"Development of Scanning Laser Micro-polariscope and its Applications for Stress Evaluation"
《扫描激光微偏光镜的研制及其在应力评估中的应用》
基本信息
- 批准号:07555034
- 负责人:
- 金额:$ 3.01万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:1995
- 资助国家:日本
- 起止时间:1995 至 1996
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
We have developed an optical equipment that possesses high detection sensitivity for measuring the small optical retardation induced by small stress by means of laser photoelasticity. A He-Ne laser is used as a light source to measure small stress in transparent materials. We worked on the theory and process of the measurement of optical retardation in the materials. The magnitudes of principal stress difference and the directions of the principal stress are obtained simultaneously and quantitatively using our equipment. To evaluate the validity of the measurement results of the equiment, the stress distribution of a pulled rectangular glass plate with notches at both sides is measured using the equipment. The experimental results of stress distribution agree well with the analytical results of FEM.The stress distribution can be determined quickly by using the equipment and scanning stress distribution measurement has been realized. The features of the developed optical equipment and future applications are as follows,(1)This optical equipment has high resolution power of measurement less than 1 nm retardation and this technology can be applicable to the static and dynamic force evaluations in bio-membrane, bio-cell and several kinds of thin layrs,(2)This method can achieve the spatial-resolution of about 12 micrometer and has possibility of higher spatial-resolution up to 1 micrometer with the lens system like a microscope.
我们已经开发了一种光学设备,该光学设备具有高检测灵敏度,用于测量通过激光光弹引起的小压力引起的小光智能。 He-Ne激光用作测量透明材料中小应力的光源。我们研究了材料中光智障的测量理论和过程。使用我们的设备同时且定量地获得主应力差异的幅度和主应力的方向。为了评估公寓测量结果的有效性,使用设备测量了拉矩形玻璃板的应力分布。应力分布的实验结果与FEM的分析结果非常吻合。可以通过设备快速确定应力分布,并且已经实现了扫描应力分布测量。开发的光学设备和未来应用的特征如下,(1)该光学设备具有高分辨率的高分辨率小于1 nm的延迟,并且该技术可适用于在生物膜,生物细胞,生物细胞中的静态和动态力量评估,并且在较高的薄级别上,(2)该方法可以实现较高的较高的光度,(2)(2)较高的跨度,(2)在1个微米的情况下,(2)可实现12微米。镜头系统像显微镜一样。
项目成果
期刊论文数量(10)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Y. NIITSU: "“Scanning Stress Measurement Method by Laser Photoelasticity"" JSME Int. Journal Series-A. 38-4. 500-505 (1995)
Y. NIITSU:“激光光弹性扫描应力测量方法”,JSME Int. Series-A 500-505。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
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- 通讯作者:
K.Gomi, Y.Niitsu: "Effect of Crystalline Orientation on Photoelastic Property of Si Single Crystal (in Japanese)" Trans.of JSME,Series-A. Vol.62, No.604. 2651-2656 (1996)
K.Gomi、Y.Niitsu:“晶体取向对硅单晶光弹性性能的影响(日文)”Trans.of JSME,Series-A。
- DOI:
- 发表时间:
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- 影响因子:0
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新津・五味・一瀬: "走査型レーザ光弾性法の開発" 日本機械学会論文集. 62-600,A. 123-128 (1996)
Niitsu、Gomi 和 Ichinose:“扫描激光光弹性方法的发展”,日本机械工程师学会会刊 62-600,A 123-128 (1996)。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
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Kenji GOMI and Yasushi Niitsu: "Photoelastic Property of Gallium Arsenide Crystal" Proc.of ASME Int.,Intersociety Electronic & Photonic Packaging Conference. (印刷中). (1997)
Kenji GOMI 和 Yasushi Niitsu:“砷化镓晶体的光弹性”Proc.,ASME 国际电子与光子封装会议(1997 年)。
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- 发表时间:
- 期刊:
- 影响因子:0
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- 通讯作者:
Y.Niitsu, K.Gomi, T.Ono: "Investigation of Photoelastic Property of Semiconductor Wafers" Proc.of Appl.Exp.Mech.Elec.Pack.ASME. AMD-Vol.214. 103-108 (1995)
Y.Niitsu、K.Gomi、T.Ono:“半导体晶圆光弹性特性的研究”Proc.of Appl.Exp.Mech.Elec.Pack.ASME。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
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NIITSU Yasushi的其他基金
Monitoring of Bridge Displacement with Image Correlation Method
图像相关法监测桥梁位移
- 批准号:2356057823560578
- 财政年份:2011
- 资助金额:$ 3.01万$ 3.01万
- 项目类别:Grant-in-Aid for Scientific Research (C)Grant-in-Aid for Scientific Research (C)
Development of 3D Solid Modeler and its Contents for Education of Mathematics
数学教育3D实体建模器及其内容的开发
- 批准号:1550063715500637
- 财政年份:2003
- 资助金额:$ 3.01万$ 3.01万
- 项目类别:Grant-in-Aid for Scientific Research (C)Grant-in-Aid for Scientific Research (C)
"Stress Evaluation of Silicon Single Crystal by Laser Raman Spectroscopy"
《利用激光拉曼光谱评估硅单晶的应力》
- 批准号:1065009810650098
- 财政年份:1998
- 资助金额:$ 3.01万$ 3.01万
- 项目类别:Grant-in-Aid for Scientific Research (C)Grant-in-Aid for Scientific Research (C)
Development of Stress Measurement of Silicon Single Crystal by Infrared Polarized Laser
红外偏振激光硅单晶应力测量的研究进展
- 批准号:0555503505555035
- 财政年份:1993
- 资助金额:$ 3.01万$ 3.01万
- 项目类别:Grant-in-Aid for Developmental Scientific Research (B)Grant-in-Aid for Developmental Scientific Research (B)
"Evaluation of Three-Dimensional Residual Stress in Bonding Layr with Polarized Laser"
“用偏振激光评估键合层的三维残余应力”
- 批准号:0580501005805010
- 财政年份:1993
- 资助金额:$ 3.01万$ 3.01万
- 项目类别:Grant-in-Aid for General Scientific Research (C)Grant-in-Aid for General Scientific Research (C)
相似海外基金
赤外線レーザ光弾性法による半導体用単結晶の光弾性物性の測定
红外激光光弹性法测量半导体单晶的光弹性特性
- 批准号:0875012108750121
- 财政年份:1996
- 资助金额:$ 3.01万$ 3.01万
- 项目类别:Grant-in-Aid for Encouragement of Young Scientists (A)Grant-in-Aid for Encouragement of Young Scientists (A)
Development of Stress Measurement of Silicon Single Crystal by Infrared Polarized Laser
红外偏振激光硅单晶应力测量的研究进展
- 批准号:0555503505555035
- 财政年份:1993
- 资助金额:$ 3.01万$ 3.01万
- 项目类别:Grant-in-Aid for Developmental Scientific Research (B)Grant-in-Aid for Developmental Scientific Research (B)