"Stress Evaluation of Silicon Single Crystal by Laser Raman Spectroscopy"

《利用激光拉曼光谱评估硅单晶的应力》

• 批准号: 10650098
• 负责人: NIITSU Yasushi
• 金额: $ 1.92万
• 依托单位: TOKYO DENKI UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650098/
• 关键词: Raman Spectrum; Stress Measurement; Silicon Single Crystal; Polarimetry of Raman Spectrum; 応力; シリコン; ラマンシフト

The measurements using Raman spectroscopy have been used practically for the evaluation of materials, for example, the bonding structures and the electrical properties. Recently, accoding to the advance of the resolution power of Raman spectrum measurement, this method is applied to measure the microscopical stress in the materials. However, the relations between the shift of Raman spectrum and stress state are not obtained. This study is for the stress evaluation method by laser Raman spectrum. Following results are obtained ;1. The optical phonon frequencies are formulated from the dynamic equation of atoms in the silicon crystal. The relations between the shift of Raman spectrum and stress states are both theoretically and experimentally obtained.2. The shift of Raman spectrum depends only on the addition of normal stresses (σィイD2xxィエD2+σィイD2yyィエD2 ) for the back-scattering optical configuration for {100} surface, and it is impossible to determine the shear stress in the {100} surfase.3. The shift of Raman spectrum of {110} surfase depends on the stress magnitude as well as stress direction.4. Two optical phonon frequencies can be obtained by different polarity configurations of incident and scattered light for {110} surfase.

使用rave的测量是材料的评估，粘合结构toec试验性能是根据材料中拉曼测量的副本的分辨率频谱。1。正常应力）σIID2YY II D2）用于{100}表面的背部光学配置，并且不可能确定{100} SE.3的剪切应力。表面量取决于应力幅度和应力方向。4。

项目成果

五味健二、新津靖: "赤外線レーザ光弾性法によるGaAsウエハの残留応力評価"日本機械学会論文集. Vol.65,No.638A. 2143-2148 (1999)

Kenji Gomi、Yasushi Niitsu：“通过红外激光光弹性法评估 GaAs 晶片的残余应力”，日本机械工程师学会会刊，第 65 卷，第 638A 号（1999 年）。

池辺朋、新津靖、鈴木栄一、池田照雑、大久保優晴: "レーザーラマン分光法によるシリコン単結晶の応力評価"日本機械学会論文集. 65-638A. 2157-2162 (1999)

Tomo Ikebe、Yasushi Niitsu、Eiichi Suzuki、Teruzatsu Ikeda、Yoshiharu Okubo：“通过激光拉曼光谱对硅单晶进行应力评估”日本机械工程师学会会刊 65-638A (1999)。

Yasushi Niitsu, Tomo Ikebe, Yusei Ohkubo and Teruki Ikeda: ""Stress Evaluation of (100) Si Wafer by Raman Spectroscopy""ASME-EEP. 26-1. 859-866 (1999)

Yasushi Niitsu、Tomo Ikebe、Yusei Ohkubo 和 Teruki Ikeda：“通过拉曼光谱法对 (100) Si 晶圆进行应力评估”ASME-EEP。

Tomo Ikebe, Yasushi Niitsu, Yusei Ohkubo and Teruki Ikeda: ""Stress Evaluation of Si Single Crystal by Raman Spectroscopy""Trans. of JSME. 65, No.638A. 2157-2162 (1999)

Tomo Ikebe、Yasushi Niitsu、Yusei Ohkubo 和 Teruki Ikeda：“通过拉曼光谱法评估硅单晶的应力”Trans。

鈴木、新津、池辺、池田、大久保: "レーザラマン分光法によるSi単結晶の応力評価" 日本機械学会講演論文集. 98-2-2. 32-33 (1998)

Suzuki、Niitsu、Ikebe、Ikeda、Okubo：“通过激光拉曼光谱法评估硅单晶”，日本机械工程师学会会议记录 98-2-33 (1998)。