.4) From the electron (energy) shower-assist process, the crystalline GaS films along c-axis are obtained at substrate temperature lower than 300℃ based on the silicon substrate.Finally, these proposed processes based on the conventional process of the electron beam deposition method are enabling technology to deposit on the large substrate area, and it is established that the GaSe and GaS crystalline films are applicable to the photo sensor device and the intelligent device. Less

在这项研究中，我们使用层状化合物半导体并研究了电子现象的薄膜晶体晶体增长的晶体晶体增长的工艺技术。半导体膜的外延研究通常是基于考虑经济材料和底物材料之间的结晶协调性，但是对于光学和电子设备应用，需要基于玻璃基板的晶体增长技术。 IIII-VI家族化合物半导体的结晶薄膜在可见光区域具有光带间隙，在硅底物和熔融二氧化硅底物上成功生长。我们还讨论了层状化合物半导体的低温晶体生长机理和范德华外延的过程条件。这些结果如下：1）在硅底物上为分层化合物半导体（GASE，GAS，更多）提出了低温晶体增长过程，我们过程的基础技术是使用传统的半导体方法使用电子束沉积方法和RF-Syputters的常规半导体工艺进行的。 C轴通过电子束沉积法获得。 GASE膜作为底物温度为500℃的光能差距为2.0ev，这些样品对照片导电性能高度敏感。3）使用令人兴奋的膜表面电荷方法，我们从拟议的膜增长过程中获得了良好的知识，可以很好地了解硅化胶的晶体 - 从硅酸盐层造成的硅化层（硅酸盐）silicans sielstrate sielstrate sielstrate sistron.4）沿C轴根据硅底物在基板温度低于300℃的基板温度下获得。从最后，这些基于电子束沉积方法的常规过程的提出的过程使技术能够沉积在大型基质面积上，并且确定了GASE和气体晶体膜适用于照片传感器设备和智能设备和智能设备。较少的