Photo-enhanced magnetization in semiconductors thin films incorporating magnetic dots

包含磁点的半导体薄膜中的光增强磁化

基本信息

批准号：
12450007
负责人：
MUNEKATA Hiroo
金额：
$ 9.22万
依托单位：
TOKYO INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2003
项目状态：
已结题

项目摘要

Enhancement of magnetization by the light illumination at room temperature (RT) has been reported in the year 2000 for semiconductor-magnetic composite films prepared by the alternative deposition of Fe and GaAs on GaAs(001) substrates at high substrate temperature of 580 "C. While this was a very encouraging achievement for the future applications such as the wireless micro-electronic mechanical system, the origin of the photo-enhanced magnetization (PEM) has remained unclear. It was partly because of the fact that those samples consisted of polycrystalline, granular structures whose constituent ingredients were not well engineered nor controlled. This research was initiated with the aim to identify the key materials and elucidate the mechanism of PEM.Systematic studies of samples prepared by the alternative deposition of Fe_3Ga_<2-x>As_x and GaAs were carried out with various deposition sequences and different substrate temperatures T_<s-> GaN-based composite structures were also inv … More estigated. It was found that the samples prepared by molecular beam deposition with the stacking the unit of [100-nm GaAs/50-nm Fe_3Ga_<2-x>As_x/100-nm GaAs] at T_s = 600℃ exhibit significant PEM effect. Metallurgical evaluation by nano-electron probe analysis has revealed that metamagnetic metal Fe_3Ga_4 is responsible for the observed PEM. It was discussed that this compound was formed as a consequence of the interlayer diffusion process between GaAs and Fe_3Ga_<2-x>As. The hypothesis of the inter-particle interaction model, which was introduced at the initial stage of the study in 2000. was found not to be the principle mechanism for the observed PEM effect.Systematic studies on power dependence of PEM suggest that the increase of magnetization is primarily dominated by the light-induced heating, whereas pure photonic excitation may also contribute the PEM, as manifested itself by the fact that the magnitude of PEM exceeds beyond the maximum value that can be expected from simple heating. This novel effect should be pursued in the future work. Less

在2000年已经报道了通过室温（RT）在室温下通过光照射增强磁化强度的增强，该半导体 - 磁性复合膜是通过Fe和GAAS在GAA和GAAS上的替代沉积在GAA（001）底物上制备的580“ C中的Fe和GAAS（001）底物上的替代沉积，这是对未来的无线词的非常令人鼓舞的原理，例如，这是一个非常令人鼓舞的应用程序。磁化（PEM）仍然不清楚，部分原因是这些样品由多晶的颗粒结构组成，其一致性的一致性无法很好地设计，也无法控制该研究，目的是识别PEM.Systal and the Samplood and of fe _3ga的机制。序列和不同的底物温度T_ <s->基于GAN的复合结构也被提高了……更加确定。发现通过分子束沉积制备的样品在t_s = 600℃上堆叠[100-nm gaas/50-nm fe_3ga_ <2-x> as_x/100-nm gaas]的单位表现出显着的PEM效应。通过纳米电子探针分析进行的冶金评估表明，元磁金属Fe_3ga_4负责观察到的PEM。讨论的是，该化合物是由于GAA和Fe_3ga_ <2-x> as之间的层间差异过程形成的。在2000年研究的初始阶段引入了颗粒间相互作用模型的假说。发现并不是观察到的PEM效应的主要机制。系统性研究PEM的功率依赖性的磁化强度的增加表明，磁化的增加主要由光诱导的暖气构成，而纯粹的光兴奋性也可能超过PEM，而Pem则在PEM上占据了PRE的贡献，而Pem则是PEM的贡献。这可以从简单的加热中预期。这种新颖的效果应在未来的工作中追求。较少的