DEVELOPMENT OF A HIGH-PRECISION ELECTRON DENSITY MEASUREMENT TECHNIQUE FOR MULTILAYER FILMS

多层薄膜高精度电子密度测量技术的开发

基本信息

批准号：
06555092
负责人：
HASHIZUME Hiroo
金额：
$ 4.16万
依托单位：
TOKYO INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06555092/
关键词：
X-RAY FRESNEL REFLECTION ELECTRON DENSITY PROFILE THROUGH THIN FILMS INTEFACE ROUGINESS CORRELATED ROUGHNESS STRUCTURE SURFACE STEP SURFACE PROFILE REPLICATION MAGNETIC MULTILAYER X線鏡面反射散漫散乱 SiGe人工超格子共鳴X線磁気散乱電子密度分布決定積層薄膜電子密度

项目摘要

An X-ray reflectometer with a crystal monochromator and analyzer has been designed for high-precision determination of electron of density profiles in multilayr films. Use of an asymmetric channel-cut silicon monochromator resulted in an X-ray beam intensity one order of magnetitue greater than in the conventional design. For data analysis a package of computer codes has been prepared using the scattering theory based on the distorted-wave Born approximation, which allows us to determine the interface roughness and its correlations in the in-plane and out-of-plane directions from specular and non-specular diffuse scattering data collected over a large range of scattering angle including the total-external reflection region. The system has bee applied to the determination of layr thicknesses and their variation, interface roughness in semiconductor SiGe/Si superlattices and magnetic multilayrs including Gd Co and Gd layrs, an Al/C nanolayrs. It was found that the replication of surfacestep structure on a vicinal siicon substrate strongly depends on the alloy composition of Ge in the SiGe layr. The system was proved useful in the structure characterization of magnetic multilayrs for X-ray resonant magnetic scattering experiments at synchrotron sources. It was also applied to a model-independent determination of electron density profiles in Al/C films from anomalous dispertion X-ray reflectometry data.

具有晶体单色器和分析仪的X射线反射仪已设计用于高精度测定多层膜中密度曲线的电子。使用不对称的通道切割硅单色器的使用导致X射线束强度比常规设计大于传统设计。为了进行数据分析，已经使用基于扭曲的波射近似的散射理论制备了计算机代码的包装，这使我们能够确定界面粗糙度及其在平面内和平面外方向上的相关性，并从散射角度收集到的散射角度，包括总偏外范围，包括总偏外范围，包括总散射角度。该系统已应用于Layr厚度的测定及其变化，半导体SIGE/SI/SI超晶格中的界面粗糙度以及包括GD CO和GD Layrs（Al/c nanolayrs）在内的磁性多层。已经发现，在硫磺锡基底物上的表面播放结构的复制很大程度上取决于sige layr中GE的合金组成。事实证明，该系统在同步源的X射线谐振磁散射实验的磁性多层的结构中有用。它也应用于来自异常X射线反射仪数据的Al/c膜中电子密度曲线的模型无关测定。