Synthesis and Photo-chemical Properites of Semiconductors Incorporated in the Interlayer

中间层半导体的合成和光化学性能

基本信息

批准号：
08455403
负责人：
SATO Tsugio
金额：
$ 4.93万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455403/
关键词：
Layered compound Intercalation Incorporated semiconductor Nanocomposite Photocatalyst Photo-chemical energy conversion Photoclevage of water Electron transfer H_4Nb_6O_<17>H_2Ti_4O_9 TiO_2 Pt 水の完光分解 CdS Fe_2O_3

项目摘要

Layered compound/semiconductor nonocomposites incorporating semiconductor nanoparticles in the interlayer of layered compounds were fabricated and their photo-chemical properties were investigate. Semiconductors such as CdS, Fe_2O_3. CuO, NiO, MnO, TiO_2, etc. were successively intercalated in various layered compounds such as H_2Ti_4O_9, H_4Nb_6O_<17>, HCaNb_3O_<10>, HNbWO_6, HTaWO_6, etc. The thickness of semiconductor particles incorporated was less than 1 nm and the band gap energy was slightly larger than that of normal unsupported semiconductor crystals. Nonocomposites incorporating small band gap semiconductor such as CdS, Fe_2O_3, CuO, NiO and MnO showed efficient hydrogen evolution activity under visible light irradiation (wave length>400 am). On the other hand, nanocomposites incorporating TiO_2 and/or TiO_2 and Pt were capable to clevage water into hydrogen and oxygen without sacrificial hole acceptor by band gap irradiation. The excellent photocatalytic activity of semiconductor particles incorporated wad attributed to the charge separation by guest to host electron transfer. By analyzing the fluorescence life times of CdS and TiO_2 incorporated in H_2T_<14>O_9 and H4Nb_6O_<17>, it was confirmed that photoinduced electron in CdS and/or TiO_2 in the interlayer quickly transfer to the host layers. The electron transfer rate constant from CdS to H2Ti4O9 and/or H_4Nb_6O_<17> were determined as ca. 10^6 sec-1 and those from TiO_2 to H_2T_<14>O_9 and H_4Nb_6O_<17> were l08 sec^<-1>.

制造了分层的化合物/半导体非复合材料，这些非复合材料掺入了分层化合物中层中的半导体纳米颗粒，并研究了它们的光化特性。半导体，例如CD，FE_2O_3。 CuO，Nio，Mno，TiO_2等在各种分层化合物中连续插入，例如H_2TI_4O_9，H_4NB_6O_ <17>，HCANB_3O__ <10>，HNBWO_6，HNBWO_6，HTAWO_6，HTAWO_6，HTAWO_6等。带隙能量略大于正常无支撑的半导体晶体的能量。在可见光光照射下（波长> 400 AM），融合了小带隙半导体（例如CD，FE_2O_3，CUO，NIO和MNO）的非复合材料。另一方面，结合TiO_2和/或TIO_2和PT的纳米复合材料能够通过带隙辐照的无牺牲孔受体将水裂解成氢和氧气。半导体颗粒的出色光催化活性融合了归因于客人的电荷分离以宿主电子传递。通过分析H_2T_ <14> O_9和H4NB_6O__ <17>中CDS和TIO_2的荧光寿命时间，可以证实，可以证实，在cds中示意电子诱导的电子和/或tio_2在中间层中迅速转移到宿主层中。电子传输速率从CD到H2TI4O9和/或H_4NB_6O__ <17>确定为CA。 10^6 sec-1以及从tio_2到h_2t_ <14> O_9和H_4NB_6O_ <17>的sec_2 sec^<-1>。