Development of reactively controlled super-sonic nozzle beam epitaxial growth technique

反应控制超音速喷嘴束外延生长技术的发展

基本信息

批准号：
07505013
负责人：
AOYAGI Yoshinobu
金额：
$ 5.12万
依托单位：
The Institute of Physical and Chemical Research (RIKEN)
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

项目摘要

We developed the growth technique which is called "supersonic beam epitaxy" (SSBE). Using the technique, we in-situ observed and understood dynamic processes of GaAs growing surface in a milisecond range by means of high-speed RHEED and RD.Precise control of the growth rate to 1/10 monolayr per pulse was also achieved simply by arrangeing the pulse width. Furthermore, we succeeded in the control of surface reaction processes by using supersonic beam source. As a result, by using supersonic beam source, incorporation of carbon inpurities into the crystal during the growth was greatly suppressed and the concentration of carbon in the GaAs crystal is two-order less than that using usual one. All these indicates that the technique is useful and hopeful for the future applications.Wide band-gap GaN and related III-V nitride materials have shown a strong potential for use in optical devices, especially blue and ultraviolet light emitting diodes (LEDs) and laser diodes (LDs). Many efforts have been done to grow such kind of materials by various growth techniques, such as MOCVD,MBE and etc. We successfully combined two techniques namely SSBE and GSMBE together, for the fabrication of GaN quantum dot structures. We used Si as an "anti-surfactant" for the GaN dot fabrication, where methylsilane (CH_3SiH_3) was used as a Si source. Since it was reported that CH_3SiH_3 begins to decompose above 800ﾟC,it is difficult to use it because usually GSMBE growth is carried out at a relatively low temperature. But by using SSBE technique, this difficulty was overcome since high energy of the source beam is thought to enhance the decompositon of the CH_3SiH_3 molecules into Si atoms. As a result, GaN quantum dot structures were successfully fabricated by GSMBE.

我们开发了一种称为“超音速束外延”（SSBE）的生长技术。使用该技术，我们原地观察并理解了Milisecond范围内GAAS生长表面的动态过程，并通过排列脉冲宽度来实现对每个脉冲的生长速率至1/10单脉冲的准确控制。此外，我们通过使用超音速束源成功地控制了表面反应过程。结果，通过使用超音速束源，在生长过程中将碳含量掺入晶体中，并且在GAAS晶体中的碳浓度小于使用通常的碳晶体的浓度。所有这些都表明该技术对未来的应用是有用的，并且充满希望。范围的带隙gan和相关的III-V氮化物材料显示出在光学设备中使用的强大潜力，尤其是蓝色和紫外线发光语音（LED）和激光语音（LS）。通过MOCVD，MBE等各种生长技术，已经采取了许多努力，以种植这种材料。我们成功地将两种技术（即SSBE和GSMBE）组合在一起，以制造GAN量子点结构。我们将SI用作GAN DOT制造的“抗抗活性剂”，其中将甲基硅烷（CH_3SIH_3）用作SI源。由于据报道CH_3SIH_3开始分解800 c，因此很难使用它，因为通常在相对较低的温度下进行GSMBE生长。但是，通过使用SSBE技术，这种困难已经克服了，因为源梁的高能量被认为可以增强CH_3SIH_3分子的分解量，以使其成分。结果，GSMBE成功制造了GAN量子点结构。