Development of galvanomagnetic and magneto-optical devices with III-V-based diluted magnetic semiconductors

使用 III-V 族稀磁半导体开发电磁和磁光器件

基本信息

批准号：
07555004
负责人：
MUNEKATA Hiroo
金额：
$ 9.54万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

项目摘要

The research has been carried out with the aim to develop knowledge for the preparation and design of magnetic-semiconductor hybrid super-structures composed of semiconductors materials (silicon, III-V,and II-VI compounds) and various magnetic materials, and to pursue new physical effects based on the interactions between carrier spins and magnetic ions. Results obtained under this project are summarized as follows :1) Have characterized a series of (In, Mn) As-based diluted magnetic semiconductor heterostructures, and found a strong dependencies of carrier (hole) concentrations and heterostructure parameters on magnetic properties.2) Have found light-induced ferromagnetism in (In, Mn 9 As/GaSb heterostructures. Have concluded that the phenomenon is based on excess carriers generated by the light irradiation.3) Have initiated the fabrication of field-effect devices with the (In, Mn) As-based heterostructures.4) Have re-analyzed EXAFS data, and determined the local Mn structures (MnAs_4) in homogeneous (In, Mn) As.5) Have studied magneto-Kerr effect in (In, Mn) As/ (Al, Ga) Sb heterostructures, and elucidate the relation between band structures and optical response.6) Have investigated electrical behavior of (In, Mn) As : MnAs thin films, and found that the ferromagnetic MnAs clusters can strongly modify carrier transport in the (In, Mn) As layrs.7) Have prepared and characterized ZnSe/Fe multi-layred structures, a new wide-gap based hybrid super structures, and found new features in magneto-optical spectra which are not due to constituent materials.8) Have considered concepts of novel magneto-optical and information storage devices.

该研究的目的是开发由半导体材料（硅、III-V和II-VI化合物）和各种磁性材料组成的磁半导体混合超结构的制备和设计知识，并追求基于载流子自旋和磁性离子之间相互作用的新物理效应。该项目取得的成果总结如下：1）表征了一系列（In，Mn）As基稀磁半导体异质结构，并发现载流子（空穴）浓度和异质结构参数对磁性能的强烈依赖性。2）在 (In, Mn 9 As/GaSb 异质结构中发现了光致铁磁性。得出结论，该现象是基于光照射产生的过量载流子。3) 开始用 (In, Mn 9 As/GaSb 异质结构制造场效应器件） As基异质结构。4)重新分析了EXAFS数据，确定了均质(In,Mn)As中的局域Mn结构(MnAs_4)。5)研究了(In,Mn)As/(Al)中的磁克尔效应, Ga) Sb 异质结构，并阐明能带结构与光学响应之间的关系。 6) 研究了 (In, Mn) As : MnAs 薄膜的电学行为，发现铁磁MnAs团簇可以强烈改变（In，Mn）As层中的载流子输运。7）制备并表征了ZnSe/Fe多层结构，一种基于宽禁带的新型混合超结构，并发现了磁光光谱的新特征这不是由于构成材料造成的。8) 考虑了新型磁光和信息存储设备的概念。